Comparison of Hydrometallurgical Parameters of N,N‐Dialkylamides and of Tri‐n‐Butylphosphate

Straight‐chain N,N‐dihexyloctanamide (DHOA) and branched‐chain N,N‐di(2‐ethylhexyl)isobutyramide (D2EHIBA) have been identified as promising alternatives to tri‐n‐butylphosphate (TBP) for the reprocessing of spent uranium based fuels, and selective extraction of ²³³U from irradiated thorium fuels, respectively. The present work deals with the effects of different hydrodynamic parameters such as viscosity, density, and interfacial tension (IFT) on the phase‐separation time (PST) under uranium and thorium loading conditions. The IFT values have been determined under varying experimental conditions such as the aqueous nitric acid concentration, n‐dodecane purity, ligand concentration, and thorium/uranium loading conditions. These studies have suggested that the quality of n‐dodecane affects the IFT values of different solutions. The IFT values of D2EHIBA changed marginally (23.3 ± 0.9 mNm^?1) against THOREX feed solution for the wide range of D2EHIBA concentration (0.1–1.0 M). However, IFT, viscosity, and PST values increased with uranium loading of 1.1 M DHOA. These studies suggested that a lower phase‐disengagement rate with increased uranium loading was mainly due to the increased viscosity of the loaded 1.1 M DHOA solution.     

Exceptionally High Dielectric Constant in Ceramic Pr2CuO4

The pristine layered cuprate Pr₂CuO₄ samples of >95% density were fabricated as thin disks. The samples, analyzed by X‐ray diffraction and Scanning electron microscopy, showed clean T′‐type phase with Rietveld refined lattice parameters a = b = 3.95805(±5) Å and c = 12.2262(±5) Å. The measured dielectric properties of the Pr₂CuO₄ ceramics, in the temperature range ?100°C–150°C and frequencies (ν) 0.1 Hz–1 MHz, showed extremely high ε_r′ > 10⁴ (above ?30°C), and dissipation (tan δ = ε_r′′/ε_r′) between 0.1 and 5 (for 500 Hz ≤ ν ≤ 1 MHz, and ?100 ≤ T ≤ 150°C). The ac conductivity of Pr₂CuO₄ ceramics ranged between 10^?6 and 10^?3 Scm^?1 for the measured frequencies and temperatures, and showed frequency‐dependent double power law behavior akin to a modified Jonscher's power law.     

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx,GdOx, HfOx,and TaOx switching materials

Improved switching characteristics were obtained from high-κ oxides AlO_x, GdO_x, HfO_x, and TaO_x in IrO_x/high-κ_x/W structures because of a layer that formed at the IrO_x/high-κ_x interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled ‘SET/RESET’ current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrO_x/high-κ_x interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrO_x/AlO_x/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>10⁵ cycles), and data retention of >10⁴ s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.     

Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

The resistive switching memory of Ge nanowires (NWs) in an IrO_x/Al₂O₃/Ge NWs/SiO₂/p-Si structure is investigated. Ge NWs with an average diameter of approximately 100 nm are grown by the vapor–liquid-solid technique. The core-shell structure of the Ge/GeO_x NWs is confirmed by both scanning electron microscopy and high-resolution transmission electron microscopy. Defects in the Ge/GeO_x NWs are observed by X-ray photoelectron spectroscopy. Broad photoluminescence spectra from 10 to 300 K are observed because of defects in the Ge/GeO_x NWs, which are also useful for nanoscale resistive switching memory. The resistive switching mechanism in an IrO_x/GeO_x/W structure involves migration of oxygen ions under external bias, which is also confirmed by real-time observation of the surface of the device. The porous IrO_x top electrode readily allows the evolved O₂ gas to escape from the device. The annealed device has a low operating voltage (<4 V), low RESET current (approximately 22 μA), large resistance ratio (>10³), long pulse read endurance of >10⁵ cycles, and good data retention of >10⁴ s. Its performance is better than that of the as-deposited device because the GeO_x film in the annealed device contains more oxygen vacancies. Under SET operation, Ge/GeO_x nanofilaments (or NWs) form in the GeO_x film. The diameter of the conducting nanofilament is approximately 40 nm, which is calculated using a new method.     

Bubble columns for condensation at high concentrations of noncondensable gas: Heat‐transfer model and experiments

Carrier gas based thermodynamic cycles are common in water desalination applications. These cycles often require condensation of water vapor out of the carrier gas stream. As the carrier gas is most likely a noncondensable gas present in very high concentrations (60–95%), a large additional resistance to heat transfer is present. It is proposed to reduce the aforementioned thermal resistance by condensing the vapor–gas mixture in a column of cold liquid rather than on a cold surface using a bubble column heat exchanger. A theoretical predictive model for estimating the heat‐transfer rates and new experimental data to validate this model are described. The model is purely physics based without the need for any adjustable parameters, and it is shown to predict heat rates within 0 to ?20% of the experimental values. The experiments demonstrate that heat‐transfer rates in the proposed device are up to an order magnitude higher than those achieved in existing state‐of‐the‐art dehumidifiers. © 2012 American Institute of Chemical Engineers AIChE J, 59: 1780–1790, 2013     

Targeting and design of water networks for fixed flowrate and fixed contaminant load operations

Water-using processes are typically modeled as either fixed flowrate operations or fixed contaminant load operations. A new method for targeting the minimum freshwater and pinch in a single-contaminant water network is proposed, which can be applied to both kinds of operations. The method consists of plotting separate source and demand composites with flowrate as the horizontal axis and contaminant load unusually as the vertical axis. It is elegant, non-iterative, and can handle hybrid problems where both kinds of operations coexist.To design minimum freshwater networks for fixed flowrate problems, an algorithm is presented based on a newly developed principle of nearest neighbors. The principle simply states that the source streams to be chosen to satisfy a particular water demand must be the nearest available neighbors in terms of contaminant concentration.To design minimum freshwater networks for fixed contaminant load problems, the nearest neighbors algorithm is applied to process units that lie across the pinch. Units that lie entirely on one side of the pinch are satisfied by the cleanest source available on that side of the pinch. In other words, below-pinch units are satisfied by freshwater and above-pinch units are satisfied by the cleanest available stream above the pinch. Designs based on this methodology, apart from meeting the minimum freshwater target, also minimize the water flowing through the process units resulting in reduced network capital cost.     

Metal hollow sphere electrocatalysts

Metal micro-/nano hollow spheres have been widely applied in numerous fields during the last decade. This review will only focus on the synthetic strategies to synthesize hollow spherical structures in the enhancement of their electrocatalytic activity, especially the metal hollow spherical materials. We present a comprehensive overview of synthetic strategies for metal hollow spherical structures which have been approached specifically in electrochemical reactions. These synthetic methods are mainly categorized as hard templates, soft templates, sacrificial templates and without templates. The review further includes electrocatalytic approaches of hollow spherical metals in different electrochemical processes, especially the methanol electro-oxidation reaction for methanol fuel cell application and hydrogen and oxygen evolution reactions in water electrolyzer, as metal hollow spherical materials are especially applied in these specific reactions.     

A Novel RFET Sensor for Label-Free Biomolecule Detection

Silicon - In the current scenario, COVID-19 has created a havoc negative impact on the lives of the people, which have triggered the research interest on the design and development of sensitive,...     

Easy Access to 1‐Amino and 1‐Carbon Substituted Isoquinolines via Cobalt‐Catalyzed C?H/N?O Bond Activation

A green atom‐economical method for the synthesis of highly functionalized 1‐amino and 1‐carbon substituted isoquinolines from the reaction of N′‐hydroxybenzimidamides and aryl ketoximes, respectively, with alkynes via pentamethylcyclopentadienylcobalt(III)‐catalyzed C H/N O bond activation is described. The external oxidant‐free annulation reaction uses the =NOH moiety in N′‐hydroxybenzimidamides or N‐aromatic ketone oximes as the directing group and internal oxidant. This first row transition metal‐catalyzed annulation serves as an efficient alternative for the synthesis of isoquinolines, as water is the only by‐product and expensive noble metals such as rhodium(III), iridium(III), palladium(II), and ruthenium(II) are not required. The reaction proceeds via C H activation, alkyne insertion, reductive elimination, and N O activation.