A novel sine‐curve mobility model for intrusion detection in wireless sensor networks

Intrusion detection is prominently important for civil and military applications in wireless sensor networks (WSNs). To date, related works address the problem by assuming a straight‐line intrusion path and a Boolean sensing model. However, a straight‐line intrusion path is often not the case in reality, and the Boolean sensing model cannot resemble a real‐world sensor precisely. Results based on these assumptions are therefore not applicable with desirable accuracy in practice. In view of this, we propose a novel sine‐curve mobility model that can simulate different intrusion paths by adjusting its features (amplitude, frequency, and phase) and can be integrated into the random WSN model for intrusion detection analysis. It can also be applied to different sensor models and makes influencing factors tractable. With the model, we examine the effects of different intrusion paths on the intrusion detection probability in a random WSN, considering both Boolean and realistic Elfes sensing models. Further, we investigate the interplays between network settings and intruder's mobility patterns and identify the benefits and side effects of the model theoretically and experimentally. Simulation outcomes are shown to match well with the theoretical results, validating the modeling, analysis, and conclusions. Copyright © 2011 John Wiley & Sons, Ltd.     

Field Emission and Cathodoluminescence of ZnS Hexagonal Pyramids of Zinc Blende Structured Single Crystals

Single‐crystal hexagonal pyramids of zinc blende ZnS are fabricated by facile thermal evaporation in an ammonia atmosphere at 1150 °C. It is found that ZnS pyramids grow along the [111] crystal axis and possess a sharp tip with a diameter of ～10 nm and a micrometer‐sized base. The structural model and growth mechanism are proposed based on crystallographic characteristics. This unique ZnS pyramid structure exhibits a low turn‐on field (2.81 V µm^?1), a high field‐enhancement factor (over 3000), a large field‐emission current density (20 mA cm^?2), and good stability with very small fluctuation (0.9%). These superior field‐emission properties are clearly attributed to the pyramid morphology, with micrometer‐sized bases and nanotips, and high crystallinity. Moreover, a stable UV emission of 337 nm at room temperature is observed and can be ascribed to the band emission of the zinc blende phase. These results suggest that the ZnS hexagonal pyramids can be expected to find promising applications as field emitters and optoelectronic devices.     

Rational Design of Charge‐Neutral,Near‐Infrared‐Emitting Osmium(II) Complexes and OLED Fabrication

A new series of charge neutral Os(II) isoquinolyl triazolate complexes ( 1 – 4 ) with both trans and cis arrangement of phosphine donors are synthesized, and their structural, electrochemical and photophysical properties are established. In sharp contrast to the cis‐arranged complexes 2 – 4 , the trans derivative 1 , which shows a planar arrangement of chromophoric N‐substituted chelates, offers the most effective extended π‐delocalization and hence the lowest excited state energy gap. These complexes exhibit phosphorescence with peak wavelengths ranging from 692–805 nm in degassed CH₂Cl₂ at room temperature. Near‐infrared (NIR)‐emitting electroluminescent devices employing 6 wt % of 1 (or 4 ) doped in Alq₃ host material are successfully fabricated. The devices incorporating 1 as NIR phosphor exhibit fairly intense emission with a peak wavelength at 814 nm. Forward radiant emittance reaches as high as 65.02 µW cm^?2, and a peak EQE of ～1.5% with devices employing Alq₃, TPBi and/or TAZ as electron‐transporting/exciton‐blocking layers. Upon switching to phosphor 4 , the electroluminescence blue shifts to 718 nm, while the maximum EQE and radiance increase to 2.7% and 93.26 (μW cm^?2) respectively. Their performances are optimized upon using TAZ as the electron transporting and exciton‐blocking material. The OLEDs characterized represent the only NIR‐emitting devices fabricated using charge‐neutral and volatile Os(II) phosphors via thermal vacuum deposition.     

An Alternative Route Towards Metal–Polymer Hybrid Materials Prepared by Vapor‐Phase Processing

Transition metals incorporated into polymers lead to unusual or improved physical properties that significantly differ from those of purely organic polymers. A simple and practicable incorporation of diverse transition metals into any available polymer would make an important contribution to overcome some of the synthetic difficulties of metal‐polymer hybrid materials. Here, it is demonstrated that atomic layer deposition (ALD) can be a promising means to resolve some of those difficulties. It is found that even polytetrafluoroethylene (PTFE) with its great physical and chemical stability can be easily transformed into a transition metal–PTFE hybrid material simply by applying a metal‐oxide ALD process to PTFE. Upon metal incorporation into the PTFE, the molecular structure as well as mechanical properties (tensile behavior) of PTFE were observed to significantly change. For a better understanding of the changes to the material, experimental investigations using Raman spectroscopy, attenuated‐total‐reflection Fourier‐transform infrared spectroscopy, wide‐angle X‐ray diffraction, and energy‐dispersive X‐ray analysis were performed. In addition, with density functional theory calculations, potential bonding states of the incorporated metal into PTFE were modeled and predicted. The ALD‐based vapor‐phase approach for metal incorporation into a polymer could bring about rapid progress in the research area of metal–polymer hybrid materials.     

Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS

We present a new approach to obtain low-cost and high-performance SiGe phototransistors in a commercial BiCMOS process. Photoresponsivity of 2.7 A/W was obtained for 850-nm detection due to the transistor gain, corresponding to 393% quantum efficiency. Responsivities of 0.13 A/W and 0.07mA/W were achieved for 1060 and 1310 nm with SiGe absorption. With V/sub ce/=2 V, we measure a -3-dB bandwidth of up to 5.3 GHz for phototransistors with a 4-/spl mu/m/sup 2/ active area and 2.0 GHz for phototransistors with 60-/spl mu/m/sup 2/ active area and finger contacts. This high-efficiency and high-speed phototransistor is an enabling device for monolithic receiver integration.     

Amazing ageing property and in situ comparative study of field emission from tungsten oxide nanowires

In this work, needle-shaping of tungsten oxide nanowires occurred during field emission characterization. Compared with nanowires with a flat apex, needle-shaped emitters showed a lower threshold field of 11.9 V μm(-1) for 1 mA cm(-2) and a higher emission current of 1120 μA at 16.2 V μm(-1). Most notably, the measured ageing current dramatically increased by more than four times until it slightly decreased, tending towards stability. In addition, the samples showed striking difference in their nonlinear Fowler-Nordheim plot before and after ageing tests. Selected area diffraction and transmission electron microscope characterizations were used to further study these amazing results.     

Physicochemical properties and osteogenic activity of radiopaque calcium silicate–gelatin cements

The purpose of this study is to evaluate the physicochemical properties and in vitro osteogenic activity of radiopaque calcium silicate–gelatin cements. The radiopacity, setting time, working time, flow, diametral tensile strength, pH value, washout resistance and morphology of the cements with gelatin (0, 5 and 10 % by weight) were measured, which compared to a popular endodontic material, ProRoot white-colored mineral trioxide aggregate (WMTA). The cell morphology, cell attachment and proliferation, alkaline phosphatase and osteocalcin levels on the cements were measured by culturing the specimens with dental pulp cells. The results indicated that the presence of gelatin significantly (P < 0.05) reduced radiopacity and diametral tensile strength and prolonged setting time. Nevertheless, the 5 wt% gelatin cement had a radiopacity (5.1 mm of Al thickness) higher than ISO 6876:2001 standards (3 mm of Al thickness). The setting time (33 min), working time (9 min) and flow value (17.4 mm) of the 5 wt% gelatin cement were significantly (P < 0.05) better than those of WMTA (corresponding 165, 6 min and 14.2 mm). The fresh WMTA completely degraded after soaking in a physiological solution for 1 h, while the gelatin cements resisted washout, showing no noticeable breakdown even after 1 day of soaking. The gelatin cement enhanced the higher expression of cell attachment, proliferation and differentiation as compared to WMTA. It was concluded that the 5 wt% gelatin–calcium silicate hybrid cement appears to be promising as a radiopaque biomaterial for medical applications such as endodontics and vertebroplasty.     

Effects on Undercooling and Interfacial Reactions with Cu Substrates of Adding Bi and In to Sn-3Ag Solder

This study investigated the effects of adding Bi and In to Sn-3Ag Pb-free solder on undercooling, interfacial reactions with Cu substrates, and the growth kinetics of intermetallic compounds (IMCs). The amount of Sn dominates the undercooling, regardless of the amount or species of further additives. The interfacial IMC that formed in Sn-Ag-Bi-In and Sn-In-Bi solders is Cu₆Sn₅, while that in Sn-Ag-In solders is Cu₆(Sn,In)₅, since Bi enhances the solubility of In in Sn matrices. The activation energy for the growth of IMCs in Sn-Ag-Bi-In is nearly double that in Sn-Ag-In solders, because Bi in the solder promotes Cu dissolution. The bright particles that form inside the Sn-Ag-In bulk solders are the ζ-phase.