The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

铯原子激光共振电离

用Ｎｄ：ＹＡＧ及其泵浦的染料激光进行铯原子三步共振电离。求解了非饱和共振过程速率方程，计算出基态和激发态共振吸收截面，给出电离效率分别与激发电离速率以及作用时间的变化关系，得到饱和激发电离的流量条件和通量条件。     

Magnetic properties of nickel filament polymer-matrix composites

The magnetic properties of polyethersulfone-matrix composites with 3-19 vol.% polycrystalline nickel filaments (0.4 (im diam) were investigated. These filaments were found to exhibit hysteresis energy loss 10800 J/m³ of nickel and coercive force 16.9 kA/m, compared to corresponding values of 4930 J/m³ and 4.7 kA/m for 2 μ.m diam polycrystalline nickel fibers, 1020 J/m³ and 0.5 kA/m for 20 μm diam polycrystalline nickel fibers, and 1280 J/m³ and 2.3 kA/m for solid polycrystalline nickel.     

乙烯基三甲基硅烷等离子体聚合反应历程

应用色谱—质谱(GC-MS)及裂解色谱-质谱(PGC-MS)测定了乙烯基三甲基硅烷等离子体聚合反应中的气体冷凝物及聚合物,研究推导了等离子体聚合反应历程。单体在气相中被电子撞击,然后扩散到基底,在基底发生链增长和链终止反应。     

Characterization of hollow fiber membranes in a permeator using binary gas mixtures

We have studied the CO₂/CH₄ mixed gas permeation through hollow fiber membranes in a permeator. An approach to characterize the true separation performance of hollow fiber membranes for binary gas mixtures was provided based on experiments and simulations. Experiments were carried out to measure the retentate and permeate flow rates and compositions at each outlet. The influences of pressure drop within the hollow fibers, non-ideal gas behavior in the mixture and concentration polarization were taken into consideration in the mathematics model. The calculation results indicate that the net influence of the non-ideal gas behavior, competitive sorption and plasticization yields the calculated CO₂ permeance in a mixed gas permeator close to that obtained in pure gas tests. Whereas the CH₄ permeance is higher in the mixed gas tests than that in the pure gas tests, as the plasticization caused by CO₂ dominates the permeation process. As a result, the CO₂/CH₄ mixed gas selectivity is smaller than those obtained in pure gas tests at equivalent pressures.The calculated membrane performance shows little changes with stage cut if the effect of concentration polarization is accounted for in the calculation. The integration method developed in this study could provide more accurate characterizations of mixed gas permeance of hollow membranes than other estimation methods, as our model considers the roles of non-ideal gas behavior and concentration polarization properly.     

FEATURE SOLID MODELING TOOL SYSTEM:FSMTS

In conformity with the principle of Design for Manufacture,feature-based design strate-(?)es have been developed.As the“feature”is relevant to the“macro process plan”and“macro NCprograms”,obviously,“feature”is beyond the power of conventional solid modellers.Neverthe-less,substantial breakthrough has not been made in the solid modeling field,except“feature at-taching”or“feature recognizing”methods have been taken on.In this paper,the theory,concepts,system architecture,and algorithm principles of solid modeling tool system have beenrepresented.The practice of Feature Solid Modeling Tool System (FSMTS) developed atHuazhong University has proved that the tool may be a new foundation of Feature-Based Design.     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.