The 100 G capturing robot - too fast to see

This paper discusses the capturing robot with the maximum acceleration of 100 G in design specification. We aim find the combination of the arm with a mass of 0.1 kg and the spring capable of producing the initial compressed force of 100 N, in order to achieve the 100 G. To reduce the total capturing time, we propose an arm/gripper coupling mechanism where the spring energy initially accumulated in the arm is transferred to the kinetic energy of the arm and continuously to the kinetic energy for closing the gripper at the capturing point without any time lag. The experimental results show the maximum acceleration of 91 G and the capturing time of 25 ms were achieved. Experiments on capturing a dropping ball were also executed with the assistance of the 1 ms-vision.     

Athermal silica-based arrayed-waveguide grating multiplexer

A temperature dependent channel wavelength shift in a silica-based arrayed-waveguide grating multiplexer is successfully suppressed from 0.95 to 0.05 nm in the 0-85°C temperature range, which means that it can be used in practical WDM systems without the need for temperature control     

Technology choice and CDM projects in China: case study of a small steel company in Shandong Province

Corporate motives and strategies of both investing and hosting country affect the outcomes of a clean development mechanism (CDM) project—who introduces what technology to whom—and result in large differences in economic viability and the CO₂ emission reductions. This is particularly true for steel industry in which steel making consists of many detailed and complex processes, a given strategy could produce cumulative effects of the individual technologies used, leading to large energy savings overall. The objective of this study is to demonstrate some analytical methods that can be used to quantitatively evaluate the impacts of technology selection on the profit performance of CDM projects. Specifically, in this study we analyze a CDM project to introduce energy saving technology from Japan to a small steel manufacturer in China's Shandong Province, and conduct a simulation of the quantitative relationships between various technology options and profitability. Based on these results, we examine the environmental and economic significance of technology selection for CDM projects. To take this further, we then reconsider the profitability of a project as typical FDI activity (i.e., without the CDM), and by comparing this outcome with the CDM case, we clarify the significance and potential of the CDM.     

Features of Rotating Stall Cell in a Diagonal Flow Fan（in Case of Mid-loading Rotor）

The structure and behavior of rotating stall cell were experimentally clarified in a diagonal flow fan. The specific-speed of the fan was 1140 (r/min, m3/min, m), and the total pressure-rise coefficient at design flow-rate was 0.345. The static pressure on outer casing wall and the total pressure at rotor inlet and outlet were measured using a high response pressure transducer. The measured data were processed by the use of DPLA technique, and the structure and behavior of rotating stall cell were obtained. As a result, the stall cell extent for circumferential and spanwise direction and the pressure distributions inside stall cell were clarified. The details of stall cell propagation were also shown.     

1.5%-/spl Delta/ athermal arrayed-waveguide grating multi/demultiplexer with very low loss groove design

We describe a compact 1.5%-/spl Delta/ athermal silica-based 100-GHz-spacing 16-channel arrayed-waveguide grating (AWG) multi/demultiplexer with a modified groove design for a very low excess loss. We propose new approaches for modifying the shape of the grooves and the arrayed waveguides and optimize the shape modifications for 1.5%-/spl Delta/ waveguides. By employing this modified groove design, we greatly reduced the groove excess loss from 1.9 to 0.4 dB in the 1.5%-/spl Delta/ athermal AWG.     

Extremely low-loss 1.5%-/spl Delta/ 32-channel athermal arrayed-waveguide grating multi/demultiplexer

A silica-based 1.5%-/spl Delta/ 100 GHz-spacing 32-channel athermal arrayed-waveguide grating (AWG) with compact size and extremely low insertion loss is described. By reducing the fibre coupling loss and the excess loss in a silicone-filled groove, an insertion loss of 1.3 dB was achieved with this athermal AWG.     

Pentacene/n-Si heterojunction diodes and photovoltaic devices investigated by I-V and C-V measurements

The forward and reverse current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of pentacene/n⁻-silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. Current rectification characteristics of the pentacene/n⁻-Si junctions can be explained by a Schottky diode model with an interfacial layer. The diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.79-1.0 eV and 2.4-2.7, respectively. The C-V analysis suggests that the depletion layer appears selectively in the n⁻-Si layer with a thickness of 1.47 μm from the junction with zero bias and the diffusion potential was estimated at 0.30 eV at the open-circuit condition. The present heterojunction allows the photovoltaic operation with power conversion efficiencies up to 0.044% with a simulated solar light exposure of 100 mW/cm².     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively     

Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier

We investigated the current/voltage characteristics of n+GaAs/undoped AlxGa1?xAs (200 A)/n+GaAs heterostructures grown by the metalorganic chemical vapour deposition (MOCVD) method between 77 K and 300 K. Both the voltage dependence and the temperature dependence of the current were in good agreement over a wide current range with the calculated results of the tunnelling and thermionic emission current.