Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Effects of microstructural evolution and intermetallic layer growth on shear strength of ball-grid-array Sn-Cu solder joints

The shear strength of ball-grid-array (BGA) solder joints on Cu bond pads was studied for Sn-Cu solder containing 0, 1.5, and 2.5 wt.% Cu, focusing on the effect of the microstructural changes of the bulk solder and the growth of intermetallic (IMC) layers during soldering at 270°C and aging at 150°C. The Cu additions in Sn solder enhanced both the IMC layer growth and the solder/IMC interface roughness during soldering but had insignificant effects during aging. Rapid Cu dissolution from the pad during reflow soldering resulted in a fine dispersion of Cu₆Sn₅ particles throughout the bulk solder in as-soldered joints even for the case of pure Sn solder, giving rise to a precipitation hardening of the bulk solder. The increased strength of the bulk solder caused the fracture mode of as-soldered joints to shift from the bulk solder to the solder/IMC layer as the IMC layer grew over a critical thickness about 1.2 m for all solders. The bulk solder strength decreased rapidly as the fine Cu₆Sn₅ precipitates coarsened during aging. As a consequence, regardless of the IMC layer thickness and the Cu content of the solders, the shear strength of BGA solder joints degraded significantly after 1 day of aging at 150°C and the shear fracture of aged joints occurred in the bulk solder. This suggests that small additions of Cu in Sn-based solders have an insignificant effect on the shear strength of BGA solderjoints, especially during system use at high temperatures.     

Embedded microstrip interconnection lines for gigahertz digitalcircuits

Transmission line structures are needed for the high-performance interconnection lines of GHz integrated circuits (ICs) and multichip modules (MCMs), to minimize undesired electromagnetic wave phenomena and, therefore, to maximize the transmission bandwidth of the interconnection lines. In addition, correct and simple models of the interconnection lines are required for the efficient design and analysis of the circuits containing the interconnection lines. In this paper, we present electrical comparisons of three transmission line structures: conventional metal-insulator-semiconductor (MIS) and the embedded microstrip structures-embedded microstrip (EM) and inverted embedded microstrip (IEM). In addition, we propose closed-form expressions for the embedded microstrip structures EM and IEM and validate the expressions by comparing with empirical results based on S-parameter measurements and subsequent microwave network analysis. Test devices were fabricated using a 1-poly and 3-metal 0.6 μm Si process. The test devices contained the conventional MIS and the two embedded microstrip structures of different sizes. The embedded microstrip structures were shown to carry GHz digital signals with less loss and less dispersion than the conventional MIS line structures. S-parameter measurements of the test devices showed that the embedded microstrip structures could support the quasi-TEM mode propagation at frequencies above 2 GHz. On the other hand, the conventional MIS structure showed slow-wave mode propagation up to 20 GHz. More than 3-dB/mm difference of signal attenuation was observed between the embedded microstrip structures and the conventional MIS structure at 20 GHz. Finally, analytical RLCG transmission line models were developed and shown to agree well with the empirical models deduced from S-parameter measurements     

Boundary element analysis of thermal stress intensity factors for interface griffith and cusp cracks

The thermal stress intensity factors for interface cracks of Griffith and symmetric lip cusp types under vertical uniform heat flow in a finite body are calculated by the boundary element method. The boundary conditions on the crack surfaces are insulated or fixed to constant temperature. The relationship between the stress intensity factors and the displacements on the nodal point of a crack-tip element is derived. The numerical values of the thermal stress intensity factors for an interface Griffith crack in an infinite body are compared with the previous solutions. The thermal stress intensity factors for a symmetric lip cusp interface crack in a finite body are calculated with respect to various effective crack lengths, configuration parameters, material property ratios and the thermal boundary conditions on the crack surfaces. Under the same outer boundary conditions, there are no appreciable differences in the distribution of thermal stress intensity factors with respect to each material property. However, the effect of crack surface thermal boundary conditions on the thermal stress intensity factors is considerable.     

Multifunctional Ir–Ru alloy catalysts for reversal-tolerant anodes of polymer electrolyte membrane fuel cells

To address the problem of fuel starvation in fuel-cell electric vehicles,which causes cell voltage reversal and results in cell failure when repeated continuously,we developed a reversal-tolerant anode(RTA) to promote water oxidation in preference to carbon corrosion.Graphitized carbon-supported Ir-Ru alloys with different compositions are employed as RTA catalysts in an acidic polyol solution and are shown to exhibit composition-dependent average crystallite sizes of <5.33 nm.The adopted approach allows the generation of relatively well-dispersed Ir-Ru alloy nanoparticles on the carbon support without severe agglomeration.The activity of IrRu₂/C for the hydrogen oxidation reaction is 1.10 times that of the stateof-the-art Pt/C catalyst.Cell reversal testing by simulation of fuel starvation reveals that the durability of IrRu₂/C(~7 h) significantly exceeds that of the conventional Pt/C catalyst(~10 min) and is the highest value reported so far.Thus,the developed Ir-Ru alloy catalyst can be used to fabricate practical RTAs and replace Pt catalysts in the anodes of polymer electrolyte membrane fuel cells.     

Effect of Multi-Wall Carbon Nanotubes on the Mechanical Properties of Natural Rubber

Multi-walled carbon nanotubes (MWNTs) were used to prepare natural rubber (NR) nanocomposites. Our first efforts to achieve nanostructures in MWNTs/NR nanocomposites were formed by incorporating carbon nanotubes in a polymer solution and subsequently evaporating the solvent. Using this technique, nanotubes can be dispersed homogeneously in the NR matrix in an attempt to increase the mechanical properties of these nanocomposites. The properties of the nanocomposites such as tensile strength, tensile modulus, elongation at break and hardness were studied. Mechanical test results show an increase in the initial modulus for up to 12 times in relation to pure NR. In addition to mechanical testing, the dispersion state of the MWNTs into NR studied by Transmission Electron Microscopy (TEM) in order to understand the morphology of the resulting system     

Deformation behavior of duplex austenite and ε-martensite high-Mn steel

Abstract

Deformation and work hardening behavior of Fe–17Mn–0.02C steel containing ε-martensite within the austenite matrix have been investigated by means of in situ microstructural observations and x-ray diffraction analysis. During deformation, the steel shows the deformation-induced transformation of austenite → ε-martensite → α′-martensite as well as the direct transformation of austenite → α′-martensite. Based on the calculation of changes in the fraction of each constituent phase, we found that the phase transformation of austenite → ε-martensite is more effective in work hardening than that of ε-martensite → α′-martensite. Moreover, reverse transformation of ε-martensite → austenite has also been observed during deformation. It originates from the formation of stacking faults within the deformed ε-martensite, resulting in the formation of 6H-long periodic ordered structure.