Hierarchical production control for a flow shop with dynamic setup changes and random machine breakdowns

In this paper, we study a manufacturing system consisting of two machines separated by two intermediate buffers, and capable of producing two different products. Each product requires a constant processing time on each of the machines. Each machine requires a constant non-negligible setup change time from one product to the other. The demand rate for each product is considered to be piecewise constant. Each machine undergoes failure and repair. The time-to-failure and time-to-repair are exponentially distributed random variables. The setup change and processing operations are resumable. We model our system as a continuous time, continuous flow process. An optimal control problem is formulated for the system to minimize the total expected discounted cost over an infinite horizon. To determine the optimal control policy structure, a discrete version of the problem is solved numerically using a dynamic programming formulation with a piecewise linear penalty function. A real-time control algorithm is then developed with the objective of maintaining low work-in-process inventory and keeping the production close to the demand. The algorithm uses a hierarchical control structure to generate the loading times for each product on each machine in real time and to respond to random disruptions in the system. The system is simulated using this algorithm to study its performance. The performance of the algorithm is also compared to alternative policies.     

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD’s) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm². Fiz. Tekh. Poluprovodn. 32, 1482–1486 (December 1998)     

Deformation of a rectangular plate half-embedded in an elastic base

We have investigated the deformation of a rectangular plate half-embedded in an elastic base and subjected to a mechanical load. Using the apparatus of generalized functions, the problem is reduced to a system of singular integral equations which is solved by the boundary element method. We present the results in the form of isolines of the components of the displacement vector.Translated from Problemy Prochnosti, No. 3, pp. 72–77, March, 1996.     

Use of connected arithmetic spirals for control of openings

We demonstrate that it is possible to use connected arthmetic spirals to control the diameters of openings in metallic objects, including bushings. Computational results and experimental research are presented. Translated from Izmeritel'naya Tekhnika, No. 10, pp. 17–19, October, 1996.     

Distance of pneumotransport of granular materials by retarded dense bed

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 12, pp. 8–10, December, 1993.     

Calculation of an electric field in metal-insulator-metal structures

A method is proposed for calculating an electric field in a thin piezoelectric wafer taking into account the injection of electrons from a metal electrode into an insulator. The static current-voltage characteristic of a metal-insulator-metal structure is given, along with the results of a comparison of calculations and experiment. Translated from Izmeritel'naya Tekhnika, No. 1, pp. 46–48, January, 1996.     

Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices