Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

SUN工作站生产测井解释系统（PLASYS）

吕永军,胡亚兵,毕卓新.SUN 工作站生产测井解释系统(PLASYS).测井技术,1993;17(2):114～120Sun 工作站生产测井解释系统,是以 SUN GKS 为基本软环境支持,在 SUN 工作站上开发完成的一套生产测井资料解释与处理系统。本文详细叙述了该系统的构成、解释原理、输入输出等,并通过实例说明了该系统的解释结果。     

宽带接入的春天还有多远

中国宽带业务的发展面临诸多问题:内容建设严重滞后于网络建设、缺少盈利的“杀手”业务、服务水平尚未达到宽带需求、恶性竞争产生网络泡沫以及产业环境尚不完善等。要想改善现状,宽带接入建设应采取下列措施:借助政府力量、联合社会力量、准确定位市场、丰富接入手段以及加强技术培训等。     

Processor Utilization Bounds for Real-Time Systems With Precedence Constraints

This paper presents a novel approach to computing tight upper bounds on the processor utilization for general real-time systems where tasks are composed of subtasks and precedence constraints may exist among subtasks of the same task. By careful analysis of preemption effects among tasks, the problem is formulated as a set of linear programming (LP) problems. Observations are made to reduce the number of LP problem instances required to be solved, which greatly improves the computation time of the utilization bounds. Furthermore, additional constraints are allowed to be included under certain circumstances to improve the quality of the bounds.     

Design of a 3780-point IFFT processor for TDS-OFDM

This correspondence presents a design of 3780-point IFFT processor for TDS-OFDM terrestrial DTV transmitter using FPGA. It demonstrates the algorithm design and error analysis of the processor, which can achieve a throughput of 7.56M complex IFFT operations per second. This design meets the signal-to-quantization noise ratio requirement of the TDS-OFDM system. It consists of two FPGA and one dual-port RAM. The data stream pipeline algorithm is implemented     

结构振动控制中压电阻尼技术研究—压电被动阻尼技术（一）

压电阻尼技术有两种类型：压电被动阻尼技术和压电主动阻尼技术。本文对其中的压电被动阻尼技术进行了研究，结果表明：通过给压电元件并联适当的外部电路，可使压电系统具有与粘弹阻尼材料及动力吸振器相似的物理特性。合理配置电路参数，可以实现最优阻尼比。     

改性玻纤增强尼龙610,1010塑料

研究了采用(准)中粘度级尼龙做基体树脂,加入成核剂改善尼龙的结晶过程,提高结晶速率和初始熔融温度;添加光、热氧稳定剂,防止尼龙在成型加工和使用过程中产生降解与老化,提高塑料制品的质量和减少性能的分散性;采用合理的工艺条件,确保添加剂的均匀分散与减少玻纤的磨损,得到适于军工、航空和机电等领域需要的高性能的受力结构工程塑料。     

An electromigration failure model for interconnects under pulsedand bidirectional current stressing

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed     

秦山核电厂蒸汽发生器水位控制试验

简要介绍了蒸汽发生器水位控制系统的运行方式和试验方法。试验项目包括旁通阀控制试验、主给水阀控制试验和旁通阀与主给水阀的切换试验。文中给出了试验结果,即在液位扰动和核动率扰动时,蒸汽发生器液位的变化过程。经过两个月的运行和瞬态试验,证明蒸汽发生器水位控制系统满足设计要求。