Conditional Data Mapping Flip-Flops for Low-Power and High-Performance Systems

This paper introduces a new family of low-power and high-performance flip-flops, namely conditional data mapping flip-flops (CDMFFs), which reduce their dynamic power by mapping their inputs to a configuration that eliminates redundant internal transitions. We present two CDMFFs, having differential and single-ended structures, respectively, and compare them to the state-of-the-art flip-flops. The results indicate that both CDMFFs have the best power-delay product in their groups, respectively. In the aspect of power dissipation, the single-ended and differential CDMFFs consume the least power at data activity less than 50%, and are 31% and 26% less power than the conditional capture flip-flops at 25% data activity, respectively. In the aspect of performance, CDMFFs achieve small data-to-output delays, comparable to those of the transmission-gate pulsed latch and the modified-sense-amplifier flip-flop. In the aspect of timing reliability, CDMFFs have the best internal race immunity among pulse-triggered flip-flops. A post-layout case study is demonstrated with comparison to a transmission-gate flip-flop. The results indicate the single-ended CDMFF has 34% less in data-to-output delay and 28% less in power at 25% data activity, in spite of the 34% increase in size     

Nanoporous Copper with Tunable Nanoporosity for SERS Applications

Nanostructured materials with designable microstructure and controllable physical and chemical properties are highly desired for practical applications in nanotechnology. In this article, it is reported that nanoporous copper with a tunable nanopore size can be fabricated by controlling the dealloying process. The influence of acid concentration and etching potential on the formation of nanoprosity is systematically investigated. With optimal etching conditions, the nanopore sizes can be tailored from ～15 to ～120 nm by controlling the dealloying time. It is found that the tunable nanoporosity leads to significant improvements in surface‐enhanced Raman scattering (SERS) of nanoporous copper and peak values of SERS enhancements for both rhodamine 6G and crystal violet 10B molecules are observed at a pore size of ～30–50 nm. This study underscores the effect of complex three‐dimensional nanostructures on physical and chemical properties and is helpful in developing inexpensive SERS substrates for sensitive instrumentations in molecular diagnostics.     

Extremely low noise InGaAs/InAlAs HEMT grown by MOCVD

MOCVD-grown InGaAs/InAlAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of approximately 15 dB at 12 GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.<>     

A floating-gate analog memory device for neural networks

A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-injection gate, it is possible to charge and discharge the MOSFET floating gate in order to modify the MOSFET current with high resolution over 10 b. The charge injection can be carried out without disturbing the MOSFET output current with high voltage control pulses. This device is useful for on-chip learning in analog neural network LSIs     

Comparison of the effect of a proteolytic enzyme dispase and a chelator for the preparation of epidermal sheet from nude mice.

Histochemical studies of epidermal Langerhans cells require well-preserved epidermal sheets. We studied the conditions for the preparation of the epidermal sheets from the skin of the ear, hind limb and trunk of nude mice. Two types of commercial dispase, and ethylenediaminetetraacetic acid (EDTA), were used at several concentrations and the effects were compared. Dermo-epidermal separation was evaluated by the preservation of ATPase activity of Langerhans cells in the epidermal sheet and by the ultrastructure of epidermal cells (Langerhans cells and keratinocytes) as well as epidermal-dermal junction. Good separation depended on the combination of the concentration of the reagent and site of the skin. The concentrations of both dispase and EDTA effective for separation of the epidermis in the nude mouse were lower than those in other mouse strains reported.     

Nano Molecular‐Platform: A Protocol to Write Energy Transmission Program Inside a Molecule for Bio‐Inspired Supramolecular Engineering

In a coded self‐assembly, a simple code is written in the molecule, which self‐assembles the molecules into a fractal like structure, which acts as a seed for the next step. As the molecule turns into a complex seed, the code transforms into another form and several seeds self‐assemble into another structure, which acts as a seed for the next step. Until now, this technology was considered as a prerogative of nature. Here, a dendritic network is used to write a basic code by synthetically attaching 32 molecular rotors and doping two controller molecules in its cavity. The code live, which is an energy transmission path in the molecule, is imaged. When the energy transmission path or code is triggered, a series of products generate one after another spontaneously. Two examples are: i) dendritic seed (5–6 nm)→paired nanowire (≈12 nm)→nanowire (≈200 nm)→microwire (500 nm)→wire like rod (1–2 μm)→jelly→rectangular sheet (5 μm). ii) dendritic seed→nano‐sphere (20 nm)→micro‐sphere (500 nm)→large balls(1 μm)→oval shape rod (5–10 μm)→Y, L or T shaped rod assembly. The energy level interactions are tracked using spectroscopy how exactly a directed energy transfer code generates multi‐step synthesis from nano to the visible scale.     

Monolithic rat-race mixers for millimeter waves

In this paper, we report on fully monolithic millimeter-wave Schottky-barrier diode (SBD) down-converters with an IF amplifier using heterojunction bipolar transistors (HBT's). A rat-race circuit is used for the mixer, and is analyzed using a harmonic-balance simulator. The measured conversion gain and the isolation are 7.1 and 29 dB in the V-band design, and 8.0 and 25 dB in the W-band design, respectively. The conversion gains are matched well with the circuit simulation     

MBE growth and properties of ZnO on sapphire and SiC substrates

Molecular beam epitaxy (MBE) of ZnO on both sapphire and SiC substrates has been demonstrated. ZnO was used as a buffer layer for the epitaxial growth of GaN. ZnO is a würtzite crystal with a close lattice match (<2% mismatch) to GaN, an energy gap of 3.3 eV at room temperature, a low predicted conduction band offset to both GaN and SiC, and high electron conductivity. ZnO is relatively soft compared to the nitride semiconductors and is expected to act as a compliant buffer layer. Inductively coupled radio frequency plasma sources were used to generate active beams of nitrogen and oxygen for MBE growth. Characterization of the oxygen plasma by optical emission spectroscopy clearly indicated significant dissociation of O₂ into atomic oxygen. Reflected high energy electron diffraction (RHEED) of the ZnO growth surface showed a two-dimensional growth. ZnO layers had n-type carrier concentration of 9 × 10¹⁸ cm⁻³ with an electron mobility of 260 cm²/V-s. Initial I-V measurements displayed ohmic behavior across the SiC/ZnO and the ZnO/GaN heterointerfaces. RHEED of GaN growth by MBE on the ZnO buffer layers also exhibited a two-dimensional growth. We have demonstrated the viability of using ZnO as a buffer layer for the MBE growth of GaN.     

Automated detection of pulmonary nodules in helical CT images based on an improved template-matching technique

The purpose of this study is to develop a technique for computer-aided diagnosis (CAD) systems to detect lung nodules in helical X-ray pulmonary computed tomography CT) images. We propose a novel template-matching technique based on a genetic algorithm (GA) template matching (GATM) for detecting nodules existing within the lung area; the GA was used to determine the target position in the observed image efficiently and to select an adequate template image from several reference patterns for quick template matching. In addition, a conventional template matching was employed to detect nodules existing on the lung wall area, lung wall template matching (LWTM), where semicircular models were used as reference patterns; the semicircular models were rotated according to the angle of the target point on the contour of the lung wall. After initial detecting candidates using the two template-matching methods, we extracted a total of 13 feature values and used them to eliminate false-positive findings. Twenty clinical cases involving a total of 557 sectional images were used in this study. 71 nodules out of 98 were correctly detected by our scheme (i.e., a detection rate of about 72%), with the number of false positives at approximately 1.1/sectional image. Our present results show that our scheme can be regarded as a technique for CAD systems to detect nodules in helical CT pulmonary images.     

DC to 10-GHz mixer and amplifier GaAs IC's for coherent opticalheterodyne receiver

The authors describe a number of design techniques that are effective for enhancing sensitivity and bandwidth. A Gilbert-cell circuit with a single-to-balance conversion input buffer and a peaking circuit are adopted for the mixer. In addition, a wideband amplifier is proposed that adopts a novel multiple-feedback cascode FET amplifier configuration with an LC input matching network. Finally, a novel interconnection technique is proposed that improves impedance matching between ICs and the package over a wide frequency range up to 10 GHz. These ICs were fabricated using a 0.2-μm gate self-aligned GaAs MESFET process. These techniques could enable a highly sensitive multigigabit-per-second coherent optical heterodyne receiver to be implemented