Numerical simulation on the behavior of a liquid jet into an air flow

A numerical simulation has been performed to clarify the effects of turbulence in a liquid on the deformation of the liquid jet surface into an air flow. The turbulences in the liquid jet were simulated by the Rankin vortices, and the liquid jet surface was tracked numerically by the volume of fluid method. By numerical simulations, the onset of the protrusions on the liquid jet surface is caused by the vortices in the liquid, and the surrounding air flow plays an important role in the amplification of the protrusions. The amplification rate of the trough displacement is proportional to the air‐to‐liquid velocity ratio. At large imposed vortex intensities, the trough displacement increases with the vortex intensity. On the other hand, at small imposed vortex intensities, the amplification of the trough displacement is also affected by factors other than vortex intensity. © 2001 Scripta Technica, Heat Trans Asian Res, 30(6): 473–484, 2001     

Periodical shedding of cloud cavitation from a single hydrofoil in high-speed cryogenic channel flow

In order to explain criteria for periodical shedding of the cloud cavitation, flow patterns of cavitation around a plano-convex hydrofoil were observed using a cryogenic cavitation tunnel of a blowdown type. Two hydrofoils of similarity of 20 and 60 mm in chord length with two test sections of 20 and 60 mm in width were prepared. Working fluids were water at ambient temperature, hot water and liquid nitrogen. The parameter range was varied between 0.3 and 1.4 for cavitation number, 9 and 17 m/sec for inlet flow velocity, and −8° and 8° for the flow incidence angle, respectively. At incidence angle 8°, that is, the convex surface being suction surface, periodical shedding of the whole cloud cavitation was observed on the convex surface under the specific condition with cavitation number and inlet flow velocity, respectively, 0.5, 9 m/sec for liquid nitrogen at 192°C and 1.4, 11 m/sec for water at 88°C, whereas under the supercavitation condition, it was not observable. Periodical shedding of cloud cavitation occurs only in the case that there are both the adverse pressure gradient and the slow flow region on the hydrofoil.     

Electron-beam doping-electron radiation effects in impurity overlayers and semiconductor substrates

3-9 MeV electrons were used to introduce impurity Ge atoms into Si wafers from Ge sheets, which are in contact with a Si surface at 20-60‡C in water bath. Concentration-dependent diffusivities of ∼10-18-10^-14 cm²sec^-1 for Ge in Si were measured. Activation energies of sputtering yield for Ge and of the diffusivity of Ge in Si are estimated to be ∼0.3 eV and ∼0.58 eV, respectively. In a case of hot (∼250‡C) irradiation in ∼1x10^-3 Torr vacuum, also the similar concentration profiles of impurity atoms in the substrates were observed.     

A Spatial-Domain Technique for the Design of 3-D Separable-Denominator State-Space Digital Filters

In this paper,a technique for designing 3-D separable-denominator state-spacedigital filters is developed. The design process is divided intotwo phases. First, the coefficient matrices related to stabilityare constructed for the filter to be stable by using alternatingvariable method. Next, the other matrices are obtained by solvinglinear equations. These phases are repeated until there is nosignificant change in the squared error function.     

Current reliability issues and future technologies for systems on silicon – processes, circuits, chip architecture, and design

The progress of silicon technology is opening the era of “systems on silicon” in which a large-scale memory, a CPU, and other logic macros will be integrated on a single chip. These kinds of chips, called system LSIs, have an especially promising future in mobile and multimedia applications but face inherent technical problems related to the reliability of ultrathin oxide film, conflict in the processing of different components, increased gate and subthreshold leakage currents, memory bottlenecks, and design complexity. This paper reviews the system LSIs and then introduces related technologies in processing, circuits, chip architecture, and design. It also discusses the influence of the system LSIs on business strategies.     

Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding

This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices.     

Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high-resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO₂ surface to the Si substrate and interface roughness were addressed. On the basis of these findings, the optical model that addresses the characteristics of plasma-damaged Si surfaces is given for ellipsometric analysis. The proposed model includes an interface layer modeled as a mixture of SiO₂ and Si phases. A part of the interface layer could not be removed by wet-etching, signifying the distinct features of the interface layer that are difficult to remove. The proposed model is anticipated to be practical for in-line monitoring of plasma-induced damage.     

Crystal growth of MgAlB14-type compounds using metal salts and some properties

LEAlB₁₄ (orthorhombic, Imam) (LE = Li, Mg) crystals were grown using metal salts (Li₂CO₃, LiF, LiI, MgO, MgF₂, MgI₂) and crystalline boron from a high-temperature aluminium metal flux. The growth conditions for growing LEAlB₁₄ were established using the starting mixtures of B/LE = 2.0, and Al metal was added to each mixture at a mass ratio of 1:15–20. LEAlB₁₄ crystals from the Al-self flux using metal salts could be obtained from all the different salts. The maximum dimensions of LiAlB₁₄ and MgAlB₁₄ crystals were approximately 18 and 12 mm for the crystals obtained from LiF and MgF₂. The unit-cell parameters of as-grown LEAlB₁₄ are as follows: for LiAlB₁₄, obtained from LiF, a = 0.5846 (2) nm, b = 0.8144 (2) nm, c = 1.0355 (3) nm, V = 0.4930 (2) nm³: for MgAlB₁₄, obtained from MgF₂, a = 0.5845 (2) nm, b = 0.8114 (2) nm, c = 1.0330 (3) nm, V = 0.4899 (3) nm³. Microhardness, oxidation resistance and magnetic susceptibility of these materials are described in detail.     

Synthesis of ordered mesoporous carbon thin films at various temperatures in vapor infiltration method

Mesoporous carbon thin films with ordered structures were prepared by using resorcinol-surfactant self-assembly. A mixture of resorcinol, surfactant, and ethanol coated on silicon substrates was exposed to formaldehyde vapor as a cross-linking agent to form structured resorcinol/formaldehyde resin films. The films were then carbonized at 800 °C in an inert atmosphere to remove the surfactant and to obtain structured carbon materials. With this vapor infiltration method, thin films with several structures were obtained from the same precursor solution by employing different vapor infiltration temperatures. The results were interpreted from the transformation of the self-assembly during the vapor infiltration process.