三维频率复用环境中的信道偏移指配方法

一种新的信道指配法－信道偏移指配方法正受到越来越多的重视，这种方法能在现有的频率资源条件下，较大地提高移动通信系统的容量。本文主要讨论了三维频率复用环境中的信道偏移指配方法，详细地分析了同频复用和相邻信道使用距离，定量地计量了信道偏移系统的频谱节约效率。本文最后还通过几个实例验证了所提算法的实用性。     

我国有线电视事业的现状和发展

本文详细系统地介绍了我国有线是视发展历史和现状，及其经营和管理方法。重点介绍了北美的ＣＡＴＶ技术发展动向。最后，指出我国ＣＡＴＶ事业发展中的应用重视的问题。     

激光跟踪测距仪在体育领域中的应用

介绍了激光的特点及激光跟踪测距仪的工作原理 ,在此基础上 ,设计了一种激光跟踪测距系统 ,对该系统的组成及主要部件进行了阐述 ,给出了该系统的主要性能数据 ,并对该系统在体育领域中的应用前景作了展望。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Numerical simulation model of vibration responses of rectangular plates embedded with piezoelectric actuators

A numerical simulation model for random large amplitude vibration control of composite plate using piezoelectric material is presented. The H_∞ control design is employed to suppress the large amplitude vibrations of composites plates under random loading. The numerical simulation model is developed and based on the finite element method. The finite element governing equation includes fully coupled structural and electrical nodal degrees of freedom, and consider the von Karman large amplitude vibration. The modal reduction method using the structural modes is adopted to reduce the finite element equations into a set of modal equations with fewer degrees of freedom. The modal equations are then employed for controller design and time domain simulation. In the simulations without control, the value of the linear mode to the nonlinear deflection is quantified; and the minimum number of linear modes needed for accurate model is obtained. In the simulations with control, it is shown that the truncated modes, which are neglected in the control design, deteriorate the controller performance. Generally, the vibration reduction level is not monotonically increasing with the size of the piezoelectric actuator. The optimal piezoelectric actuator size depends on the excitation level. For higher excitation level, optimal actuator size is larger. The H_∞ controller based on the linear finite element formulation gives better vibration reduction for small amplitude vibration, but it still gives reasonable performance for large amplitude vibration provided that the piezoelectric actuator is big and powerful enough.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

The effects of growth factors on Tenon''s capsule fibroblasts in serum-free culture

Recent studies from our laboratory have shown that in the mouse and rat nephron Ca2+ and Mg2+ are not reabsorbed in the medullary part of the thick ascending limb (mTAL) of Henle's loop. The aim of the present study was to investigate whether the absence of transepithelial Ca2+ and Mg2+ transport in the mouse mTAL is due to its relative low permeability to divalent cations. For this purpose, transepithelial ion net fluxes were measured by electron probe analysis in isolated perfused mouse mTAL segments, when the transepithelial potential difference (PDte.) was varied by chemical voltage clamp, during active NaCl transport inhibition by luminal furosemide. The results show that transepithelial Ca2+ and Mg2+ net fluxes in the mTAL are not driven by the transepithelial PDte. At zero voltage, a small but significant net secretion of Ca2+ into the tubular lumen was observed. With a high lumen-positive PDte generated by creating a transepithelial bath-to-lumen NaCl concentration gradient, no Ca2+ and Mg2+ reabsorption was noted; instead significant and sustained Ca2+ and Mg2+ net secretion occurred. When a lumen-positive PDte was generated in the absence of apical furosemide, but in the presence of a transepithelial bath-to-lumen NaCl concentration gradient, a huge Ca2+ net secretion and a lesser Mg2+ net secretion, not modified by ADH, were observed. Replacement of Na+ by K+ in the lumen perfusate induced, in the absence of PDte changes, important but reversible net secretions of Ca2+ and Mg2+. In conclusion, our results indicate that the passive permeability of the mouse mTAL to divalent cations is very low and not influenced by ADH. This nephron segment can secrete Ca2+ and Mg2+ into the luminal fluid under conditions which elicit large lumen-positive transepithelial potential differences. Given the impermeability of this epithelium to Ca2+ and Mg2+, the secretory processes would appear to be of cellular origin.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.     

Adhesive Contact of a Membrane with a Hemispherical Indenter: Theoretical Analysis and Model Liquid System

The axisymmetric Laplace equation is solved numerically to extract contact-angle data for a flat liquid/vapor interface contacting a submerged hemispherical solid. The liquid/vapor interface is treated as a membrane, with a membrane tension equal to the surface energy of the liquid. By measuring the vertical displacement of the membrane and the projected contact area the membrane makes with the hemisphere, the contact angle and correspondingly the driving force for motion of the contact line can be measured. We show that characteristic receding and advancing contact angles can be obtained by measuring the contact radii formed upon initial contact between the interface and hemisphere and final contact just prior to detachment of the interface, respectively. Use of the technique is illustrated with a model experiment involving the contact of an air/water interface with a poly(methyl methacrylate) surface.