Quality assurance of PASADENA hyperpolarization for 13C biomolecules

Object  Define MR quality assurance procedures for maximal PASADENA hyperpolarization of a biological ¹³C molecular imaging reagent. Materials and methods  An automated PASADENA polarizer and a parahydrogen generator were installed. ¹³C enriched hydroxyethyl acrylate, 1-¹³C, 2,3,3-d₃ (HEA), was converted to hyperpolarized hydroxyethyl propionate, 1-¹³C, 2,3,3-d₃ (HEP) and fumaric acid, 1-¹³C, 2,3-d₂ (FUM) to hyperpolarized succinic acid, 1-¹³C, 2,3-d₂ (SUC), by reaction with parahydrogen and norbornadiene rhodium catalyst. Incremental optimization of successive steps in PASADENA was implemented. MR spectra and in vivo images of hyperpolarized ¹³C imaging agents were acquired at 1.5 and 4.7 T. Results  Application of quality assurance (QA) criteria resulted in incremental optimization of the individual steps in PASADENA implementation. Optimal hyperpolarization of HEP of P = 20% was achieved by calibration of the NMR unit of the polarizer (B ₀ field strength ± 0.002 mT). Mean hyperpolarization of SUC, P = [15.3 ± 1.9]% (N = 16) in D ₂O, and P = [12.8 ± 3.1]% (N = 12) in H ₂O, was achieved every 5–8 min (range 13–20%). An in vivo ¹³C succinate image of a rat was produced. Conclusion  PASADENA spin hyperpolarization of SUC to 15.3% in average was demonstrated (37,400 fold signal enhancement at 4.7 T). The biological fate of ¹³C succinate, a normally occurring cellular intermediate, might be monitored with enhanced sensitivity.     

IPv4/IPv6的共存、过渡与寻址

本文从技术人员的角度对有关IP技术和IP网络的发展前景进行展望.当前的互联网正面临着从传统IPv4协议向IPv6协议的过渡,作者将着重分析过渡需求和主要的技术问题及其当前进展,以及遗留的其他课题.为了实现这一目标,还需要对互联网协议的历史、现状以及未解决的问题进行说明.     

微波医疗设备

微波技术可以在医疗诊断和治疗两方面发挥重种已经开发成功或者正在开发的新型微波医疗设备,这些设备是MMTC公司和下述公司共同开发的,她们是:在马里兰州哥伦比亚市制造微波气球导管的Celsion公司;在纽约州布朗克斯(Bronx)市制造微波气球导管、微波双天线和微波观测器件的Monte fiore医疗中心(MMC);研究共形阵列天线的加州大学旧金山分校(UCSF)。研究这些器件的单位以前都发表过文章和申请过专利,公开了这里所叙述的大部分材料。这里描述的所有器件都依赖于微波深深地透入活组织的能力。微波透入活组织的深度主要是活组织的介电特…     

Band gap uniformity and layer stability of HgTe-CdTe superlattices grown by photon-assisted molecular beam epitaxy

Two material properties important to the application of HgTe/CdTe superlattices for device fabrication are band gap uniformity and thermal stability. In this paper, we present the results of an infrared photoluminescence study of (211)B HgTe/CdTe superlattices grown by photon-assisted molecular beam epitaxy which show that cut-off wavelength uniformity can be controlled to a level commensurate with the demands of advanced infrared detector fabrication. Infrared photoluminescence and transmission electron microscopy were also employed to demonstrate that (211)B HgTe/CdTe superlattices are less prone to interdiffusion than previously believed.     

Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics

Various silicon surface cleaning processes for rapid thermal in-situ polysilicon/ oxide/silicon stacked gate structures have been evaluated. Metal-oxide-semiconductor capacitors were fabricated to assess the effects of cleaning on the quality of gate oxide structures produced by both rapid thermal oxidation (RTO) and rapid thermal chemical vapor deposition (RTCVD). Excellent electrical properties have been achieved for both RTO and RTCVD gate oxides formed on silicon wafers using either an ultraviole/zone (UV/O₃) treatment or a modified RCA clean. On the contrary, poor electrical properties have been observed for RTO and RTCVD gate oxides formed on silicon wafers using a high temperature bake in Ar, H₂, or high vacuum ambient. It has also been found that the electrical properties of the RTCVD gate oxides exhibit less dependence upon cleaning conditions than those of RTO gate oxides. This work demonstrates that initial surface condition prior to gate oxide formation plays an important role in determining the quality of RTO and RTCVD gate oxides.     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy

Excitonic resonances and the quantum confined Stark effect are observed near 1.3 mu m in InGaAs quantum wells grown on GaAs using a slowly graded InGaAs buffer. The pin structure performs as a modulator with a relative transmission modulation of 12% at 1.3 mu m and as a low leakage photodetector.<>     

A temperature-dependent model for the complex dielectric function of GaAs

In this work, we discuss a temperature-dependent model for the complex dielectric function for GaAs valid for the temperature range 31°C ≤ T ≤ 634°C. We describe our model, which is an extension of the critical point parabolic band method. This is a phenomenological method which is based on the physical processes occurring in the semiconductor, and has been previously demonstrated for composition-dependent models of the dielectric function for lattice-matched materials systems. We demonstrate the quality of the model in fitting optical data for individual temperatures, and compare our results to other established models. The data used for each fitting ranges from 1.25 to 4.5 eV. Using results obtained from the individual fits, we generate a temperature-dependent model that is valid for the range of temperatures given above. Also, we show how this model can be used to accurately determine the temperature (±2.3°C) of a material whose dielectric response has been obtained but was not included when generating the model.     

焊接的重要性

现在，电子制造行业必须满足无铅标准，并且已经取得了很大的进展，整个行业正在了解可靠的无铅方案。业内正在生产高性能无铅电路板，并且已经制订出无铅处理的新标准。本文重点介绍无铅焊接处理中的回流焊工艺考虑因素。[第一段]