Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.     

刊首语

今天本刊以全新的面貌呈现于广大读者面前,这是杂志成长过程中的羽化新生。2006年9月,经国家新闻出版总署批准,《中国农村水电及电气化》杂志正式更名为《中国水能及电气化》。作为水利部主管的行业期刊,杂志的更名是主办单位水利部水电局贯彻落实科学发展观和《可再生能源法》     

SIDAC双向开关触发器的典型应用

详细介绍了SIDAC作为一种高压双向触发器的工作特点及其典型的应用电路。     

Research on the Distant Hybrids of Wheat Obtained via Low-Energy Ion-Beam Implantation

Abstract The whole DNA of soybean was implanted into four varieties of wheat of Zhongyu5, Huaiyin 9628, Wenyou 1, Jimai 5 respectively via ion-beam mediation. There were 5 plantsobtained whose protein content was higher than 18.5%, the highest one was 21.44%. There were 3plants obtained whose protein content was lower than 11.5%, the lowest one was 10.96%. We cansee that the whole DNA of soybean transformed into wheat via ion beam implantation can inducethe increase in wheat protein content dramatically. The result also shows that the transformationefficiency of different gene types of wheat receptor varies greatly that the implanting time has acertain effect on the efficiency of transformation.     

Ultrasonic thin-walled tube wave structure for sensing devices

Theoretical and experimental investigations of thin-walled tube acoustic wave devices for gravimetric sensing applications are presented. Integrated sensor configurations have been demonstrated by employing a sol-gel processed thin piezoelectric lead zirconate titanate (PZT) film. This was coated coaxially on stainless steel tubes and interdigital transducers (IDT) fabricated as the transmitter and receiver on the curved tube surfaces. We have observed tube waves along both the axial and circumferential directions between 1 and 6.6 MHz. We have also analyzed the mass sensitivities of different modes propagating along the tubes and shown that high mass sensitivity can be achieved by keeping the tube wall thin     

直接斜率波前复原算法的控制效果分析

建立自适应光学系统功率谱抑制函数的概念，分析了采用直接斜率波前复原算法的自适应当光学系统的控制效果，理论分析与６１单元自适应光学系统上的实验结果表明，直接斜率波前复原算法将导致控制效果下降。     

A comprehensive study of performance and reliability of P, As, andhybrid As/P nLDD junctions for deep-submicron CMOS logic technology

A comprehensive study of P, As, and hybrid As/P nLDD junctions is presented in terms of performance, reliability, and manufacturability for the first time. It is found that As junctions limit the performance of deep submicron devices due to unacceptable hot-carrier reliability, whereas a hybrid junction (light dose P added to medium dose As) dramatically improves hot-carrier reliability while maintaining high performance and manufacturability. For L_eff of 0.19 μm, using this hybrid junction in a manufacturing process, an inverter gate delay of 32 ps, dc hot carrier life time exceeding ten years, and off-state leakage below 30 pA/μm at 2.9 V have been achieved