首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   86652篇
  免费   6130篇
  国内免费   2931篇
电工技术   4353篇
技术理论   9篇
综合类   4649篇
化学工业   15512篇
金属工艺   4454篇
机械仪表   5232篇
建筑科学   7029篇
矿业工程   1985篇
能源动力   2480篇
轻工业   4901篇
水利工程   1447篇
石油天然气   4539篇
武器工业   488篇
无线电   10444篇
一般工业技术   11305篇
冶金工业   4687篇
原子能技术   831篇
自动化技术   11368篇
  2024年   324篇
  2023年   1314篇
  2022年   2280篇
  2021年   3118篇
  2020年   2337篇
  2019年   2034篇
  2018年   2255篇
  2017年   2518篇
  2016年   2359篇
  2015年   2942篇
  2014年   4018篇
  2013年   5070篇
  2012年   5243篇
  2011年   5519篇
  2010年   4899篇
  2009年   4716篇
  2008年   4466篇
  2007年   4402篇
  2006年   4647篇
  2005年   4133篇
  2004年   2784篇
  2003年   2497篇
  2002年   2192篇
  2001年   2019篇
  2000年   2281篇
  1999年   2560篇
  1998年   2386篇
  1997年   1886篇
  1996年   1743篇
  1995年   1446篇
  1994年   1216篇
  1993年   880篇
  1992年   655篇
  1991年   543篇
  1990年   409篇
  1989年   367篇
  1988年   318篇
  1987年   175篇
  1986年   165篇
  1985年   112篇
  1984年   98篇
  1983年   63篇
  1982年   60篇
  1981年   54篇
  1980年   38篇
  1979年   32篇
  1978年   13篇
  1977年   33篇
  1976年   16篇
  1975年   15篇
排序方式: 共有10000条查询结果,搜索用时 10 毫秒
951.
利用在线应力测试技术表征了掺入Pt后对镍硅化物薄膜应力性质的影响.通过改变NiSi薄膜中Pt含量以及控制热处理的升温、降温速率实时测量了薄膜应力,发现在Si(100)衬底上生长的纯NiSi薄膜和纯PtSi薄膜的室温应力主要是热应力,且分别为775MPa和1.31GPa,而对于Ni1-xPtxSi合金硅化物薄膜,室温应力则随着Pt含量的增加而逐渐增大.应力随温度变化曲线的分析表明,Ni1-xPtxSi合金硅化物薄膜的应力驰豫温度随Pt含量的增加,从440℃(纯NiSi薄膜)升高到620℃(纯PtSi薄膜).应力驰豫温度的变化影响了最终室温时的应力值.  相似文献   
952.
In this paper, we present an efficient cascading procedure for analyzing frequency selective surface (FSS) systems consisting of multiple FSS screens of unequal periodicity embedded in multiple dielectric layers. In this procedure, we first find a global period for the FSS system by studying the composite in its entirety. Next, we compute the scattering matrix [S] of each of the FSS subsystems for the global Floquet harmonics by applying a relationship we establish that maps the [S] matrix of the subsystem for the individual Floquet harmonics to that for the global harmonics. This mapping-cum-filling process substantially reduces the effort needed to compute the [S] matrix of a subsystem. Finally, we compute the [S] of the entire system by applying a modified cascading formulation, in which one matrix inversion step is eliminated, resulting in a reduction in the total computing resource requirement as well as time. Two numerical examples are given to illustrate the efficiency and effectiveness of the technique.  相似文献   
953.
MEMS系统设计的节点分析法已经被成功地用于机械或机电耦合器件的仿真,但其无法用于热执行器中热-电耦合问题的分析仿真.本文提出一种通过傅里叶变换使用节点分析法动态分析仿真热执行器中热电耦合问题的方法,并建立了热执行器中基本单元--梁单元的热电耦合模型.这种模型的分析计算结果与有限元软件ANSYS吻合较好.  相似文献   
954.
为实现光纤通信系统中的单片光电集成,采用工业标准工艺设计了硅基光电探测器,讨论了光电探测器的机理,提出了五种新的探测器结构,并采用TSMC 0.18μm MS/RF CMOS工艺进行了流片.利用半导体测试仪对芯片进行了测试,包括探测器的暗电流、响应度和结电容,并分析了深n阱、浅沟槽隔离等工艺步骤对探测器参数的影响.结果表明,利用标准MS/RF CMOS工艺实现的光电探测器具有良好的特性.  相似文献   
955.
用宽禁带半导体n-4H-SiC和金属Au作肖特基接触,Ti,Ni,Ag合金作背底形成欧姆接触,研制出Au/n4H-SiC肖特基紫外探测器.测试分析了器件在高温高压下的光谱响应特性,响应范围在200~400nm之间,室温无偏压下,响应峰值在320nm,响应半宽为82nm.在高反压下(100V以上)探测器的光谱响应曲线出现了锐上升和锐截止,在260~380nm之间有非常平稳的光谱响应;在高温533K无偏压下,紫外响应特性仍然保持良好.  相似文献   
956.
Polycrystalline VO2 thin films were obtained on Si substrates by ion beam sputtering deposition and annealing in flowing Ar gas. SEM images indicate that VO2 thin films were grown into compact surfaces. Four-probe measurements indicated that the VO2 thin films own good electrical homogeneity. After the films' production, micromachining technology including lithography, reaction ion etching and metallization connection processes was used to produce the optical switch array. As a result, the 128×128 element optical switch array was achieved.  相似文献   
957.
Pre-amorphization implantation has been applied as a shallow junction technology. Roughness at amorphous/crystalline (a/c) interface should be controlled to improve junction characteristics. To understand and model a/c interface roughness, molecular dynamic method is applied in simulating pre-amorphization implantation. A method to reproduce roughness at a/c interface by molecular dynamic simulation is presented. A model of interface roughness is presented. Si and Ge implantation from 2-20 keV at a dose of 1 × 1015 cm−2 is simulated. The depth of a/c interface is reproduced. Experimental results of a/c interface roughness are successfully simulated. The interface roughness is well reproduced and interpreted by the model presented.  相似文献   
958.
This paper investigates the issues of QoS routing in CDMA/TDMA ad hoc networks. Since the available bandwidth is very limited in ad hoc networks, a QoS request between two nodes will be blocked if there does not exist a path that can meet the QoS requirements, even though there is enough free bandwidth in the whole system. In this paper, we propose a new scheme of using multiple paths between two nodes as the route for a QoS call. The aggregate bandwidth of the multiple paths can meet the bandwidth requirement of the call and the delays of these paths are within the required bound of the call. We also propose three strategies by which to choose a set of paths as the route, namely, shortest path first (SPF), largest bandwidth first (LBF), and largest hop‐bandwidth first (LHBF). Extensive simulations have been conducted to evaluate the performance of the three strategies in comparison with a traditional single path routing algorithm. The simulation results show that the proposed multiple paths routing scheme significantly reduces the system blocking rates in various network environments, especially when the network load is heavy. Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
959.
A design-based method to fuse Gabor filter and grey level co-occurrence probability (GLCP) features for improved texture recognition is presented. The fused feature set utilizes both the Gabor filter's capability of accurately capturing lower and mid-frequency texture information and the GLCP's capability in texture information relevant to higher frequency components. Evaluation methods include comparing feature space separability and comparing image segmentation classification rates. The fused feature sets are demonstrated to produce higher feature space separations, as well as higher segmentation accuracies relative to the individual feature sets. Fused feature sets also outperform individual feature sets for noisy images, across different noise magnitudes. The curse of dimensionality is demonstrated not to affect segmentation using the proposed the 48-dimensional fused feature set. Gabor magnitude responses produce higher segmentation accuracies than linearly normalized Gabor magnitude responses. Feature reduction using principal component analysis is acceptable for maintaining the segmentation performance, but feature reduction using the feature contrast method dramatically reduced the segmentation accuracy. Overall, the designed fused feature set is advocated as a means for improving texture segmentation performance.  相似文献   
960.
In contrast with diverse design concepts of actuators, we have developed an electrostatic linear actuator integrated with a long stroke rolling spring guide. The rolling spring guide realizes guiding function through rolling movements of two parallel preloaded belt-shaped springs. The electrostatic actuating force is generated by applying electrical fields to the structure of spring guide. Besides the driving voltage, the geometric size and the preloaded span of the spring guide are the main influential parameters of electrostatic actuating force and actuating displacement. With adequate adjustment of the preloaded span, this electrostatic actuator can generate not only a large actuating displacement in /spl mu/m range, but also a fine positioning displacement in /spl mu/m range. The finite element analysis (FEA) and the geometric analysis are applied to analyze spring stress and to derive the shape equation of the spring guide. Furthermore, a theoretical model for our electrostatic actuating principle is deduced on the basis of the shape equation. In addition to the theoretical analyses, the performance of the electrostatic actuator is experimentally tested and studied.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号