电容传感器在使用中存在的几个问题及处理方法

随着电容测量技术的迅速发展，电容传感器在非电量测量和自动检测中得到广泛应用，但它在使用过程中也存在一些问题，针对在使用电容传感器过程中存在的几个问题，从电容传感器的原理和工作过程两个方面进行了讨论，并提出行之有效的处理方法。     

An experimental study of an optical burst switching network based on wavelength-selective optical switches

In this article we report the system structure and test results of an experimental optical burst switching network with three edge router's and one core node. Wavelength-selective switches developed for this system and their characteristics are depicted. The implementation and performance of our new scheme for the just-in-time protocol are described. We also report experimental results of FTP and VOD services on this system. Some parameters, including traffic rate, average burst data length, and assembly time, are studied.     

Host/guest complex of Me-β-CD/2,2-dimethoxy-2-phenyl acetophenone for initiation of aqueous photopolymerization: Kinetics and mechanism

Methylated-β-cyclodextrin (Me-β-CD) was used to complex the photoinitiator, 2,2-dimethoxy-2-phenyl acetophenone (DMPA), yielding a water-soluble host/guest complex. The comparative studies demonstrated that the Me-β-CD complexed DMPA exhibited a high photoreactivity identical to the uncomplexed DMPA, while the CD complex obviously influenced the products of primary photolysis of DMPA and the photopolymerization kinetics due to the steric effect of CD on the subsequent initiation reactions. The photopolymerization rate of acrylamide can be described by the equation: R_p=K[2a]^0.62[M]^1.37[I]^0.5[Me-β-CD]⁰. The mechanism of polymerization was also discussed.     

Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established.     

成型鼓的软极限保护

通过修改工艺配方,自动完成对成型鼓鼓肩位置极限的设定,并且该软极限的大小根据工艺参数的不同可以自动调整,最终达到了对成型鼓的保护,实际使用效果好.     

Stress analysis of spontaneous Sn whisker growth

Spontaneous Sn whisker growth is a surface relief phenomenon of creep, driven by a compressive stress gradient. No externally applied stress is required for the growth, and the compressive stress is generated within, from the chemical reaction between Sn and Cu to form the intermetallic compound Cu₆Sn₅ at room temperature. To obtain the compressive stress gradient, a break of the protective oxide on the Sn surface is required because the free surface of the break is stress-free. Thus, spontaneous Sn whisker growth is unique that stress relaxation accompanies stress generation. One of the whisker challenging issues in understanding and in finding effective methods to prevent spontaneous Sn whisker growth is to develop accelerated tests of whisker growth. Use of electromigration on short Sn stripes can facilitate this. The stress distribution around the vicinity and the root of a whisker can be obtained by using the micro-beam X-ray diffraction utilizing synchrotron radiation. A discussion of how to prevent spontaneous Sn whisker growth by blocking both stress generation and stress relaxation is given.