Effective prediction and resource allocation method (EPRAM) in fog computing environment for smart healthcare system

Multimedia Tools and Applications - Recently, many concepts in technology has been changed. According to the digital transformation trends, Internet of Things (IoT) represents an interested...     

The Boundedness and the Global Mittag-Leffler Synchronization of Fractional-Order Inertial Cohen–Grossberg Neural Networks with Time Delays

Neural Processing Letters - The boundedness and the global Mittag-Leffler synchronization (GMLS) of fractional-order inertial Cohen–Grossberg neural networks (CGNNS) with time delays are...     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Modeling of Ignition and Combustion of a Coflowing Hydrogen Jet in a Supersonic Air Flow

Combustion, Explosion, and Shock Waves - Results of a numerical study of mixing, ignition, and combustion of a cold hydrogen jet propagating along the lower wall of a channel parallel to a...     

Low light enhancement algorithm for color images using intuitionistic fuzzy sets with histogram equalization

Multimedia Tools and Applications - In this work, a new fuzzy logic-based algorithm is proposed for the enhancement of low light color images. A generalization of a fuzzy set known as an...     

Three dimensional reconstruction of brain tumor along with space occupying in lesions

Multimedia Tools and Applications - The three-dimensional models of brain tumors serve as diagnostic assistance for physicians, surgeons, and radiologists. The proposed system establishes an...     

Alkylated lignin with graft copolymerization for enhancing toughness of PLA

Journal of Materials Science - A green modification method for effectively enhancing toughness of PLA was established. Herein, alkaline lignin (LG) was firstly alkylated with dodecane, and then...     

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

Journal of Materials Science - Molybdenum oxide (MoOx) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)6 precursor and O2 plasma reactant in a substrate...     

Low Temperature Characteristics of the Metal–Superconductor NIS Tunneling Thermometer

We discuss the temperature dependence of a common low temperature local thermometer, a tunnel junction between a superconductor and a normal metal (NIS junction). Towards the lowest temperatures its characteristics tend to saturate, which is usually attributed to selfheating effects. In this technical note, we reanalyze this saturation and show that the temperature independent subgap current of the junction alone explains in some cases the low temperature behavior quantitatively.