纳米氧化铝的制备及应用

介绍了高科技产品纳米氧化铝的 3大制备方法 :固相法、气相法、液相法的优缺点 ,以及纳米氧化铝的应用与发展前景     

电容位移法精确测量磁性薄膜的磁致伸缩系数

介绍了一种精确测量磁性薄膜磁致伸缩系数方法－电容位移法，并自行研制组装了一套测量装置，通过误差分析，仪器的精确标定，对稀土－铁超磁致伸缩薄膜的磁致伸缩系数进行了测量，获得满意的结果。     

Minimum switching control for adaptive tracking

The switching adaptive control method has been used for quite a few years to solve the adaptive stabilization and model reference adaptive control problems. However, a serious problem with the switching control method is that the number of ‘candidate’ controllers can potentially be very large, especially for multi‐input–multi‐output systems. In this paper, we consider a class of minimum‐phase multi‐input–multi‐output plants with some mild compactness assumptions. Given any polynomial reference input, we provide a switching control law which guarantees exponentially stability of the closed‐loop system with exponential tracking performance. The main contribution of the paper is that we give the minimum number of candidate controllers required for switching. In particular, the number is equal to 2 for single‐input–single‐output plants (one for each sign of the high‐frequency gain), and is equal to 2^m for m‐input–m‐output plants. That is, the number is independent of the degree and the relative degree of the plant. Copyright © 2006 John Wiley & Sons, Ltd.     

用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

四方向上的任意角度扇形数字滤波器的设计

具有任意角度（扇形所围成的角度）和任意方向（扇形所取方向）的扇形数字滤波器在图像数据压缩和地质、地震等方面的数据处理中有着广泛的应用。目前，大多数的工作多集中于水平及垂直方向的９０°扇形数字滤波器的设计，因而有必要研究任意方向上的任意角度的扇形数字滤波器的设计。本文介绍利用ＭｃＣｌｅｌｌａｎ交换法设计具有垂直，水平及±４５°方向上的任意角度的扇形数字滤波器的设计方法，垂直水平方向上的扇形滤波器的设     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

连续挤压法介绍

连续挤压法的特点是：挤压所需的压力是借助一个回转的摩擦轮来实现的。摩擦轮的轮缘上设有一个凹槽，其断面取决于原坯的断面（线材坯料）。本文将就这种工艺的设备和有关铝材生产阶段中的一些问题作一简介。     

局部施肥对植株生长及根系形态的影响

本文论述了局部施肥对植株地上部与地下部的影响。局部施肥促进了施肥区根系的发达 ,第一侧根与第二侧根较多 ,根的吸收表面积增多 ,根鲜重增加 ,对养分的吸收能力增强 ,但整个根系与地上部的干鲜重下降。     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².