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排序方式: 共有10000条查询结果,搜索用时 12 毫秒
91.
92.
93.
Chai-Chin Lin Chih-Ming Chen Jenn-Hwan Tarng Hsueh-Ming Hang Hsiao-Cheng Yu 《Broadcasting, IEEE Transactions on》2002,48(1):38-43
Field tests of the transmission performance of the ATSC DTV system have been conducted in Taiwan. The test results as well as comparisons against the NTSC system performance are reported and analyzed. From the measured results the reception characteristics of the DTV can be deduced and can provide guidelines for television stations to design the transmission system, schedule equipment deployment, plan service coverage areas, and improve the reception quality of the digital signal 相似文献
94.
Yu. Dzyadykevych O. Smiyan 《International Journal of Refractory Metals and Hard Materials》2007,25(5-6):361-366
The results of investigation of initial stage of the tantalum borating as well as the effect of oxygen and hydrogen on it are presented. The scheme of the initial stage of tantalum boron saturation is proposed. 相似文献
95.
V. A. Borodulya Yu. S. Teplitskii Yu. G. Epanov I. I. Markevich 《Journal of Engineering Physics and Thermophysics》1987,53(6):1393-1396
Experimental data was obtained on external heat transfer in infiltrated granular beds of coarse particles. It was determined that calcualtions with the proposed model agree satisfactorily with the experimental results.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 6, pp. 919–923, December, 1988. 相似文献
96.
97.
A method for measuring the characteristics of tunneling and impact ionization in thin-film electroluminescent emitters is suggested. This method makes it possible to find time dependences of the space-charge layer thickness near the anode and the length of the impact ionization region, to determine more exactly the time dependence of the field in the potential barrier at the cathode interface, the maximum depth of the surface states from which electron tunneling occurs, the minimum thickness of the barrier, and the electron tunneling probability, as well as the impact ionization rate for the deep centers related to structural defects of the phosphor layer. 相似文献
98.
Yu Yang Hugo Bender Kai Arstila Bart Swinnen Bert Verlinden Ingrid De Wolf 《Microelectronics Reliability》2008,48(8-9):1517-1520
Focused ion beam (FIB) and nano-probing were applied for failure analysis of three-dimensional stacked circuits with copper through-silicon-vias between the stacked chips. The failure analysis was done after high temperature storage and thermal cycling tests. Passive voltage contrast in FIB allowed to pinpoint the open sites. FIB cross-sections showed the presence of opens at the bottom of the copper vias. The failure cause was suspected to be an interlayer particle, which was confirmed by optical profilometry. Nano-probing was used on another sample to pinpoint the failure location through the measurement of the local resistance within the daisy chains. The failure was traced out to be related with surface contamination. 相似文献
99.
100.
D. D. Avrov S. I. Dorozhkin Yu. M. Tairov A. Yu. Fadeev A. O. Lebedev 《Semiconductors》2008,42(13):1469-1474
The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings. 相似文献