Fatigue life estimation of FBGA memory device under vibration

This paper predicts the fatigue life of fine-pitch ball grid array (FBGA) solder joints in memory devices due to harmonic excitation through experiments and finite element analysis. Finite element models of the memory device with simplified solder joints and with detailed solder joints were developed as a global model and a local model, respectively. A global-local modeling technique was used in the finite element simulation to calculate the stress magnitude of solder joints in the memory device under vibration. Stress versus life (S-N) curve was generated for the memory devices under various vibration levels to derive the fatigue constants of solder material. The fatigue life of the memory device was then determined by using the Basquin equation and Miner’s rule. It was experimentally verified that the predicted fatigue life of the memory device under cumulative damage conditions matches the experimental results within reasonable accuracy.     

Gradient Type-II CdSe/CdSeTe/CdTe Core/Crown/Crown Heteronanoplatelets with Asymmetric Shape and Disproportional Excitonic Properties

Characterized by their strong 1D confinement and long-lifetime red-shifted emission spectra, colloidal nanoplatelets (NPLs) with type-II electronic structure provide an exciting ground to design complex heterostructures with remarkable properties. This work demonstrates the synthesis and optical characterization of CdSe/CdSeTe/CdTe core/crown/crown NPLs having a step-wise gradient electronic structure and disproportional wavefunction distribution, in which the excitonic properties of the electron and hole can be finely tuned through adjusting the geometry of the intermediate crown. The first crown with staggered configuration gives rise to a series of direct and indirect transition channels that activation/deactivation of each channel is possible through wavefunction engineering. Moreover, these NPLs allow for switching between active channels with temperature, where lattice contraction directly affects the electron–hole (e–h) overlap. Dominated by the indirect transition channels over direct transitions, the lifetime of the NPLs starts to increase at 9 K, indicative of low dark-bright exciton splitting energy. The charge transfer states from the two type-II interfaces promote a large number of indirect transitions, which effectively increase the absorption of low-energy photons critical for nonlinear properties. As a result, these NPLs demonstrate exceptionally high two-photon absorption cross-sections with the highest value of 12.9 × 10⁶ GM and superlinear behavior.