Theoretical Strength of Borides and Quasibinary Boride Eutectics at High Temperatures

Powder Metallurgy and Metal Ceramics - The theoretical strength of LaB6 and MeB2 borides and a eutectic LaB6–TiB2 system is calculated with quasiharmonic approximation for uniaxial strain in...     

Viscosity of Fe90B x Si(10 − x) melts

High Temperature - The temperature dependences of the viscosity of liquid Fe90B x Si(10 − x) alloys are studied in the mode of heating and subsequent cooling. The temperature dependences of...     

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented.