首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   287783篇
  免费   3070篇
  国内免费   816篇
电工技术   5033篇
综合类   162篇
化学工业   45430篇
金属工艺   11897篇
机械仪表   8608篇
建筑科学   6849篇
矿业工程   1837篇
能源动力   6736篇
轻工业   25928篇
水利工程   3191篇
石油天然气   7088篇
武器工业   16篇
无线电   31473篇
一般工业技术   56947篇
冶金工业   51431篇
原子能技术   7532篇
自动化技术   21511篇
  2021年   2101篇
  2018年   3677篇
  2017年   3625篇
  2016年   3910篇
  2015年   2467篇
  2014年   4232篇
  2013年   12030篇
  2012年   6832篇
  2011年   9218篇
  2010年   7572篇
  2009年   8649篇
  2008年   8938篇
  2007年   8819篇
  2006年   7828篇
  2005年   7315篇
  2004年   6804篇
  2003年   6560篇
  2002年   6627篇
  2001年   6499篇
  2000年   6182篇
  1999年   6235篇
  1998年   14771篇
  1997年   11049篇
  1996年   8579篇
  1995年   6530篇
  1994年   5922篇
  1993年   5792篇
  1992年   4480篇
  1991年   4441篇
  1990年   4284篇
  1989年   4302篇
  1988年   4257篇
  1987年   3599篇
  1986年   3596篇
  1985年   4163篇
  1984年   3965篇
  1983年   3621篇
  1982年   3425篇
  1981年   3558篇
  1980年   3423篇
  1979年   3365篇
  1978年   3445篇
  1977年   3923篇
  1976年   5039篇
  1975年   3158篇
  1974年   3009篇
  1973年   3024篇
  1972年   2651篇
  1971年   2473篇
  1970年   2104篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
Advances in the synthesis of organic conducting polymer systems has increased the electrical conductivity of these systems by several orders of magnitude in the last decade. Several practical applications are envisioned for such systems, but a thorough understanding of the conduction mechanisms and identification of the charge carriers is lacking, making design and implementation for bulk synthesis difficult. In order to clarify our understanding of the electrical properties of these systems, the resistivity and magnetoresistivity of various polymers doped near the metal - insulator transition, such as polyaniline protonated by camphor sulfonic acid (PANi-CSA) and polypyrrole doped with PF6 (PPy-PF6), have been studied down to 25 mK in magnetic fields up to 16 T.  相似文献   
992.
The piezoelectric ceramic (piezoceramic) component of a polymer-piezoelectric ceramic composite converts mechanical energy into electrical energy and this electrical energy is dissipated as heat in a load resistance, R x, simulated by a shunted resistance, but provided in practice by a conductive polymer composite matrix. The composite therefore dissipates the input mechanical energy via the damping mechanism provided by piezoelectric ceramic-conductive matrix material, as well as the conventional viscoelastic damping provided by the polymer. Mathematical models have been developed to characterize the damping behaviour of the composites, and the maximum damping ratio of composites can be as high as 23%. A two degrees-of-freedom (2DOF) experimental setup was developed to test the validity of the models. The experimental results are in good agreement with the theoretical predictions.  相似文献   
993.
The influence of longitudinal mode spatial hole burning (LMSHB) on the performance of distributed feedback (DFB) laser structures is examined in detail. A comprehensive model has been used to interpret the experimental results and to construct a theoretical framework that was utilized to develop more advanced device designs. An increasing side mode intensity with output power, movement of the lasing mode relative to the stopband, and curvature of the light-current characteristic at low power can all be manifestations of the influence of LMSHB on the static device performance. The dynamic behavior can also be affected, with extended wavelength chirp and amplitude patterning effects on the timescale of the effective carrier recombination time being particularly important  相似文献   
994.
A protocol for primed in situ DNA labeling (PRINS) was optimized for pea (Pisum sativum L.) and field bean (Vicia faba L.) chromosomes attached to coverslips. Cloned DNA or synthetic oligonucleotides were used as probes for repetitive DNA sequences (rDNA, Fok-element) and different reaction conditions were tested to achieve the highest specific signal-to-background ratio. A procedure based on direct labeling by fluorescein-dUTP was compared with an indirect one using digoxigenin detected by fluorescently labeled antibody. Under optimal conditions, strong and specific signals were obtained exclusively on chromosome regions known to contain respective DNA sequences. Compared to the direct labeling, significantly stronger signals were obtained when the indirect procedure was used. Both types of labeling were successfully applied to chromosomes in suspension and were shown to produce signals comparable to that obtained with chromosomes attached to coverslips. It is expected that primed in situ DNA labeling en suspension (PRINSES) will provide a basis for flow-cytometric discrimination and sorting of otherwise indistinguishable chromosomes according to their specific fluorescent labeling.  相似文献   
995.
996.
It is generally thought that, when a material is in its brittle to ductile transition, it is more difficult to design for crack arrest than to prevent crack initiation (cleavage). This report shows that this is not always true for weldments. Comparison is made between compact crack arrest (CCA), Ka, and crack tip opening displacement (CTOD), KJc, toughness for the same HY80 weld. The value of Ka is shown to be much higher than the minimum KJc for pop-in fracture initiation. It is considered that the results support the conclusion of Japanese research workers (Arimochi and Isaka) that small pop-ins (in the CTOD test) propagate and arrest without load drop. It follows that prediction of structural failure for weldments need not be based on minimum pop-in toughness from CTOD tests.  相似文献   
997.
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (fT) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region  相似文献   
998.
Fault tolerance in VLSI/WSI FFT arrays acquires relevance when defects and run-time faults become significant, due to large dimensions of processors and arrays. Then, both restructuring to overcome end-of-production defects and reconfiguration to overcome run-time faults are required, to achieve the dual purposes of higher yield and higher reliability.Adopting as basic FFT network the two-dimensions array that directly corresponds to the FFT flow graph, the usual structure redundancy techniques tailored for two-dimensions arrays reconfiguration are not well applicable, since the limited locality of this network leads to relevant area increase due to the augmented interconnection structure.In this paper,time redundancy is suggested as a viable alternative for the two-dimensions FFT array; two different solutions are presented, one based oninter-stage reconfiguration, the other one adoptingintra-state reconfiguration, both allowing for survival to multiple faults with limited increase of network complexity and very small hard-core sections. As usual in many time redundancy methods, both approaches result in a processing speed equal to half the processing speed granted by an ideal, fault-free device.Reliability and survival ratios to multiple faults are evaluated for the two cases, taking into account also the area increments necessary for fault tolerance. The reliability evaluations allow for a direct comparison of the two solutions.  相似文献   
999.
1000.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号