Organic Phenolic Configurationally Locked Polyene Single Crystals for Electro‐optic and Terahertz Wave Applications

We investigate a configurationally locked polyene (CLP) crystal 2‐(3‐(4‐hydroxystyryl)‐5,5‐dimethylcyclohex‐2‐enylidene)malononitrile (OH1) containing a phenolic electron donor, which also acts as a hydrogen bond donor. The OH1 crystals with orthorhombic space group Pna2₁ (point group mm2) exhibit large second‐order nonlinear optical figures of merit, high thermal stability and very favorable crystal growth characteristics. Higher solubility in methanol and a larger temperature difference between the melting temperature and the decomposition temperature of OH1 compared to analogous CLP crystals, are of advantage for solution and melt crystal growth, respectively. Acentric bulk OH1 crystals of large sizes with side lengths of up to 1 cm with excellent optical quality have been successfully grown from methanol solution. The microscopic and macroscopic nonlinearities of the OH1 crystals are investigated theoretically and experimentally. The OH1 crystals exhibit a large macroscopic nonlinearity with four times larger powder second harmonic generation efficiency than that of analogous CLP crystals containing dimethylamino electron donor. A very high potential of OH1 crystals for broadband THz wave emitters in the full frequency range of 0.1–3 THz by optical rectification of 160 fs pulses has been demonstrated.     

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 10⁹ cm^?2 to 1 × 10¹³ cm^?2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 10¹⁰ cm^?2. Remarkable changes in device characteristics were seen at a fluence of 1 × 10¹² cm^?2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 10¹² cm^?2. The results found on devices and on the GaN layer were compared and correlated.     

A phase-shift technique for high-speed e-beam testing with picosecond time resolution

Electron beam sampling of high speed digital devices requires a high time resolution. At the same time, long-range phase shifting is necessary because signals in these circuits may have very long period lengths. In this article, a new phase-shift method is described which allows sampling of low repetition rate signals without any degradation of the time resolution. This long range phase shift is realized by an additional set of blanking plates or blanking capacitor, which, acting as a gate, selects one of a large number of electron pulses produced by a first blanking capacitor. This technique also allows fast switching between different phase angles. The phase-shift method was evaluated experimentally using the picosecond e-beam tester which was developed here. The time resolution of this tester has been optimized recently to allow for stroboscopic testing with a 7 ps pulse width at 20 mV/√Hz noise voltage and 0.5 μm spot size. This allows for the measuring of rise times down to 14 ps with an error below 10%. Phase shifts of 100 ns were realized without any degradation of this time resolution. Propagation delays of 3.5 ps could be resolved. Signal rise times of 40 ps, corresponding to 0.04% of the total delay could be easily measured.     

Interaction of nitric oxide and endothelin-1 in ischemia/reperfusion injury of rat heart

Although several studies have demonstrated that nitric oxide appears to be cardioprotective and endothelin-1 (ET-1) deleterious in myocardial ischemia/reperfusion injury, their interactions in the intact heart are unknown. Therefore, coronary effluent and interstitial fluid ("transudate") levels of ET-1 and cyclic GMP, an indirect measure of nitric oxide production, were determined simultaneously in normoxic and reperfused hearts and compared with myocardial and coronary function. Rat hearts were buffer-perfused at 9 ml/min/g heart wet weight for 45 min (baseline), followed either by another 45 min of perfusion (normoxia), or 15 min of total global ischemia and 30 min reperfusion. Hearts received, from 42-90 min, either vehicle, the inhibitor of nitric oxide formation NG-nitro-L-arginine (L-NNA; 200 micromol/l), the nitric oxide donor S-nitroso-N-acetyl-DL-penicillamine (SNAP; 200 micromol/l), or the ET receptor antagonist PD 142893 (200 nmol/l). Both mediators were released preferentially into the vascular lumen which resulted in similar luminal and interstitial concentrations of cyclic GMP, but three-fold higher levels of ET-1 in tissue because of the higher effluent than transudate flow rate. L-NNA increased the release of ET-1 and worsened coronary function, whereas SNAP had opposite effects. On reperfusion, considerable functional impairment was observed, although levels of cyclic GMP both in the vascular and tissue compartment were not reduced, but even increased. Reperfusion functional impairment was aggravated after inhibiting the synthesis of nitric oxide, whereas SNAP restored cardiac and coronary function close to pre-ischemic level. Deterioration of function corresponded with an increased level, and improvement with a decreased level of intersitial ET-1 at the onset of reperfusion. PD 142893 was similarly cardioprotective as SNAP both in normoxia and reperfusion. These results suggest that in reperfusion, cardiac function is depressed, despite increased rather than decreased endogenous nitric oxide production, largely due to the prevalence of the deleterious effects of ET-1 which are overcome by antagonism of ET receptors or exogenous nitric oxide supplied by SNAP.     

Quantifying the influence of cold water intrusions in a shallow,coastal system across contrasting years: Green Bay,Lake Michigan

We present water column thermal structure for two climatically different years: 2012, which experienced abnormally warm spring and summer air temperatures preceded by a relatively low ice winter and 2013, which experienced cooler than average spring and average summer air temperatures and preceded by average ice conditions. Mean bottom water temperatures for the season and during cold water intrusions were significantly warmer in 2012 than 2013 leading to a significantly reduced stratified season in 2012. Cold water intrusions were driven into southern Green Bay by southerly winds while intrusions were terminated when winds switched to persistent northerly winds. 2012 observed a significant increase in northerly winds relative to 2013, decreasing cold water intrusion presence and duration but winds did not fully explain the difference in thermal conditions for southern Green Bay. These cold bottom waters drive stratification in polymictic southern Green Bay while dimictic waters were found to have significantly warmer bottom temperatures during 2012 and a deeper mixed layer. Our observations suggest that relatively shallow (<20?m), seasonally stratified systems may not increase in stratification strength and duration under a warming climate; rather, changing wind climatology and surface heat flux can inform the degree to which the mixing regime can be expected to change and impact stratification and thermal structure of coastal systems. We discuss the biogeochemical implications of different thermal regimes, particularly within the context of multiple drivers of physical water column structure in eutrophic, stratified coastal systems.     

Evidence of persistent,recurring summertime hypoxia in Green Bay,Lake Michigan

Six years (2009–2015) of temperature and dissolved oxygen profile data show hypoxic conditions are common in the bottom waters of southern Green Bay, Lake Michigan during the summer. Depleted oxygen concentrations (<5?mg?L^?1) affect nearly 70% of the 38 stations sampled representing an area of ~500–600?km². Stratification typically lasts 2+?months, from late June to early September, and some stations exhibit bottom water hypoxia (<2?mg?L^?1) at a frequency of nearly 25% when sampled during this period. A monitoring program initiated in 1986 by the Green Bay Metropolitan Sewerage District has provided a 23?year, recreational season record (May–September) of continuous (15?min interval) in situ bottom water oxygen and temperature measurements at the Entrance Light station of the Green Bay navigational channel. The duration of the hypoxic season ranges from 2?weeks to over 3?months at this shallow 7?m offshore site. This variability likely results from a combination of thermal stratification, oxygen consumption in deeper waters of the bay, and physical forcing mechanisms that drive cool, oxygen depleted, bottom waters on a southerly trajectory across this sensor. These data suggest the duration of hypoxic conditions may have increased during the stratified season in recent years. Hypoxia in the bay would also appear to be sensitive to relatively small changes in these forces, particularly changes in organic carbon loading and the duration of stratification.     

Automated analysis of submicron particles by computer-controlled scanning electron microscopy

Automated analysis of submicron particles by computer-controlled scanning electron microscopy is generally possible. The minimum diameter of the detectable particles is dependent on the mean atomic number of the particles and the operating parameters of the scanning microscope. The main limitation with regard to particle size is set by the quality of the particle detection system, which generally is the backscatter electron detector. The accuracy of the results of the x-ray analyses is very often strongly affected by specimen damage, omnipresent especially for environmental particles even at low electron energies and probe currents. With the exception for light elements, the detection limit is approximately 1 wt%. Device-related limitations to automated analysis may be specimen drift and an unreliable autofocus function.     

Occurrence and behaviour of linear alkylbenzenesulphonates, nonylphenol, nonylphenol mono- and nonylphenol diethoxylates in sewage and sewage sludge treatment

The fluxes of linear alkylbenzenesulphonates (LAS), nonylphenol (NP), nonylphenol monoethoxylate (NP1EO) and nonylphenol diethoxylate (NP2EO) through sewage and sludge treatment of 29 Swiss sewage treatment plants were investigated. Reversed-phase high-performance liquid chromatography (HPLC) was used to determine LAS. Normal-phase HPLC was employed to measure NP, NP1EO and NP2EO which are metabolites of the nonionic surfactants of the nonylphenol polyethoxylate type (NPnEO). Quantitative determinations were performed of raw sewage, primary and secondary effluents and of sewage sludge. Under normal conditions of sewage and sludge treatment, LAS were efficiently removed from the raw wastewater (> 99% w/w) and were partly transferred to the sewage sludge (15–20% w/w). About 50% (molar base) of NPnEO in the sewage were transformed to NP and accumulated in the digested sludge. Large variations existed among different sewage treatment plants. It was estimated that 1.0 g m⁻² y⁻¹ of LAS and 0.3 g m⁻² y⁻¹ of NP are applied with sewage sludge to Swiss soils.     

Irradiation effects on AlGaN HFET devices and GaN layers

AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1 × 10⁷ to 1 × 10¹³ cm^?2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1 × 10¹⁰ cm^?2 resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5 × 10¹⁰ cm^?2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1 × 10¹² cm^?2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1 × 10¹² cm^?2. The device results and GaN layer properties are strongly correlated.