High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

λ/64‐spaced compact ESPAR antenna via analog RF switches for a single RF chain MIMO system

In this study, an electronically steerable parasitic array radiator (ESPAR) antenna via analog radio frequency (RF) switches for a single RF chain MIMO system is presented. The proposed antenna elements are spaced at λ/64, and the antenna size is miniaturized via a dielectric radome. The optimum reactance load value is calculated via the beamforming load search algorithm. A switch simplifies the design and implementation of the reactance loads and does not require additional complex antenna matching circuits. The measured impedance bandwidth of the proposed ESPAR antenna is 1,500 MHz (1.75 GHz–3.25 GHz). The proposed antenna exhibits a beam pattern that is reconfigurable at 2.48 GHz due to changes in the reactance value, and the measured peak antenna gain is 4.8 dBi. The reception performance is measured by using a 4  4 BPSK signal. The measured average SNR is 17 dB when using the proposed ESPAR antenna as a transmitter, and the average SNR is 16.7 dB when using a four‐conventional monopole antenna.     

基于对数螺旋曲线的宽带高仰角HF小型化通信天线

介绍一种工作在3~30 MHz的宽带、圆极化、高仰角、短波小型化天线。天线以对数螺旋线为基本结构,具有底端RLC集总元件的复合加载结构,并采用矩量法进行天线设计和优化。天线尺寸在25 m×25 m×10 m范围内。实践表明,该天线具有占地小、架设简便、效率高、200 km范围内无盲区等优点,可广泛应用于短波机动通信领域。     

Wide‐Band Fine‐Resolution DCO with an Active Inductor and Three‐Step Coarse Tuning Loop

This paper presents a wide‐band fine‐resolution digitally controlled oscillator (DCO) with an active inductor using an automatic three‐step coarse and gain tuning loop. To control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. To cover the wide tuning range, a three‐step coarse tuning scheme is used. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. The DCO tuning range is 58% at 2.4 GHz, and the power consumption is 6.6 mW from a 1.2 V supply voltage. An effective frequency resolution is 0.14 kHz. The phase noise of the DCO output at 2.4 GHz is –120.67 dBc/Hz at 1 MHz offset.     

Electronic structures and phase transition characters of β-, P61-, P62-and δ-Si3N4 under extreme conditions: a density functional theory study

This paper describes the results of structural, electronic and elastic properties of silicon nitride(in its high-pressure P61 and P62 phases) through the first-principles calculation combined with an ultra-soft pseudopotential. The computed equilibrium lattice constants agree well with the experimental data and the theoretical results. The strongest chemical bond(N–Si bond) shows a covalent nature with a little weaker ionic character. P61-Si3N4 is more stable than P62-Si3N4 due mainly to the fact that the shorter N–Si bond in the P61 phase allows stronger electron hybridizations. We have also predicted the phase stability of Si3N4 using the quasi-harmonic approximation, in which the lattice vibration and phonon effect are both considered. The results show that the β→P61 phase transition is very likely to occur at 42.9 GPa and 300 K. The reason why the β→P61→δ phase transitions had never been observed is also discussed.     

渤海湾盆地南堡凹陷异常压力系统及其形成机理

渤海湾盆地南堡凹陷异常压力现象普遍发育,但对于凹陷中不同构造带异常压力的刻画与成因机制的探讨却较为薄弱。利用357口井1 354个钻杆测试数据（DST）和重复地层压力测试数据（RFT）,测井曲线资料等,详细刻画了不同构造带的压力结构特征。研究表明：南堡凹陷地层压力系统纵向上可划分为3个带,浅部常压带（<1 800 m）、中部过渡带（1 800~2 400 m）和深部异常高压带（>2 400 m）。沙三段发育大规模异常高压,压力系数最高达1.9,超压带顶界面深度约为2 400 m;老爷庙构造带中、浅层发育低幅度超压带,压力系数约为1.2;滩海地区东一段和东二段局部发育异常低压。利用数值模拟技术和垂直有效应力-声波时差判别图版等方法,并结合烃源岩生排烃过程综合分析等,深入探讨了南堡凹陷不同异常压力系统的形成机理,研究认为：①深部沙三段的大规模超压主要来源于东营时期的泥岩不均衡压实作用,生烃作用也有一定贡献,但相对前者贡献较小;②明化镇时期,生烃作用是最主要的增压机制,而欠压实作用贡献则相对有限;③中浅层低幅超压带来源于深部超压的“传导”,开启的断裂带为其传递通道;④东营末期的区域抬升剥蚀作用引起岩石骨架孔隙回弹和流体收缩,是形成本区异常低压的主要原因。