An InGaAs/InAlAs superlattice avalanche photodiode with a gain bandwidth product of 90 GHz

The authors describe the fabrication of an InGaAs/InAlAs superlattice avalanche photodiode with a gain-bandwidth product of 90 GHz. The device is composed of an InGaAs/InAlAs superlattice multiplication region and an InGaAs photoabsorption layer. The effect of the superlattice multiplication region thickness on the gain-bandwidth product was studied. A gain-bandwidth product of 90 GHz was obtained for the device with a multiplication region thickness of 0.52 mu m. Low noise performance is compatible with the high gain-bandwidth product due to improvement of the ionization rate ratio made by introducing a superlattice structure into the multiplication region.<>     

Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHz

Modulated light spectra were measured in long-wavelength InGaAs-InAlAs multiple-quantum-well intensity modulators under 30-GHz large-signal modulations. The linewidth broadening factor alpha is determined from the relation between the intensity modulation index and the sideband strength relative to the carrier. The minimum alpha value is estimated to be 0.70 at 1.54 mu m, which is almost the same as the lowest value so far reported in a bulk Franz-Keldysh modulator. This is significantly lower than what is obtained from direct-intensity modulation of injection lasers, making this a useful device for application to high-bit-rate long-haul optical communication systems.<>     

Fabrication of grain-oriented MoO3 ceramics using wet- moulding process

Abstracts are not published in this journal This revised version was published online in November 2006 with corrections to the Cover Date.     

A concentrator module of spherical Si solar cell

Spherical Si solar cell, which is made up of Si spheres with a diameter of approximately 1.0 mm, is expected to be a promising candidate for low consumption of Si feedstock and simple process technology. This paper describes the formation process and the structure of a concentrator module in detail. The concentrator lens was formed by casting with ultraviolet light hardening resin. The concentration ratio was 4.4 times and the pitch between the spheres was 2.0 mm. By this module design, it was possible to realize a consumption of the Si feedstock of about 3.0 g/W. Conversion efficiencies of 11.3% from single-sphere cell, 8.5% from a 23-spheres module and 5.2% from a 105-spheres module under AM1.5, 100 mW/cm² illumination were achieved.     

Discharge characteristics of a new ACPDP structure using Thick‐Film Ceramic Sheet technology

Abstract— We have proposed a counterelectrode PDP structure in which the sustain and scan electrodes are embedded face to face in the ribs by applying Thick‐Film Ceramic Sheet technology. An advantage of the counterelectrode PDP is low discharge voltage, which does not depend on the dielectric thickness. A positive column is observed at a longer gap, and the luminous efficacy reaches 3.7 lm/W at Ne‐30%Xe at a 450‐μm discharge gap.     

Proton conduction in Nafion composite membranes filled with mesoporous silica

Studies of proton-conductive polymer membranes are vital for the future development of high-performance polymer electrolyte membrane fuel cells (PEM-FC). In particular, a method for inhibiting the volatility of water in the polymer matrix at high temperatures is a crucial issue, directly related to the operation of PEM-FC system. In this study, we focus on polymer composite membranes, which consist of commercial Nafion and mesoporous silica (MPSi) as novel inorganic additives, and investigate an improvement in the total proton conductivities and the good electrochemical stability at high temperatures. MPSi, which can be synthesized with pore sizes from 1 to 10 nm, has a wide range of potential applications because of its extraordinary properties, such as extremely large surface area, flawless surface condition and well-regulated porous structure. We found that the Nafion composites filled with MPSi have approximately 1.5 times higher proton conductivities (more than 0.1 S cm⁻¹ at 80 °C and 95%RH) than pure Nafion and can display good temperature performance relative to pure Nafion and the particle SiO₂ composite. Moreover, the conductivity of Nafion/sulfonated MPSi was the highest (0.094 S cm⁻¹) at 40 °C and 95%RH. These are probably due to the large surface area of MPSi, which can increase the water adsorption in Nafion matrix.     

Molecular structure of La3+-induced methanol dehydrogenase-like protein in Methylobacterium radiotolerans

La(3+) and not Ca(2+) increases methanol dehydrogenase (MDH) activity in Methylobacterium radiotolerans NBRC15690. La(3+)- and Ca(2+)-MDH-like proteins were found to be homodimeric (α(2)) and heterotetrameric (α(2)β(2)), respectively. N-terminal amino acid sequences of these proteins revealed that La(3+)- and Ca(2+)-MDH-like proteins were encoded by xoxF and mxaFI, respectively.     

The Direct Spectroscopy of Positronium Hyperfine Structure Using a Sub-THz Gyrotron

Positronium is an ideal system for research on Quantum Electrodynamics (QED), especially in a bound state. A discrepancy of 3.9 standard deviations has been found between the measured hyperfine structure (Ps-HFS) and the QED predictions. This may be due to the contribution of unknown new physics or common systematic effects in previous measurements, in all of which the Zeeman effect was used. We propose a new method to directly measure the Ps-HFS using a high power gyrotron. We compare two resonators which have been developed to supply sufficient power to drive the direct transition, a Fabry-Pérot resonator and a ring resonator with a diffraction grating. We plan to perform first direct measurement of Ps-HFS within the next six months.     

Long-term pharmacological kindling increases in vitro release of IR-Met and IR-Leu-enkephalin from amygdala

Preoperative therapy with octreotide, a long-acting somatostatin analog, suppresses GH hypersecretion, shrinks GH-producing tumors and leads to an improvement in subsequent surgical remission in acromegalic patients. A continuous infusion of octreotide has demonstrated more persistent suppression of GH secretion than intermittent injections, and only a few studies were reported on the effect of the tumor shrinkage with a continuous infusion of a small dose of octreotide. We therefore investigated the preoperative effects of small doses of octreotide (120-240 micrograms/day) administered continuously (with a subcutaneous infusion pump) over a short period (2 or 4 weeks) in nine untreated acromegalic patients. Octreotide therapy resulted in suppression of serum GH and IGF-1 concentrations in 8 out of 9 patients and reduction in pituitary tumor size measured by MRI in all patients (by 7.9 to 38.5%). In particular, considerable reduction in tumor size (more than 20%) occurred in 6 of 9 patients. In three patients assessed serially throughout the preoperative period, reduction in tumor size was noted within only one week after the start of octreotide therapy and reduction rate more than 20% was obtained within the first two weeks. In one patient, suprasellar tumor expansion totally disappeared after such therapy. Our results indicate that short-term continuous subcutaneous infusion of a small dose of octreotide results in not only inhibition of GH hypersecretion but also shrinkage of tumor size prior to surgery.     

High microwave and ultra-low noise performance of fullyion-implanted GaAs MESFETs with Au/WSiN T-shaped gate

Fully ion-implanted n⁺ self-aligned GaAs MESFETs with high microwave and ultra-low-noise performance have been fabricated. T-shaped gate structures composed of Au/WSiN are employed to reduce gate resistance effectively. A very thin and high-quality channel with high carrier concentration can be formed by adopting the optimum annealing temperature for the channel, and the channel surface suffers almost no damage by using ECR plasma RIE for gate formation. GaAs MESFETs with a gate length as short as 0.35 μm demonstrated a maximum oscillation frequency of 76 GHz. At an operating frequency of 18 GHz, a minimum noise figure of 0.81 dB with an associated gain of 7.7 dB is obtained. A K_f factor of 1.4 estimated by Fukui's noise figure equation, which is comparable to those of AlGaAs/GaAs HEMTs with the same geometry, reveals that the quality of the channel is very high