Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Wireless-adaptive fair scheduling for multimedia stream

As packet cellular networks are expected to support multimedia services, the authors incorporate the multimedia QoS requirements into the design of a new scheduling algorithm. The proposed wireless-adaptive fair scheduling tries to allocate time slots for each user with fair share by considering the varying channel condition while reflecting the stream requirements and achieving high throughput.     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

Extended adaptive RBF equaliser for overcoming co-channelinterference

The authors investigate the problem of nonlinear adaptive equalisation in the presence of intersymbol interference, additive white Gaussian noise and co-channel interference. An extended radial basis function (RBF) network is proposed, in which regression weights are used in the output layer and the hidden unit is defined to have the Gaussian formula with the Mahalanobis distance. It is shown by simulation that the proposed structure gives reduced computational complexity without performance degradation, compared to that of the conventional RBF equaliser     

Robust backward adaptive formant prediction for speech coder

To improve the error performance of speech coders, an adaptation method for the backward adapted formant predictor is proposed. The filtered residual signal is used instead of the reconstructed output signal as the input to an adaptation of the formant predictor. The performance of the filtered-residual driven adaption method in the noise free channel is as good as that of conventional output driven adaptation. Moreover, the new adaptation method maintains the same robustness to channel errors as residual driven adaptation     

Position-sensitive superheated-liquid-droplet neutron dosimeter

The one-dimensional (1D) position-sensitive superheated-liquid-droplet dosimeter (SLDD) has been fabricated and tested in the laboratory. The 1D SLDD is fabricated from a 9.525-mm OD, 6.35-mm ID, 20-cm long, Plexiglas-walled tube filled with a mixture of superheated-liquid Freon droplets and host medium glycerol. Washer-shaped piezoelectric acoustic transducers are positioned at both ends of the tube; they determine the number and positions of the acoustic events when the superheated-liquid droplets evaporate upon neutron irradiation. The SLDD is irradiated with the ¹³⁷Cs and ⁶⁰Co γ-sources, as well as ²⁵²Cf neutron source to test for its radiation response and spatial resolution. The SLDD based on the Freon-134a superheated-liquid droplets operating at 20°C and 1 atm is found to be ideal for measuring absorbed neutron dose. This study also proves that the positions of the radiation-induced nucleation acoustic events can be linearly determined from the differences in the transmission times received by the acoustic transducers on the 1D SLDD. The spatial resolution of the neutron depth-dose is 1 mm due the finite response time (1 μs) of the piezoelectric acoustic transducers.     

PERCHLOROETHYLENE EXTRACTION DESULFURIZATION OF LOW SULFATE COALS

The perchloroethylene coal refining process utilizes perchloroethylene (PCE) as its solvent in all phases of the precombustion desulfurization process, including wet grinding, organic sulfur removal, gravitational separation of pyrites and mineral matter, and recovery of elemental sulfur (S₈). The Process is capable of producing compliance coal which emits less than 1.2 lb SO_X/MBTU when burnt, starting from 5 mass percent sulfur Midwestern and Eastern U.S. coals. However, the process efficiency was found to be very strongly dependent upon the degree of weathering or the level of coal oxidation. In this paper, perchloroethylene extraction data of fresh, low-sulfate coals are summarized and critically assessed. The extraction efficiency of the organic sulfur removal ranged from 5 to 30 percent for fresh coals, while that for weathered coals ranged from 30 to 60 percent. This study provides a valuable insight into the chemical reaction mechanism of perchloroethylene desulfurization process.