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1.
介绍了一种当前铝加工设备中常见的卧式厚箔剪切机.重点分析了其中剪切装置的工作原理,并就其缺陷提出改进方案.  相似文献   
2.
The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10-3 to 5×10-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n + inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n+ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage  相似文献   
3.
Plasma spraying and pack-aluminising processes were combined and applied to the nickel-base superalloy Mar-M247 to improve its cyclic oxidation resistance. The performance tests of duplex ZrO2-8 wt.%Y2O3/MCrAlY thermal barrier coatings (TBCs) were conducted at 1050 °C, 1075 °C, 1100 °C, 1150 °C and 1200 °C. The results of the experiments in this study showed that TBC specimens with the aluminised MCrAlY bond coat exhibited higher cyclic lives (except for the Ni-22Cr-10Al-1Y bond coat), at all the temperatures tested, than specimens on which the bond coat was not aluminised. The microstructures of the Co-29Cr-6Al-1Y, Co-32Ni-21Cr-8Al-0.5Y and Ni-22Cr-10Al-1Y bond coats with or without aluminising treatment were examined in detail using a scanning electron microscope equipped with an electron probe microanalyzer.  相似文献   
4.
A novel and efficient approach is proposed to calculate the dispersions of the guided modes of the photonic-crystal fibers (PCFs). Based on the vector boundary-element method (VBEM), the surface integral equations for the first and second derivatives of the propagation constants with respect to the wavelength are explicitly derived. Compared with the three-point finite-difference approach, which needs to solve and search three effective indexes near the interested wavelength, this approach can determine the dispersions of the PCFs by only solving one effective index at this wavelength based on the derived formulations. This novel approach saves over 60% computing time without losing the accuracy. Based on this approach, a novel four-ring PCF is designed by optimizing only three geometrical parameters to achieve the nearly zero ultra-flattened dispersion property. Compared with previously presented dispersion-flattened PCFs, the design procedure for the four-ring structure could be more efficient and easier because relatively lesser parameters need to be optimized.  相似文献   
5.
基于VHDL实现单精度浮点数的加/减法运算   总被引:1,自引:0,他引:1  
覃霖  曾超 《电子工程师》2008,34(7):52-55
研究了单精度浮点数加/减法的结构及其设计方法,并在Aldec公司的Active—HDL软件环境下,采用VHDL语言进行设计,并进行了仿真验证,计算精度可以达到10^-7。  相似文献   
6.
The synthesis of a p‐toluidine/formaldehyde (PTF) resin was performed, and the effects of the molar ratio of the individual monomers and the polymerization conditions on the structure of the PTF resin were studied. Fourier transform infrared and 13C‐NMR spectra were used to characterize the PTF. Wide‐angle X‐ray diffraction patterns revealed the crystalline structures of various PTFs. Polarized optical microscopy revealed that the molar ratio of the monomers had a strong effect on the crystalline morphologies. A longer polymerization time turned out a polymer with a higher intrinsic viscosity and molecular weight, which led to differences in the proton conductivity. All of the PTFs showed a higher proton conductivity than a commercial Nafion membrane at 90–100°C and 0% relative humidity. The proton conductivity of the PTF series could be improved by sulfonation with sulfuric acid and could be maintained after blending with polyurethane. Pure methanol could be used as a fuel source because of the insolubility and nonwetting properties of PTF in methanol to increase the output current density for a PTF membrane electrode assembly. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci 2008  相似文献   
7.
BID: a novel BH3 domain-only death agonist   总被引:1,自引:0,他引:1  
The BCL-2 family of proteins consists of both antagonists (e.g., BCL-2) and agonists (e.g., BAX) that regulate apoptosis and compete through dimerization. The BH1 and BH2 domains of BCL-2 are required to heterodimerize with BAX and to repress cell death; conversely, the BH3 domain of BAX is required to heterodimerize with BCL-2 and to promote cell death. To extend this pathway, we used interactive cloning to identify Bid, which encodes a novel death agonist that heterodimerizes with either agonists (BAX) or antagonists (BCL-2). BID possesses only the BH3 domain, lacks a carboxy-terminal signal-anchor segment, and is found in both cytosolic and membrane locations. BID counters the protective effect of BCL-2. Moreover, expression of BID, without another death stimulus, induces ICE-like proteases and apoptosis. Mutagenesis revealed that an intact BH3 domain of BID was required to bind the BH1 domain of either BCL-2 or BAX. A BH3 mutant of BID that still heterodimerized with BCL-2 failed to promote apoptosis, dissociating these activities. In contrast, the only BID BH3 mutant that retained death promoting activity interacted with BAX, but not BCL-2. This BH3-only molecule supports BH3 as a death domain and favors a model in which BID represents a death ligand for the membrane-bound receptor BAX.  相似文献   
8.
根据我国专利法的原则,在对我国催化重整和芳烃生产专利检索过程和结果进行分析的基础上,阐述了对目前我国催化重整工艺专利市场的几点看法并提出对策。  相似文献   
9.
Interconnect parasitic parameters in integrated circuits have significant impact on circuit speed. An accurate monitoring of these parameters can help to improve interconnect performance during process development, provide information for circuit design, or give useful reference for circuit failure analysis. Existing extraction methods either are destructive (such as SEM measurement) or can determine only partial parasitic parameters (such as large capacitor measurement). In this paper, we present a new method for extracting interconnect parasitic parameters, which can simultaneously determine the interlayer and intralayer capacitances, line resistance, and effective line width. The method is based on two test patterns of the same structure with different dimensions. The structure consumes less wafer area than existing methods. The method shows good agreement with SEM measurement of dielectric thickness in both nonglobal planarized and chemical-mechanical polished processes, and gives accurate prediction of the process spread of a ring oscillator speed over a wafer  相似文献   
10.
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