Filled Fibrous Sorbents Modified with Transition Metal Ferro- and Ferricyanides for Recovery of Americium and Rare-Earth Metals

Filled fibrous sorbents modified with transition metal ferro- and ferricyanides capable to recover americium(III) and rare-earth metals(III) from nitric acid solutions were prepared. The most complete and rapid recovery is attained on complex-forming and cation-exchange sorbents (as filled fibrous materials) saturated with nickel ions. The sorbents are characterized by good kinetic properties and can be used for recovery of the above metals.     

Highly resistant dispensing nozzles based on zirconium dioxide for profiled CBCM. Part 1. Structure and physicomechanical properties of materials based on zirconium dioxide for producing CBCM dispensing nozzles

Technology is developed for preparing refractory components made of partially stabilized zirconium dioxide using an isostatic compaction press. Technology is provided for manufacturing dispensing nozzles using combined and separately stabilized zirconium dioxide, and also indices of the refractories obtained and imported materials are compared. __________ Translated from Novye Ogneupory, No. 3, pp. 127–131, March 2008.     

Dynamic modes of Ti combustion in a coflow of N<Subscript>2</Subscript>-Ar mixture

Combustion of bulk density Ti powder (containing 20 wt % TiN as a diluent) in a coflow of N₂-Ar mixture was investigated upon variation in the nitrogen content of the gaseous mixture. The obtained data are believed to open up new horizons for fabrication of layered and composite ceramics by infiltration-mediated combustion.      

Noise–Power Optimization of Incremental Data Converters

Incremental data converters (IDCs) are useful in instrumentation and measurement applications, where low-frequency analog signals need to be converted into digital form with high accuracy and low power dissipation. They are particularly well suited for applications where a single analog-digital converter is multiplexed between many channels. This paper proposes an exact design methodology for IDCs, which optimizes the signal-to-noise ratio of the converter under practical design constraints. The process also allows the designer to apportion the noise budget in an arbitrary manner between thermal and quantization noise. The design process is illustrated by an example which describes the optimization of a third-order multiplexed IDC.     

Cost-Efficient SHA Hardware Accelerators

This paper presents a new set of techniques for hardware implementations of Secure Hash Algorithm (SHA) hash functions. These techniques consist mostly in operation rescheduling and hardware reutilization, therefore, significantly decreasing the critical path and required area. Throughputs from 1.3 Gbit/s to 1.8 Gbit/s were obtained for the SHA implementations on a Xilinx VIRTEX II Pro. Compared to commercial cores and previously published research, these figures correspond to an improvement in throughput/slice in the range of 29% to 59% for SHA-1 and 54% to 100% for SHA-2. Experimental results on hybrid hardware/software implementations of the SHA cores, have shown speedups up to 150 times for the proposed cores, compared to pure software implementations.      

Bistable amphoteric centers in semiconductors

It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U ^? centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.