Filamentary preforms of Al-13wt % Si alloy reinforced with TiC-coated and pre-treated carbon fibres

Filamentary preforms of aluminium-13 wt % Si alloy reinforced with TiC-coated carbon fibres were obtained by liquid metal infiltration using K₂ZrF₆ as wetting agent. The interfacial structure was investigated using analytical electron microscopy (TEM, SEM) and the fibre strength measured following each step of processing. The reaction between the K₂ZrF₆ deposit and the molten alloy is discussed on the basis of the reaction products formed at the fibre-matrix interface, which mainly consisted of fluoride compounds (K₃AlF₆), different zirconium-rich suicides (Si₂Zr, SiZr (Al), (Al, Si)₂Zr) and crystalline -alumina. Large amounts and/or inhomogeneous distributions of the K₂ZrF₆ deposit should be avoided, because the massive precipitation of colonies of intermetallics around fibres is conducive for the formation of harmful aluminium carbides and favours brittle fracture of the composite. The utilization of TiC-coatings formed by the reactive chemical vapour deposition process gave satisfactory results, both in terms of composite elaboration and fibre protection during liquid infiltration.     

A modified expectation maximization algorithm for penalized likelihood estimation in emission tomography

The maximum likelihood (ML) expectation maximization (EM) approach in emission tomography has been very popular in medical imaging for several years. In spite of this, no satisfactory convergent modifications have been proposed for the regularized approach. Here, a modification of the EM algorithm is presented. The new method is a natural extension of the EM for maximizing likelihood with concave priors. Convergence proofs are given.     

基于GIM模型的输电线路通道隐患快速检测

为解决现有输电线路电网信息模型(grid information model, GIM)通道隐患检测方法检测效率低、优化算法存在漏检的问题,提出一种基于等线长点集化和球体包含原理的通道隐患快速检测方法。首先,采用等线长间隔采样方式将导线由空间曲线转化为离散点集,使离散点集在电力线上均匀分布以解决传统等水平间隔采样方式离散点集分布不均匀、特殊档精度较差问题;其次,在地物点到电力线离散点最近距离计算过程中引入球体包含原理对地物点隐患可能进行判断,对不存在隐患可能的地物点跳过邻近点搜索计算,实现通道隐患快速检测。实验表明,该方法在导线点集化方面,对于普通档、特殊档均能保证采样点均匀分布,在线长间隔为10 cm的情况下将最近点的定位误差始终控制在5 cm以内;在检测效率方面,在保证检测精度的前提下将隐患检测耗时优化为传统逐点检测耗时的6.9%,具有较强的实际应用价值。     

Minimizing Energy Barrier in Intermediate Connection Layer for Monolithic Tandem WPeLEDs with Wide Color Gamut

Perovskite light-emitting diodes (PeLEDs) show promising prospects in the wide color gamut display owing to their ultra-narrow full width at half maximum (FWHM). However, up to now, all perovskite white LEDs integrated by standard red, green, and blue perovskite emitters, namely, monolithic white PeLEDs (WPeLEDs), have been rarely reported, owing to facing some issues, e.g., solvent incompatibility in solution technique, ion exchange, and energy transfer between different emission centers. Herein, centered on these issues, an optimal intermediate connection layer (ICL) of Po-T2T/LiF/Ag/HAT-CN/MoO₃ is adopted to successfully develop monolithic tandem multicolor PeLEDs and WPeLEDs for the first time. The multicolor PeLEDs can achieve the best external quantum efficiency of 1.8% and the highest luminance of 4844 cd m⁻². Besides, the red/green/blue (R/G/B) monolithic tandem WPeLED shows a standard white International Commission on Illumination coordinate of (0.33, 0.33) and achieves an extremely wide color gamut reaching  National Television Standards Committee of 130%. This study is the first to realize the standard R/G/B co-electroluminescence in a monolithic perovskite device and offers a feasible strategy for developing wide-color gamut perovskite displays.     

Latch Applicator for Efficient Delivery of Dissolving Microneedles Based on Rapid Release of Elastic Strain Energy by Thumb Force (Adv. Funct. Mater. 11/2023)

Dissolving microneedle (DMN) is an attractive alternative to parenteral and enteral drug administration owing to its painless self-administration and safety due to non-generation of medical waste. For reproducible and efficient DMN administration, various DMN application methods, such as weights, springs, and electromagnetic devices, have been studied. However, these applicators have complex structures that are complicated to use and high production costs. In this study, a latch applicator that consists of only simple plastic parts and operates via thumb force without any external complex device is developed. Protrusion-shaped latches and impact distances are designed to accumulate thumb force energy through elastic deformation and to control impact velocity. The optimized latch applicator with a pressing force of 25 N and an impact velocity of 5.9 m s⁻¹ fully inserts the drug-loaded tip of the two-layered DMN into the skin. In an ovalbumin immunization test, DMN with the latch applicator shows a significantly higher IgG antibody production rate than that of intramuscular injection. The latch applicator, which provides effective DMN insertion and a competitive price compared with conventional syringes, has great potential to improve delivery of drugs, including vaccines.     

19.28% Efficiency and Stable Polymer Solar Cells Enabled by Introducing an NIR-Absorbing Guest Acceptor

Here, a near-infrared (NIR)-absorbing small-molecule acceptor (SMA) Y-SeNF with strong intermolecular interaction and crystallinity is developed by combining selenophene-fused core with naphthalene-containing end-group, and then as a custom-tailor guest acceptor is incorporated into the binary PM6:L8-BO host system. Y-SeNF shows a 65 nm red-shifted absorption compared to L8-BO. Thanks to the strong crystallinity and intermolecular interaction of Y-SeNF, the morphology of PM6:L8-BO:Y-SeNF can be precisely regulated by introducing Y-SeNF, achieving improved charge-transporting and suppressed non-radiative energy loss. Consequently, ternary polymer solar cells (PSCs) offer an impressive device efficiency of 19.28% with both high photovoltage (0.873 V) and photocurrent (27.88 mA cm⁻²), which is one of the highest efficiencies in reported single-junction PSCs. Notably, ternary PSC has excellent stability under maximum-power-point tracking for even over 200 h, which is better than its parental binary devices. The study provides a novel strategy to construct NIR-absorbing SMA for efficient and stable PSCs toward practical applications.     

Multiple Function Synchronous Optimization by PbS Quantum Dots for Highly Stable Planar Perovskite Solar Cells with Efficiency Exceeding 23%

Colloidal lead sulfide (PbS) quantum dots (QDs), which possess quantum confinement effect and processing compatibility with perovskite, are regarded as an excellent material for optimizing perovskite solar cells (PSCs). However, the existing PSCs optimized by PbS QDs are still facing the challenges of poor performance of the charge transport layers, low utilization in the near-infrared (NIR) region, and unsuitable energy level alignment, which limit the improvement of power conversion efficiency (PCE). Herein, a synchronous optimization strategy is realized via simultaneously introducing PbS QDs into SnO₂ electron transport layer and employing rare-earth-doped PbS QDs (Eu:PbS QDs) film with hydrophobic chain ligands as the NIR light-absorping layer and hole transport layer (HTL) of devices. PbS QDs effectively decrease the density of trap states by passivating defects. Eu:PbS QDs film with adjustable bandgap is employed as an absorption layer to broaden the NIR spectral absorption. The well-matched energy level between Eu:PbS QDs layer and perovskite layer implies efficient hole transfer at the interface. The successful synchronous optimization greatly elevates all photovoltaic parameters, reaching a maximum PCE of 23.27%. This PCE is the highest for PSCs utilizing PbS QDs material in recent years. The optimized PSCs retain long-term moisture and light stability.     

Recent Advances on High-Speed and Holographic Two-Photon Direct Laser Writing

Two-Photon Lithography, thanks to its very high sub-diffraction resolution, has become the lithographic technique par excellence in applications requiring small feature sizes and complex 3D pattering. Despite this, the fabrication times required for extended structures remain much longer than those of other competing techniques (UV mask lithography, nanoimprinting, etc.). Its low throughput prevents its wide adoption in industrial applications. To increase it, over the years different solutions have been proposed, although their usage is difficult to generalize and may be limited depending on the specific application. A promising strategy to further increase the throughput of Two-Photon Lithography, opening a concrete window for its adoption in industry, lies in its combination with holography approaches: in this way it is possible to generate dozens of foci from a single laser beam, thus parallelizing the fabrication of periodic structures, or to engineer the intensity distribution on the writing plane in a complex way, obtaining 3D microstructures with a single exposure. Here, the fundamental concepts behind high-speed Two-Photon Lithography and its combination with holography are discussed, and the literary production of recent years that exploits such techniques is reviewed, and contextualized according to the topic covered.     

Vacancy Manipulation Induced Optimal Carrier Concentration,Band Convergence and Low Lattice Thermal Conductivity in Nano-Crystalline SnTe Yielding Superior Thermoelectric Performance

Synergetic optimization of electrical and thermal transport properties is achieved for SnTe-based nano-crystalline materials. Gd doping is able to suppress the Sn vacancy, which is confirmed by positron annihilation measurements and corresponding theoretical calculations. Hence, the optimal hole carrier concentration is obtained, leading to the improvement of electrical transport performance and simultaneous decrease of electronic thermal conductivity. In addition, the incremental density of states effective mass m* in SnTe is realized by the promotion of the band convergence via Gd doping, which is further confirmed by the band structure calculation. Hence, the enhancement of the Seebeck coefficient is also achieved, leading to a high power factor of 2922 µW m⁻¹ K⁻² for Sn_0.96Gd_0.04Te at 900 K. Meanwhile, substantial suppression of the lattice thermal conductivity is observed in Gd-doped SnTe, which is originated from enhanced phonon scattering by multiple processes including mass and strain fluctuations due to the Gd doping, scattering of grain boundaries, nano-pores, and secondary phases induced by Gd doping. With the decreased phonon mean free path and reduced average phonon group velocity, a rather low lattice thermal conductivity is achieved. As a result, the synergetic optimization of the electric and thermal transport properties contributes to a rather high ZT value of ≈1.5 at 900 K, leading to the superior thermoelectric performance of SnTe-based nanoscale polycrystalline materials.     

Spring-Like Ammonium Salt Assisting Stress Release for Low-Temperature Deposited FAPbI3 Films Toward Flexible Photovoltaic Application

The substrates of conventional flexible perovskite solar cells (FPSCs) are thermoplastic polymer material polyethylene naphthalate (PEN), which will deform during high temperature annealing process. In addition, lead iodide (PbI₂) permanently formed and the substrate undergoes reversible deformation from 20 °C to 200 °C and back to 20 °C. Therefore, to balance the substrate supporting capacity and the crystalline quality of narrow band gap α-phase formamidinium lead iodide (α-FAPbI₃), an annealing process of 120 °C for 30 minutes is determined. Additionally, there will also be a large number of gaps and lattice strain at the perovskite grain boundaries during the annealing process as the FAPbI₃ phase transition is accompanied by much lattice shrinkage. As a result, 1,6-hexanediammonium diiodide (HADI) is chosen to passivate the defects and release the stress of perovskite film. Therefore, a recorded 1.4% extended stretch rate of the flexible film is attained. Finally, the champion PCE of 21.14% under AM 1.5G and 31.52% under 1062 lux is achieved after HADI treatment, accompanied by a better long-term and mechanical stability. This study provides annealing process optimization and stress relief strategies for the further development of narrow band gap FPSCs.