Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation.     

High-speed operation in printed organic inverter circuits with short channel length

We have demonstrated fast operation of printed organic inverter circuits. We employ a soluble organic semiconducting material which has high field-effect mobility and ink-jet printed source/drain electrodes with short channel length. Appropriate concentration of the semiconducting solution and modification layer of source/drain electrodes improve both mobility and on/off ratio. The fabricated transistors with a short channel length (4 μm) exhibit excellent mobility (1.2 cm²/V s), high on/off ratio (>10⁵) and operational stability. The diode-load inverter with a narrow channel and low parasitic capacitance operate at 8 kHz at 20 V. These results will lead to significant progress in applications of printed organic circuits.     

Nano Molecular‐Platform: A Protocol to Write Energy Transmission Program Inside a Molecule for Bio‐Inspired Supramolecular Engineering

In a coded self‐assembly, a simple code is written in the molecule, which self‐assembles the molecules into a fractal like structure, which acts as a seed for the next step. As the molecule turns into a complex seed, the code transforms into another form and several seeds self‐assemble into another structure, which acts as a seed for the next step. Until now, this technology was considered as a prerogative of nature. Here, a dendritic network is used to write a basic code by synthetically attaching 32 molecular rotors and doping two controller molecules in its cavity. The code live, which is an energy transmission path in the molecule, is imaged. When the energy transmission path or code is triggered, a series of products generate one after another spontaneously. Two examples are: i) dendritic seed (5–6 nm)→paired nanowire (≈12 nm)→nanowire (≈200 nm)→microwire (500 nm)→wire like rod (1–2 μm)→jelly→rectangular sheet (5 μm). ii) dendritic seed→nano‐sphere (20 nm)→micro‐sphere (500 nm)→large balls(1 μm)→oval shape rod (5–10 μm)→Y, L or T shaped rod assembly. The energy level interactions are tracked using spectroscopy how exactly a directed energy transfer code generates multi‐step synthesis from nano to the visible scale.     

Performance analysis of variable optical delay circuit using highly nonlinear fiber parametric wavelength converters

The performance of a variable optical delay circuit that employs a fiber loop with highly nonlinear fiber parametric wavelength converters is discussed using both experiments and simulations. In our optical delay circuit, the delay time is determined from the number of circulations, which is controlled by the initially selected wavelength of the optical signal. We discuss the factors that limit the number of circulations described in our previous paper, derive the parameters that provide good performance levels, and confirm the performance by simulation. The simulated results indicate that 100 wavelength conversions can be achieved, namely, 100 different delay times can be given to optical packets.     

Analytical electron microscopy and electron holography on microstructures and magnetic domain structures of Sm-Co 2:17 magnets

Microstructures and magnetic domain structures of precipitation-hardened Sm-Co permanent magnets were systematically investigated by analytical electron microscopy and electron holography. By an elemental mapping method with energy-dispersive X-ray spectroscopy, the change in the local distribution of additive elements, i.e. Cu, Fe and Zr, in Sm-Co magnets with various heat treatments was visualized and the enrichment of Zr in the Z-phase with a width of approximately 1 nm was clarified directly. Detailed analysis with electron holography revealed that considerable fluctuation in the distribution of lines of magnetic flux in the step-aged magnet was due to the chemical partitioning of additives and resulted in magnetic hardening during the magnetization process.     

Transmission of 2-ps optical pulses at 1550 nm over 40-km standardfiber using midspan optical phase conjugation in semiconductor opticalamplifiers

We demonstrate transmission of 2-ps optical pulses at 1550 nm over 40 km of standard fiber by employing midspan optical phase conjugation in semiconductor optical amplifiers (SOAs). The second-order group-velocity dispersion of the fiber is completely compensated and the third-order dispersion becomes a major transmission limitation. This experiment shows that the midspan optical phase conjugation system using SOAs is applicable to ultrahigh bit rates greater than 100 Gb/s     

PIV measurement and turbulence scale in turbulent combustion

We have investigated turbulent combustion by PIV (Particle Image Velocimetry) technique. Comparing with LDV data, the validity of PIV measurements has been confirmed. Particularly, the conditions of sampling number and spatial resolution have been shown to yield reliable data using PIV. Based on the velocity fields in cold flow and combustion, the interaction between flame and flow has been discussed. It was observed that the flow field is changed by combustion and the turbulence is reduced. In order to determine statistical quantities such as mean velocity and RMS of velocity fluctuation, a sampling number of 1000 is needed. Moreover, the velocity correlation coefficient was evaluated to obtain the integral length scale of the flow. For both cold flow and combustion, the PIV estimated scale is very close to that of LDV based on the assumption of Taylor's hypothesis. As a result, the spatial resolution in this study is about 6 times smaller than the integral length scale. © 2006 Wiley Periodicals, Inc. Heat Trans Asian Res, 35(7): 501–512, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/htj.20129     

Preparation and properties of CuInS2 thin film prepared from electroplated precursor

Thin CuInS₂ films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS₂ film followed. To determine whether the condition of the Cu/In alloy influences the CuInS₂ quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS₂ film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization.     

Steam absorption process of water/LiBr system inside vertical small bore pipes

In a previous paper, a numerical model for absorption within vertical pipes was proposed and compared with the experiments. Agreements were good for pipes with an OD 28–15 mm but at 10 mm pipe experiments fell below the predicted values. For smaller diameters, the difference between the surface area of the falling liquid film and that of the outer surface of the pipe is not negligible and the thickness of the liquid film is also not negligible. In this paper a new model is formulated in cylindrical coordinates and experiments using pipes with 9.52 mm and 7 mm OD are done. Smooth pipes and two kinds of internally finned pipes, originally developed and used to enhance the heat transfer characteristics of the evaporator and condenser of a refrigerator using HFC as refrigerant, are tested in the experiments. The absorption performance is enhanced by 30% when compared to the smooth pipes, but the difference between the finned pipes is small. © 2004 Wiley Periodicals, Inc. Heat Trans Asian Res, 34(1): 18–28, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/htj.20040