High strain rate compression behavior for Sn-37Pb eutectic alloy, lead-free Sn-1Ag-0.5Cu and Sn-3Ag-0.5Cu alloys

This paper emphasized on studying the high strain-rate compression behavior of the unleaded Sn-3Ag-0.5Cu (SAC305), Sn-1Ag-0.5Cu (SAC105) solders and the traditional Sn-37Pb eutectic solder. The split Hopkinson pressure bar (SHPB) apparatus was used to conduct high strain rate tests in order to characterize the associated high rate mechanical response of these alloys. Specimens were tested at strain rates ranging from 380 to 3030 s⁻¹ to obtain the dynamic stress-strain relationship for the Sn-37Pb, SAC305 and SAC105 alloys. The tested soft and ductile samples experienced a large amount of elastoplastic deformation due to impact test. In the high strain rate range studied, limited strain rate hardening effect was observed for SAC305, SAC105 and Sn-37Pb alloys studied. The strain rate sensitivity parameter (m) related to the power law creep equation was also calculated for the present solder materials at specific strain values. In addition, the saturation stresses for the leaded and lead-free solders at the strain rate range studied are also reported.     

A Fundamental 90-GHz CMOS VCO Using New Ring-Coupled Quad

A new circuit topology, named ring-coupled quad for millimeter-wave voltage controlled oscillator (VCO) design, is proposed. The proposed circuit topology provides higher open loop voltage gain than conventional cross-coupled pair. The layout of the proposed ring-coupled quad is fully symmetric without additional interconnection lines. A 90-GHz VCO using 90-nm CMOS process is implemented with this ring-coupled quad. This 90-GHz oscillator demonstrates a 2.5-GHz tuning range and higher than -20dBm output power. The proposed ring-coupled quad is suitable for the realization of high frequency VCOs     

High-speed Modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-/spl mu/m emission wavelength

1.27-/spl mu/m InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% as the temperature raised from room temperature to 70/spl deg/C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of /spl sim/5.25 GHz/(mA)/sup 1/2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C.     

A novel ultracompact two-mode-interference wavelength division multiplexer for 1.5-/spl mu/m operation

A novel ultracompact 2/spl times/2 wavelength division multiplexer (WDM) for 1.55-/spl mu/m operation based on highly dispersive two-mode interference (TMI) was designed, theoretically modeled, and verified using a finite-difference-time-domain (FDTD) method. A two-moded waveguide assisted with a dispersive tooth-shaped grating provided a mode-dependent reflection band of central wavelength at 1.55 /spl mu/m. The wavelengths of 1538 and 1572 nm that were at the band edges and had the lowest reflection losses and relatively high dispersion were selected for wavelength multiplexing. The result showed that the wavelengths were separated by grating dispersion in a coupler length of 75 /spl mu/m which was much shorter than the required length of 1.1 mm in a regular TMI multiplexer of no grating. Insertion loss of about 1.7 dB and channel contrast of about 12 dB were achieved.     

Reliability evaluation of class-E and class-a power amplifiers with nanoscaled CMOS technology

Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation subcircuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.     

Nanomechanical characterization of polymer using atomic force microscopy and nanoindentation

The nanomechanical characteristics of polycarbonate (PC) polymer were investigated by atomic force microscope (AFM) and nanoindentation. Scratching, wear properties, hardness and Young's modulus were obtained. The relationships between scribing feed and speed, surface depth and roughness and applied load were also investigated. The results indicated that as the applied load was increased, the furrow depth and the surface roughness increased. When the scribing feed was increased, the depth and roughness decreased. Increasing the furrow speed also decreased the surface roughness. The applied load is more significant than the scribing speed on the material removal rate. In addition, the Young's modulus and hardness of the polycarbonate material were 1.8 and 0.2 GPa, respectively.     

A Cost-Effective Design for MPEG-2 Audio Decoder with Embedded RISC Core

MPEG-2 audio decoding algorithms are involved of several complex coding techniques and therefore difficult to be implemented by an efficient dedicated architecture design. In this paper, we present an effective architecture for the MPEG-2 audio decoder. The MPEG-2 audio algorithms can be roughly divided into two types of operations. The first type is regular but computation-intensive such as filtering, matrixing, degrouping, and transformation operations. The second type is not regular but computation-intensive such as parsing bitstream, setting operation mode and controlling of all system operations. A RISC core with variable instruction length is designed for the decision-making part, and the dedicated hardware such as special divider, and synthesis filterbank is designed for the computation-intensive part. Based on the standard cell design technique, the VLSI chip consists of 27000 gate counts with the chip size of 6.4 × 6.4 mm². The chip can run at maximum 43.5 MHz clock rate, with the power dissipation of 150 mW at 3 V power supply.     

A Vlsi Neural Network Processor Based on Hippocampal Model

The hippocampal region of the brain system can be analyzed with the nonlinear system modeling approach. The input-output relationship of the neural units is best represented by the kernel functions of different complexities. The modeling expression of the first and second order kernels are computed in analog current-mode instead of digital data processing in order to fully explore massively parallel processing capability of the neural networks. Two distinct methods are utilized: the table-look-up approach and the model-based approach. The former can achieve high accuracy but consumes large silicon area while the latter saves silicon area and maintains moderately high accuracy. Circuit-level simulation results and experimental data from two test structures are presented.     

Comparison of effects between large-area-beam ELA and SPC on TFTcharacteristics

Thin film transistors (TFTs) with channel dimensions between 0.5 μm and 5 μm were fabricated using a low-temperature process of 600°C with single-shot excimer laser annealing (ELA) having a large-area beam of 45×45 mm². The uniformity in device characteristics across the ELA-treated region was studied. As the channel size decreases, TFT performance and their uniformity for ELA devices were superior compared to those formed with solid phase crystallization (SPC). The superior characteristics by ELA can be explained by the resulting grains with higher crystallinity. TFTs fabricated using ELA having a uniform beam are promising candidates for future LCD peripheral circuits on inexpensive glass and for LSI