建筑陶瓷企业实施精益生产研究

分析了建筑陶瓷企业实施精益生产的条件和当前推行精益生产的主要障碍，对应用中存在的问题进行了分析并提出了相关建议。     

Efficient Legendre moment computation for grey level images

Legendre orthogonal moments have been widely used in the field of image analysis. Because their computation by a direct method is very time expensive, recent efforts have been devoted to the reduction of computational complexity. Nevertheless, the existing algorithms are mainly focused on binary images. We propose here a new fast method for computing the Legendre moments, which is not only suitable for binary images but also for grey level images. We first establish a recurrence formula of one-dimensional (1D) Legendre moments by using the recursive property of Legendre polynomials. As a result, the 1D Legendre moments of order p, L_p=L_p(0), can be expressed as a linear combination of L_p-1(1) and L_p-2(0). Based on this relationship, the 1D Legendre moments L_p(0) can thus be obtained from the arrays of L₁(a) and L₀(a), where a is an integer number less than p. To further decrease the computation complexity, an algorithm, in which no multiplication is required, is used to compute these quantities. The method is then extended to the calculation of the two-dimensional Legendre moments L_pq. We show that the proposed method is more efficient than the direct method.     

冗余磁盘阵列的故障容错分析

本文在介绍冗余磁盘阵列(RAID)的故障容错机理之后,着重研究了设备故障对RAID系统可靠性的影响.其平均持续正常工作时间和系统在线修复设备故障容许的平均间隔时间的计算结果表明,只要在一定的容许时间内替换或修复故障磁盘,系统可保持持续正常工作状态.     

化学镀Ni—P镀层的X射线衍射研究

根据X射线衍射分析结果,对化学镀高P(含P>11wt％或19at％)Ni-P镀层加热时效时,镀层成分和加热温度对结构转变的影响作了研究,结果表明,高P共晶、过共晶(含P>11wt％或19at％)合金的结构转变有如下特征:(1)相同加热时效条件下,Ni-P合金的结构转变与成分有密切关系:(2)对同一成分的过共晶合金,Ni-P合金的结构转变与时效温度密切相关;(3)过共晶合金在290～360℃温度范围内时效处理,出现Ni_xP_y介稳相,X射线衍射分析认为Ni_xP_y为Ni_(12)P_5。     

基于神经网络的模拟电路故障诊断优化近似方法

本文提出了线性电阻电路故障诊断的一种神经网络优化方法。其基本思想是应用Ｈｏｐｆｉｅｌｄ网络原理来处理Ｌ１范数问题，以此来进行诊断。对实例的计算证明此法是可行的。     

SnO催化合成环烷酸乙二醇酯增塑剂的研究

介绍了用SnO非酸性催化剂催化合成环烷酸乙二醇酯增塑剂(NAEP)的方法。讨论了反应温度、醇酸摩尔比、催化剂用量和反应时间等因素对酯化反应的影响,给出了适宜的工艺条件。 NAEP应用于PVC电缆料及丁腈橡胶配方中取得了良好的效果。与邻苯二甲酸酯增塑剂相比,具有更好的经济价值。     

Plasma Asp13-Ki-ras oncoprotein expression in vinyl chloride monomer workers in Taiwan

Vinyl chloride (VC) workers are known to be at risk for development of liver angiosarcoma, a rare tumor. Previously, more than 80% of VC workers with liver angiosarcoma have been found to have an Asp-13 c-Ki-ras oncogene mutation, and more than 50% of VC-exposed workers without liver tumors were found to have Asp13-Ki-ras oncoprotein in their plasma. Some workers in Taiwan had also been exposed to VC, and some have contracted liver tumors. In this study, we used enhanced chemiluminescence Western blotting to detect Asp13-p21-Ki-ras in the sera of VC-exposed workers in Taiwan. There were 14 of 113 (12.4%) VC workers positive for the Asp13-Ki-ras oncoprotein in plasma, but 0 of 18 controls were positive. There were 10 of 69 (14.5%) plasma-positives among the more highly exposed (> 1000 ppm-months) workers and 4 of 48 (9.1%) plasma-positives among the lesser exposed (< or = 1000 ppm-months). Compared with the unexposed controls, the odds ratios (and 95% confidence intervals [CI]) for plasma-positivity were 4.11 (95% CI = 0.21, 80.4) in the lower-exposed workers and 6.53 (95% CI = 0.37, 116.9) in the higher-exposed workers, and there was a linear trend between exposure and plasma-positivity (P = 0.073). After adjusting for age and drinking status, the odds ratios (and 95% CIs) were 1.64 (95% CI = 0.17, 15.8), and 2.65 (95% CI = 0.42, 16.8), respectively, and there was a significant linear trend between exposure and plasma-positivity (P = 0.048). In summary, Asp13-Ki-ras oncoprotein can be found in the plasma of VC workers in Taiwan, and a significant dose-response relationship exists between plasma oncoprotein expression and VC exposure.     

3^n阶矩阵乘法的分块算法

针对３＾ｎ阶矩阵的乘法运行，给出了一种分块算法，其乘法运行量比常规的矩阵乘法计算方法和补零的基－２算法都有所减少。     

AlGaAs／GaAs HBT表面效应的二维数值分析

采用表面效应集总模型综合考虑表面费米能级钉扎和表面复合效应，对ＡｌＧａＡｓ／ＧａＡｓＨＢＴ表面效应的影响进行了二维数值模拟。结果表明，表面态的存在对集电极电流几乎不产生影响，但显著增加基极电流，使得电流增益明显下降。同时还发现在台面结构ＡＩＧａＡｓ／ＧａＡｓＨＢＴ中外基区表面复合的集边效应，即外基区表面复合主要发生在发射极台面与外基区的交界处附近，与外基区长度基本无关。模拟还表明基区缓变结构可以减少表面复合，提高电流增益。