三相电压型低谐波PWM整流器主电路参数间的关系

三相电压型低谐波PWM整流器主电路的多个参数之间的关系较为复杂，在仿真和实验中，若给出的参数不合理，则变换器不能正常工作，从而给仿真和实验带来一定困难。文章在考虑了输入电阻的情况下，给出了功率因数角为任意值时，主电路各参数和控制参数间的稳态关系及一些参数的约束关系。上述关系对于分析和设计被研究电路具有很好的指导意义，文中的公式通过了仿真验证。     

YAKS710-4 6 300kW 6kV高压增安型三相异步电动机的研制

介绍了YAKS710－46300kW 6kV高压增安型三相异步电动机的研制过程、性能指标及防爆安全性等，对该电动机的技术经济性进行了分析，并提出了非防爆型避雷器，电容器在防爆危险区域内应用所采取的措施。     

自主飞艇浮力调节系统的建模及控制

针对特定结构的平流层信息平台——自主飞艇，建立了多气囊浮力调节动力学方程．将气囊浮力力矩平衡关系式引入方程组，使多输入双输出耦合系统简化为多输入单输出系统．控制系统分为两级：一级控制系统中，根据非零隶属度存立原则确定模糊控制量的输出，通过调节量化因子和比例因子，弥补了控制过程中专家经验的不足，满足了系统对不同控制阶段的性能要求；二级控制系统采用简单的模糊控制．数字仿真验证了该控制方法的可行性．     

PC系统的电磁兼容检测及其软、硬件设计

本文叙述了计算机系统的电磁兼容检测技术，并从软、硬件两方面提出了抗干扰措施。     

管理层收购的理论依据及对我国实践的效应分析

管理层收购起源于资本市场相对成熟的英美国家,其理论基础是西方经济学家提出的效率提高论,代表理论有代理成本说、防御剥夺说、信息不对称性假说。文章分析了管理层收购对我国企业的正负影响,由此提出今后我国管理层收购的几点思路。     

苯乙烯在三氯化铁/联吡啶/1-溴乙基苯催化体系中聚合

用三氯化铁-2,2'-联吡啶-1-嗅乙基苯催化聚合苯乙烯,研究了聚合反应条件对聚合的影响,三氯化铁/2,2'-联吡啶/1-溴乙基苯摩尔比对聚合的影响,用凝胶渗透色谱研究了分子量和分子量分布。     

线性规划问题的对比教学

对线性规划问题，一般用单纯形法求解。本文探讨了用矩阵及Gauss消元法来处理单纯形法的思想，使学生易于理解、掌握、应用线性规划问题。     

Low-temperature synthesis of nanocrystalline ZnGa2O4:Tb phosphors via the Pechini method

The synthesis of trivalent terbium doped ZnGa₂O₄ nanosized new phosphors by the Pechini method was reported. Well-crystallized ZnGa₂O₄:Tb³⁺ phosphors were obtained at low-temperature about 550 °C. The phosphors formed porous agglomerates which consist of spherical nanocrystallites with a uniform size at about 30 nm. The photoluminescence of the phosphors included both the luminescence of ZnGa₂O₄ host and characteristic emission of Tb³⁺, and the excitation spectra showed an energy transfer from the host lattice to the activator. The Tb³⁺ emission from the phosphors prepared by the Pechini process was more intensive than that of phosphors by solid-state reaction process.     

The measuring method of early lateral energy fraction in the scale model experiments

This paper introduces a measuring method of early lateral energy fraction in the scale model experiments. According to the interference principle of half wave length making the high frequency figure-8 directional microphone. With the signal-processing technique, a receiving and analyzing system, for the measurements of lateral energy fraction in the scale model is realized.     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.