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91.
Materials which show novel thermal properties can be used to make highly efficient and environmentally friendly energy systems for thermal energy storage and refrigeration through caloric effects. An A-site-ordered quadruple perovskite-structure oxide, NdCu3Fe4O12, is found to release significant latent heat, 25.5 kJ kg−1 (157 J cc−1), at the intersite-charge-transfer transition temperature near room temperature. The transition is first-order and accompanied by an unusual magnetic ordering and a large negative-thermal-expansion-like volume change, and thus, it causes a large entropy change (84.2 J K−1 kg−1). The observed entropy change is comparable to the largest changes reported in inorganic solid materials, and more importantly, it is utilized through a colossal barocaloric effect. The adiabatic temperature change by applying 5.1 kbar pressure is estimated to reach 13.7 K, which means efficient refrigeration can be realized through this effect.  相似文献   
92.
An advanced regression scheme is proposed to analyze fine leak batch testing data of multiple MEMS packages. The scheme employs the forward-stepwise regression method to infer the information of leaky packages from a batch test data. The analysis predicts the number of leaky packages and the true leak rate of each leaky package in a progressive manner. The scheme is implemented successfully using an actual batch test data obtained from wafer-level hermetic MEMS packages. An error analysis is followed to define the applicable domain of the scheme. Advanced formulations are also suggested to extend the applicable domain.  相似文献   
93.
For a surface-channel n-MOSFET and a buried-channel p-MOSFET, the effect of plasma process-induced damage on bias temperature instability (BTI) was investigated. The gate oxide thickness, tox, of the test MOSFETs was 2.0, 3.0, or 4.5 nm. The shifts of threshold voltage Vth and of linear drain current Idlin were measured after applying a BTI stress at a temperature of 125 °C. The measured shifts of Vth and Idlin indicate that BTI on ultra-thin gate CMOS devices appears only in the form of SiO2/Si interface degradation, and that the positive BTI for the n-MOSFET as well as the negative BTI for the p-MOSFET is important for the reliability evaluation of CMOS devices. Because of positive plasma charging to the gate, a protection diode was very efficient at reducing BTI for the p-MOSFET, but it was much less effective for the n-MOSFET.  相似文献   
94.
The popular IEEE 802.11 wireless local area network (WLAN) is based on a carrier sense multiple access with collision avoidance (CSMA/CA), where a station listens to the medium before transmission in order to avoid collision. If there exist stations which can not hear each other, i.e., hidden stations, the potential collision probability increases, thus dramatically degrading the network throughput. The RTS/CTS (request-to-send/clear-to-send) frame exchange is a solution for the hidden station problem, but the RTS/CTS exchange itself consumes the network resources by transmitting the control frames. In order to maximize the network throughput, we need to use the RTS/CTS exchange adaptively only when hidden stations exist in the network. In this letter, a simple but very effective hidden station detection mechanism is proposed. Once a station detects the hidden stations via the proposed detection mechanism, it can trigger the usage of the RTS/CTS exchange. The simulation results demonstrate that the proposed mechanism can provide the maximum system throughput performance.  相似文献   
95.
96.
An endocrine disruptor (ED) is a type of xenobiotic compound that can cause serious diseases related to the estrous cycle, as well as various types of cancer. At low ED concentrations, estrogen receptors may respond as they would under physiological conditions. In this work, aptamer‐functionalized multidimensional conducting‐polymer (3‐carboxylate polypyrrole) nanoparticles (A_M_CPPyNPs) are fabricated for use in an FET sensor to detect bisphenol A (BPA). The multidimensional system, M_CPPyNPs, is first produced by means of dual‐nozzle electrospray of pristine CPPyNPs and vapor deposition polymerization of additional conducting polymer. The M_CPPyNPs are then immobilized on an amine‐functionalized (–NH2) interdigitated‐array electrode substrate, through the formation of covalent bonds with amide groups (–CONH). The amine‐functionalized BPA‐binding aptamer is then introduced in the same way as that for M_CPPyNP immobilization. The resulting A_M_CPPyNP‐based FET sensors exhibit ultrasensitivity and selectivity towards BPA at unprecedentedly low concentrations (1 fm ) and among molecules with similar structures. Additionally, due to the covalent bonding involved in the immobilization processes, a longer lifetime is expected for the FET sensor.  相似文献   
97.
In this work, the coplanar waveguide is fabricated on a PES (poly[ether sulfone]) substrate for application to a flexible monolithic microwave integrated circuit, and its RF characteristics were thoroughly investigated. The quality factor of the coplanar waveguide on PES is 40.3 at a resonance frequency of 46.7 GHz. A fishbone‐type transmission line (FTTL) structure is also fabricated on the PES substrate, and its RF characteristics are investigated. The wavelength of the FTTL on PES is 5.11 mm at 20 GHz, which is 55% of the conventional coplanar waveguide on PES. Using the FTTL, an impedance transformer is fabricated on PES. The size of the impedance transformer is 0.318 mm × 0.318 mm, which is 69.2% of the size of the transformer fabricated by the conventional coplanar waveguide on PES. The impedance transformer showed return loss values better than –12.9 dB from 5 GHz to 50 GHz and an insertion loss better than –1.13 dB in the same frequency range.  相似文献   
98.
We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10?1 cm2/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m2 was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.  相似文献   
99.
Optimized contrast enhancement for real-time image and video dehazing   总被引:1,自引:0,他引:1  
A fast and optimized dehazing algorithm for hazy images and videos is proposed in this work. Based on the observation that a hazy image exhibits low contrast in general, we restore the hazy image by enhancing its contrast. However, the overcompensation of the degraded contrast may truncate pixel values and cause information loss. Therefore, we formulate a cost function that consists of the contrast term and the information loss term. By minimizing the cost function, the proposed algorithm enhances the contrast and preserves the information optimally. Moreover, we extend the static image dehazing algorithm to real-time video dehazing. We reduce flickering artifacts in a dehazed video sequence by making transmission values temporally coherent. Experimental results show that the proposed algorithm effectively removes haze and is sufficiently fast for real-time dehazing applications.  相似文献   
100.
In this study, polymer solar cells (PSCs) doped with Au nanoparticles (Au NPs) were successfully fabricated to maximize the photon-harvesting properties on the photoactive layer. In addition, a conductivity-enhanced hybrid buffer layer was introduced to improve the photon absorption properties and effectively separate the generated charges by adding Au NPs and dimethylsulfoxide (DMSO) to the PH 500 as a buffer layer. The PSC performance was optimized with a 88% improvement over the conventional PSCs (photoactive area: 225 mm2, power conversion efficiency (PCE): 3.2%) by the introduction to the buffer layer of Au NPs and DMSO at 10 wt% and 1.0 wt%, respectively, and with 15 wt% Au NP doping in the photoactive layer. The internal resistance was decreased due to the increased photocurrent caused by the localized surface plasmon resonance (LSPR) effect of the Au NPs in the photoactive layer and by the improvement of carrier mobility induced by the DMSO doping of the buffer layer. As a result, the series resistance (RS) deceased from 42.3 to 19.7 Ω cm2 while the shunt resistance (RSH) increased from 339 to 487 Ω cm2.  相似文献   
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