System reliability estimation using simulation combined with network reductions

This paper proposes a dynamic Monte Carlo sampling method, called the conditional minimal cut set (COMICS) algorithm, where all arcs are not simulated at each trial and all minimal cut sets need not be given in advance. The proposed algorithm repeats simulating a minimal cut set composed of the arcs which originate from the (new) source node and reducing the network on the basis of the states of simulated arcs until the s-t connectedness is confirmed. We develop the importance sampling estimator, the total hazard estimator and the hazard importance sampling estimator which are all based on the proposed algorithm, and compare the performance of these simulation estimators. It is found that these estimators can significantly reduce the variance of the raw simulation estimator and the usual importance sampling estimator.     

粉末材料中微夹杂缺陷的超声波检验

介绍了用超声波方法检测微夹杂缺陷的一些试验结果，比较了不同频率、不同试验方法检测能力的差异，并通过解剖试验对检出缺陷的性质、尺寸作了比较。     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

塑料薄膜透气测试装置及测试方法研究

根据塑料薄膜透气原理，设计了一种简易薄膜透气测试装置，并对测试方法及结果处理进行了探讨。     

具有再生反馈雷达的角跟踪性能闭环测试

本文论述了用雷达跟踪目标最大角速度和角加速表征具有再生反馈雷达角跟踪性能的合理性,并论述了用单片机测试雷达跟踪目标最大角速度和最大角加速的方法。     

蒙特卡罗方法在空间辐射制冷器理论分析及热设计计算中的应用

介绍了二级抛物面型辐射制冷器的热物理模型及用蒙特卡罗方法数值模拟解决其热流理论和辐射热耦合表面（漫发射、镜反射）辐射热交换的处理方法。     

The crystal structure of an Fe-superoxide dismutase from the hyperthermophile Aquifex pyrophilus at 1.9 A resolution: structural basis for thermostability

The incidence of stress fractures is increasing among competitive and recreational athletes as well as among children and the elderly. By understanding the continuum of bone's response to stress and maintaining an appropriate index of suspicion, the health care provider can diagnose these injuries appropriately. An accurate history and examination is essential and will differentiate stress fractures from other stress reactions. The more common stress fractures are discussed.     

PC／PET共混物的非等温结晶动力学

采用等速变温ＤＳＣ法对ＰＣ／ＰＥＴ共混体系的非等温结晶动力学进行了研究，结果表明，从玻璃态结晶时，随着ＰＣ含量的增加，ＰＥＴ组分的结晶速率先增加后降低。耐从熔体结晶时，体系的结晶速率随着ＰＣ含量的增加而增加，讨论了ＰＣ对ＰＥＴ组分结晶过程的影响。     

抗高温磨损高铬铸铁的研究

经Mo、B、V、Ti合金化和RE变质处理的高铬铸铁，具有优良的抗高温磨损性能和强韧性，用于制造筛分高温烧结矿的振动筛筛板，使用寿命比ZG30Cr18Mn12Si2N耐热钢筛板提高2倍以上。多元高铬铸铁筛板制造工艺简单，成本低，值得在筛分领域推广使用。     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained