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121.
A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is realized. The proposed process showed improved on-resistance characteristics of the device with increasing cell density and the cost-effective production capability due to the lesser number of processing steps. By using this process technique, a remarkably increased high density (100 Mcell/inch2) trench gate power MOSFET with a cell pitch of 2.5 μm could be effectively realized. The fabricated device had a low specific on-resistance of 1.1 mΩ-cm2 with a breakdown voltage of -36 V  相似文献   
122.
We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation  相似文献   
123.
We propose an advanced structure of optical subassembly (OSA) for packaging of the vertical-cavity surface-emitting laser (VCSEL) array, using (111) facet mirror of the V-groove ends formed in a silicon optical bench (SiOB) and angled fiber apertures. The feature of our OSA can provide a low optical crosstalk between neighboring channels, a low feedback reflection, and a large misalignment tolerance along the V-groove. We describe the optimized design of fiber angle, VCSEL position, and fiber position. The fabricated OSA structure consists of 12 channels of angled fiber array, 54.7/spl deg/ V-grooves, Au-coated mirrors on (111) end facet of the V-grooves, and flip-chip-bonded VCSEL array on a SiOB. In this structure, the beam emitted from the VCSEL is deflected at the 54.7/spl deg/ mirror of (111) end facet and propagated into the angled fiber. The angled fiber array was polished by 57/spl deg/. Fabricated OSAs showed a coupling efficiency of 30%-50% that is 25 times larger than that obtained from an OSA with a vertically flat fiber array. Our OSA showed large misalignment tolerance of about 90 /spl mu/m along the longitudinal direction in the V-groove. We fabricated a parallel optical transmitter module using the OSA and demonstrated 12 channels /spl times/2.5 Gb/s data transmission with a clear eye diagram.  相似文献   
124.
A new spreading scheme and an accompanying blind adaptive receiver structure are proposed for direct-sequence spread-spectrum multiple-access communications in a slowly-varying, frequency-selective fading channel. Each user's spreading sequence is given by the Kronecker product of a long-period pseudonoise (PN) sequence, which is accurately modeled by a random sequence, and a short-length deterministic signature code. This spreading scheme bridges the gap between pure PN spreading and pure short-code spreading schemes. It is shown that with this spreading scheme, the channel response to the desired signal component is easily estimated without relying on the spectral decomposition of the signal correlation matrix. With the estimate of the channel response, the receiver suppresses interference based on the maximum signal-to-interference ratio criterion. The blind adaptive receiver requires only coarse timing information and a priori knowledge of the desired user's PN sequence for adaptation. Numerical results show that the adaptive receiver significantly suppresses interference by successfully estimating the channel response and the interference statistics with a low computational complexity. An extension to spatio-temporal processing using an array antenna is also discussed  相似文献   
125.
We demonstrate a broad-band silica-based erbium-doped fiber amplifier (EDFA) with double-pass configuration. The signal gain and noise figure are obtained more than 24 dB and less than 6 dB, respectively, for 1526-1562 nm and 1569-1605 nm. The same signal gain can be achieved with 53% less pump power and 45% shorter erbium-doped fiber length, compared to a conventional parallel type EDFA. Furthermore, the noise figure and power conversion efficiency are improved for the wavelength range  相似文献   
126.
We report the synthesis, characterization and behavior in field-effect transistors of non-functionalized soluble diketopyrrolopyrrole (DPP) core with only a solubilizing alkyl chain (i.e. –C16H33 or –C18H37) as the simplest p-channel semiconductor. The characteristics were evaluated by UV–vis and fluorescence spectroscopy, X-ray diffraction, cyclic voltammetry (CV), thermal analysis, atomic force microscopy (AFM) and density functional theory (DFT) calculation. For top-contact field-effect transistors, two types of active layers were prepared either by a solution process (as a 1D-microwire) or thermal vacuum deposition (as a thin-film) on a cross-linked poly(4-vinylphenol) gate dielectric. All the devices showed typical p-channel behavior with dominant hole transports. The device made with 1D-microwiress of DPP-R18 showed field-effect mobility in the saturation region of 1.42 × 10?2 cm2/V s with ION/IOFF of 1.82 × 103. These findings suggest that the non-functionalized soluble DPP core itself without any further functionalization could also be used as a p-channel semiconductor for low-cost organic electronic devices.  相似文献   
127.
Electroluminescence (EL) of organic and polymeric fluorescent materials programmable in the luminance is extremely useful as a non‐volatile EL memory with the great potential in the variety of emerging information storage applications for imaging and motion sensors. In this work, a novel non‐volatile EL memory in which arbitrarily chosen EL states are programmed and erased repetitively with long EL retention is demonstrated. The memory is based on utilizing the built‐in electric field arising from the remnant polarization of a ferroelectric polymer which in turn controls the carrier injection of an EL device. A device with vertically stacked components of a transparent bottom electrode/a ferroelectric polymer/a hole injection layer/a light emitting layer/a top electrode successfully emits light upon alternating current (AC) operation. Interestingly, the device exhibits two distinctive non‐volatile EL intensities at constant reading AC voltage, depending upon the programmed direct current (DC) voltage on the ferroelectric layer. DC programmed and AC read EL memories are also realized with different EL colors of red, green and blue. Furthermore, more than four distinguishable EL states are precisely addressed upon the programmed voltage input each of which shows excellent EL retention and multiple cycle endurance of more than 105 s and 102 cycles, respectively.  相似文献   
128.
This paper investigates relationships between community characteristics and levels of knowledge and participation examined at both the individual and the community levels. This research extends the knowledge gap concept to a parallel phenomenon, the participation gap. Results from the Social Capital Benchmark Survey 2000 showed that community density, education, and cohesion were significant positive predictors of knowledge but less consistent predictors of participation at the individual level. At the community level, relationships were even stronger, though cohesion was associated with higher mean levels of participation and reduced participation gaps, whereas population density was associated with lower levels of participation and increased gaps.  相似文献   
129.
Two-phase boosted voltage generator for low-voltage DRAMs   总被引:1,自引:0,他引:1  
A two-phase boosted voltage (V/sub PP/) generator circuit was proposed for use in gigabit DRAMs. It reduced the maximum gate-oxide voltage of pass transistor and the lower limit of supply voltage to V/sub PP/ and V/sub TN/, respectively, while those for the conventional charge-pump circuit are V/sub PP/+V/sub DD/ and 1.5 V/sub TN/ respectively. Also, the pumping current was increased in the new circuit. The newly proposed two-phase V/sub PP/ charge-pump circuit worked successfully at V/sub DD/ down to 0.8 V by eliminating the threshold voltage loss of the control pulse generator and was tested successfully in a 0.16-/spl mu/m test chip using triple-well CMOS technology.  相似文献   
130.
This paper presents a new driving scheme for the improvement and flexibility of a color temperature without sacrificing a peak white luminance using an independent control of the red (R), green (G), and blue (B) luminance in an alternating current plasma display panel (AC-PDP). The independent control for the R, G, and B emissions can be achieved by selective application of the various narrow auxiliary pulses to the R, G, and B address electrodes during a sustain-period. The auxiliary pulses can control the luminance levels independently from the R, G, and B cells by forming the fast and efficient plasma or by slight disturbing of the wall charge accumulation. By the application of various auxiliary pulses leading to the simultaneous control of each color's luminance, it is observed that the new driving scheme can improve the color temperature from 5396 K to 10 980 K in a 4-in test panel with almost the same peak white luminance as that of the conventional driving scheme.  相似文献   
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