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11.
12.
Ming-Xian Chang Tsung-Da Hsieh 《Vehicular Technology, IEEE Transactions on》2008,57(2):859-872
In fast-varying channels, an orthogonal frequency-division multiplexing system needs to insert denser pilot symbols among transmitted symbols in tracking the variation of a channel. However, using denser pilot symbols reduces transmission throughput. In this paper, we propose a pseudopilot algorithm for data detection in fast-varying channels without increasing the pilot density. Our algorithm is based on a regressional model-based least-squares-fitting approach. Within a block of received symbols, we select some data symbols and regard them as pseudopilot symbols. The receiver considers all the possible patterns of the pseudopilots and associates each of them with a data sequence and a corresponding metric. The associated data sequence, whose metric is minimum, is selected as the detected data sequence. Our algorithm is not based on a decision-directed or decision-feedback architecture because the pseudopilots do not come from any detected symbols. The proposed algorithm needs to search all the possible patterns of the pseudopilots, and the complexity may increase with the number of pseudopilots and constellation size. To reduce the number of search, we further propose two modified approaches. The simulation results show that the performance of the proposed algorithms could approach a bit-error probability lower bound that is obtained by letting the receiver know the true values of the pseudopilots. Compared with the linear interpolation method, the proposed algorithm shows obvious improvement in fast-varying channels. The proposed modified approaches could also effectively reduce the number of search while maintaining the performance. We also give the complexity analysis of the proposed algorithm and an approach to determine the degree of the regression polynomial. 相似文献
13.
M. W. Liang T. E. Hsieh S. Y. Chang T. H. Chuang 《Journal of Electronic Materials》2003,32(9):952-956
The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250°C and 400°C by inserting a Sn thin-film interlayer. Experimental results
showed that a double layer of intermetallic compounds (IMCs) η-(Cu0.99Au0.01)6Sn5/δ-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The
activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)6Sn5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm2 could be attained under the bonding condition of 300°C for 20 min. 相似文献
14.
Hsieh-Hung Hsieh Liang-Hung Lu 《Microwave and Wireless Components Letters, IEEE》2006,16(10):552-554
A novel circuit topology for low-phase-noise voltage controlled oscillators (VCOs) is presented in this letter. By employing a PMOS cross-coupled pair with a capacitive feedback, superior circuit performance can be achieved especially at higher frequencies. Based on the proposed architecture, a prototype VCO implemented in a 0.18-/spl mu/m CMOS process is demonstrated for K-band applications. From the measurement results, the VCO exhibits a 510-MHz frequency tuning range at 20GHz. The output power and the phase noise at 1-MHz offset are -3dBm and -111dBc/Hz, respectively. The fabricated circuit consumes a dc power of 32mW from a 1.8-V supply voltage. 相似文献
15.
Jou Y.-D. Hsieh C.-H. Kou C.-M. 《Vision, Image and Signal Processing, IEE Proceedings -》1997,144(4):244-248
The weighted least-squares (WLS) technique has been widely used for the design of digital FIR filters. In the conventional WLS, the filter coefficients are obtained by performing a matrix inverse operation, which needs computation of O(N3). The authors present a new WLS algorithm that introduces an extra frequency response including implicitly the weight function. In the new algorithm, the filter coefficients can be solved just by a matrix vector multiplication. It reduces the computational complexity from O(N3 ) to O(N2) 相似文献
16.
H.‐C. Su F.‐C. Fang T.‐Y. Hwu H.‐H. Hsieh H.‐F. Chen G.‐H. Lee S.‐M. Peng K.‐T. Wong C.‐C. Wu 《Advanced functional materials》2007,17(6):1019-1027
Highly efficient orange and green emission from single‐layered solid‐state light‐emitting electrochemical cells based on cationic transition‐metal complexes [Ir(ppy)2sb]PF6 and [Ir(dFppy)2sb]PF6 (where ppy is 2‐phenylpyridine, dFppy is 2‐(2,4‐difluorophenyl)pyridine, and sb is 4,5‐diaza‐9,9′‐spirobifluorene) is reported. Photoluminescence measurements show highly retained quantum yields for [Ir(ppy)2sb]PF6 and [Ir(dFppy)2 sb]PF6 in neat films (compared with quantum yields of these complexes dispersed in m‐bis(N‐carbazolyl)benzene films). The spiroconfigured sb ligands effectively enhance the steric hindrance of the complexes and reduce the self‐quenching effect. The devices that use single‐layered neat films of [Ir(ppy)2sb]PF6 and [Ir(dFppy)2sb]PF6 achieve high peak external quantum efficiencies and power efficiencies of 7.1 % and 22.6 lm W–1) at 2.5 V, and 7.1 % and 26.2 lm W–1 at 2.8 V, respectively. These efficiencies are among the highest reported for solid‐state light‐emitting electrochemical cells, and indicate that cationic transition‐metal complexes containing ligands with good steric hindrance are excellent candidates for highly efficient solid‐state electrochemical cells. 相似文献
17.
Ming-Chun Hsieh Yean-Kuen Fang Chung-Hui Chen Shuo-Mao Chen Wen-Kuan Yeh 《Electron Devices, IEEE Transactions on》2004,51(3):324-331
In this paper, deep submicron complementary metal-oxide-semiconductor (CMOS) process compatible high-Q suspended spiral on-chip inductors were designed and fabricated. In the design, the electromagnetic solver, SONNET, and the finite element program, ANSYS, were used for electrical characteristics, maximum endurable impact force, and thermal conduction simulations, respectively. Based on the design, suspended spiral inductors with different air cavity structures, i.e., diamond opening, circle opening, triangle opening, and full suspended with pillar supports were developed for various applications. Among these structures, the suspended inductor with pillar support possesses the highest Q/sub max/ (maximum of quality factor) of 6.6 at 2 GHz, the least effective dielectric constant of 1.06, and the lowest endurable impact force 0.184 Newton. On the other hand, the spiral inductor with diamond opening has a lowest Q/sub max/ of 4.3, the largest effective dielectric constant of 3.44 and highest endurable impact force 4 Newton. The former is suitable for station telecommunication applications in which the mechanical vibration is not a serious concern, while the latter can be used for mobile telecommunication applications subject to strong mechanical vibrations. Additionally, the conventional on-chip spiral inductor embraced by SiO/sub 2/ with a dielectric constant of 4 was prepared for comparison and found its Q/sub max/ is 3.8 at 1.2 GHz. 相似文献
18.
Gui-Bin Hsieh Ming-Huang Chen Kin-Lu Wong 《Electronics letters》1998,34(12):1170-1171
A novel technique for obtaining dual-band circular polarisation (CP) radiation of a single-feed circular microstrip antenna is proposed and demonstrated. By embedding two pairs of arc-shaped slots of proper lengths close to the boundary of a circular patch, and protruding one of the arc-shaped slots with a narrow slot, the circular microstrip antenna can perform dual-band CP radiation using a single probe feed. Details of the antenna design and experimental results are presented 相似文献
19.
This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy
thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed
in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form In2O3/Cu/SiO2 were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong
copper diffraction peaks were detected from the as-deposited film, and an In2O3 phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation
of In2O3/Cu/SiO2 improved the resistivity, adhesion to SiO2, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C,
and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below
2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display
gate electrodes and copper metallization in integrated circuits. 相似文献
20.
Hung-Tse Chen Hsieh S.-I. Chrong-Jung Lin Ya-Chin King 《Electron Device Letters, IEEE》2007,28(6):499-501
A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal-oxide-nitride-oxide-silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide-nitride-oxide stack gate dielectric, and a metal gate is integrated into a NAND array. A NAND test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications 相似文献