不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

数值试井在白6-2井测试资料分析评价中的应用

数值试井是在近来发展的一项新的试井解释技术，具有处理非均质，复杂边界油气藏问题的优点，弥补了常规解析试井技术的不足。运用数值试井解释技术，结合动、静态资料，通过对白6-1断块白6-2井测试资料的综合分析评价，确定了储层渗流参数，落实了该气藏的边界情况，为该断块下一步开发提供可靠依据。     

工业管道测厚的几点问题探讨

超声波测厚在腐蚀监测上应用越来越广泛,为让这项检测技术更准确、更可靠,充分发挥功效,文章就工业管道测厚中测厚数据处理、测厚点选择、高温问题以及其它影响因素等几个方面进行了探讨。     

ASON实际组网中架构及演进方式分析

对在实际组网中选择合理的ASON架构和保护方式作了相应分析，并为搭建可向ASON平滑演进的传统网络时需注意的问题提供了参考意见，     

Al、Mo含量对铸造钛合金力学性能的影响

运用正交实验 ,考察了Al、Mo含量对Ti Al Mo 1Zr系铸造钛合金力学性能的影响。试验结果表明 :随Al、Mo含量提高 ,铸造合金的强度增加 ,塑性和冲击韧性降低 ,但Al、Mo的交互作用却使合金塑性提高 ,强度和冲击韧性降低     

Data-efficient blind OFDM channel estimation using receiver diversity

We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms.     

岩石物理横波速度曲线计算技术

横波速度是地震勘探中的重要参数。针对实际生产中缺乏横波速度测井曲线资料，利用经验公式计算精确度不高的问题，通过对横波速度计算理论模型的研究分析，选择Blot-Gassman模型法，利用岩石矿物成分、流体成分、孔隙度及密度等测井曲线进行横波速度测井曲线的计算，并对横波速度计算技术和流程进行研究。在实际工区进行了横波速度曲线计算，计算结果与实测横波吻合程度较高，误差小于10％，该技术在储层和流体识别预测的应用中取得了较好效果。     

浅淡城市节水

城市水环境的日益恶化和城市缺水状况的日趋严重,将对人口城市化和经济可持续发展构成威胁。提出了城市节水管理的途径和方法,论述了城市节水管理的可行性,以及城市节水的循环使用效率对缓解城市用水紧张局面的重要意义。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.