Investigation of organic n-type field-effect transistor performance on the polymeric gate dielectrics

We report a copper hexadecafluorophthalocyanine (F₁₆CuPc) based n-type organic field-effect transistor (OFET) with polymeric gate dielectrics with different physical/electrical properties. The gate dielectrics are four types of cross-linked poly(4-vinylphenol) and newly prepared poly(4-phenoxy methyl styrene) and those are characterized based on surface tension, leakage current and capacitance. The performance of F₁₆CuPc OFETs with those gate dielectrics was compared. We found that the composition of the gate dielectrics and the interfacial interaction of F₁₆CuPc with the gate dielectric play a decisive role in the performance of OFETs. The effect of physical/electrical properties, composition and processing condition of the gate dielectrics on the device performance was investigated.     

Fabrication of Al matrix composite reinforced with submicrometer-sized Al<Subscript>2</Subscript>O<Subscript>3</Subscript> particles formed by combustion reaction between HEMM Al and V<Subscript>2</Subscript>O<Subscript>5</Subscript> composite particles during sintering

To fabricate an Al-V matrix composite reinforced with submicron-sized Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases, high energy mechanical milling (HEMM) and sintering were employed. By increasing the milling time, the size of mechanically milled powder was significantly reduced. In this study, the average powder size of 59 μm for Al, and 178 μm for V₂O₅ decreased with the formation of a new product, Al-Al₂O₃-Al_xV_y, with a size range from 1.3 μm to 2.6 μm formed by the in-situ combustion reaction during sintering of HEM milled Al and V₂O₅ composite powders. The in-situ reaction between Al and V₂O₅ during the HEMM and sintering transformed the Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases. Most of the reduced V reacted with excess the Al to form Al_xV_y (Al₃V, Al₁₀V) with very little V dissolved into Al matrix. By increasing the milling time and weight percentage of V₂O₅, the hardness of the Al-Al₂O₃-Al_xV_y composite sintered at 1173 K increased. The composite fabricated with the HEMM Al-20wt.%V₂O₅ composite powder and sintering at 1173 K for 2 h had the highest hardness.     

Cooperative detection and protection for Interest flooding attacks in named data networking

Named data networking (NDN) is a new emerging architecture for future network, which may be a substitute of the current TCP/IP‐based network, for the content‐oriented data request mode becoming the future trend of development. The security of NDN has attracted much attention, as an implementation of next‐generation Internet architecture. Although NDN is immune to most current attack, it cannot resist the distributed denial of service like attack – Interest flooding attack (IFA) – effectively. IFA takes advantages of the forwarding mechanism of NDN, flooding a large number of malicious Interest packets at quite a high rate, and exploits the network resources, which may cause the paralysis of the network. Taking into account the severity of the destruction, we propose an algorithm to counter such new type of attack. We analyze three properties of IFA, and use them to judge and filter Interest packets. Vector space model and Markov model are used in our method to realize a cooperative detection. Meanwhile, we present the retransmission forwarding mechanism to ensure legitimate user request. The ndnSIM module of ns3 is used for the corresponding simulation, and results of the simulation will be given to show the effectiveness of our algorithm. Copyright © 2014 John Wiley & Sons, Ltd.     

Unprecedented Homoleptic Bis‐Tridentate Iridium(III) Phosphors: Facile,Scaled‐Up Production,and Superior Chemical Stability

Bis‐tridentate Ir(III) metal complexes are expected to show great potential in organic light‐emitting diode (OLED) applications due to the anticipated, superb chemical and photochemical stability. Unfortunately, their exploitation has long been hampered by lack of adequate methodology and with inferior synthetic yields. This hurdle can be overcome by design of the first homoleptic, bis‐tridentate Ir(III) complex [Ir(pzpyph)(pz^Hpyph)] ( 1 ), for which the abbreviation (pzpyph)H (or pz^Hpyph) stands for the parent 2‐pyrazolyl‐6‐phenyl pyridine chelate. After that, methylation and double methylation of 1 afford the charge‐neutral Ir(III) complex [Ir(pzpyph)(pz^Mepyph)] ( 2 ) and cationic complex [Ir(pz^Mepyph)₂][PF₆] ( 3 ), while deprotonation of 1 gives formation of anionic [Ir(pzpyph)₂][NBu₄] ( 4 ), all in high yields. These bis‐tridentate Ir(III) complexes 2 – 4 are highly emitted in solution and solid states, while the charge‐neutral 2 and corresponding t ‐butyl substituted derivative [Ir(pzpy^Buph)(pz^Mepy^Buph)] ( 5 ) exhibit superior photostability versus the tris‐bidentate references [Ir(ppy)₂(acac)] and [Ir(ppy)₃] in toluene under argon, making them ideal OLED emitters. For the track record, phosphor 5 gives very small efficiency roll‐off and excellent overall efficiencies of 20.7%, 66.8 cd A^?1, and 52.8 lm W^?1 at high brightness of 1000 cd m^?2. These results are expected to inspire further studies on the bis‐tridentate Ir(III) complexes, which are judged to be more stable than their tris‐bidentate counterparts from the entropic point of view.     

Two New Convolutions for the Fractional Fourier Transform

In this paper we introduce two novel convolutions for the fractional Fourier transforms, and prove natural algebraic properties of the corresponding multiplications such as commutativity, associativity and distributivity, which may be useful in signal processing and other types of applications. We analyze a consequent comparison with other known convolutions, and establish necessary and sufficient conditions for the solvability of associated convolution equations of both the first and second kind in \(L^1({\mathbb {R}})\) and \(L^2 ({\mathbb {R}})\) spaces. An example satisfying the sufficient and necessary condition for the solvability of the equations is given at the end of the paper.     

New look on relay selection strategies for full-duplex multiple-relay NOMA over Nakagami-m fading channels

Wireless Networks - By removing the orthogonal use of radio-resources, non-orthogonal multiple access (NOMA) has been introduced to improve the spectral efficiency of fifth generation (5G) and...     

Rate-distortion optimized tree-structured compression algorithms for piecewise polynomial images.

This paper presents novel coding algorithms based on tree-structured segmentation, which achieve the correct asymptotic rate-distortion (R-D) behavior for a simple class of signals, known as piecewise polynomials, by using an R-D based prune and join scheme. For the one-dimensional case, our scheme is based on binary-tree segmentation of the signal. This scheme approximates the signal segments using polynomial models and utilizes an R-D optimal bit allocation strategy among the different signal segments. The scheme further encodes similar neighbors jointly to achieve the correct exponentially decaying R-D behavior (D(R) - c(o)2(-c1R)), thus improving over classic wavelet schemes. We also prove that the computational complexity of the scheme is of O(N log N). We then show the extension of this scheme to the two-dimensional case using a quadtree. This quadtree-coding scheme also achieves an exponentially decaying R-D behavior, for the polygonal image model composed of a white polygon-shaped object against a uniform black background, with low computational cost of O(N log N). Again, the key is an R-D optimized prune and join strategy. Finally, we conclude with numerical results, which show that the proposed quadtree-coding scheme outperforms JPEG2000 by about 1 dB for real images, like cameraman, at low rates of around 0.15 bpp.     

Performance analysis and power allocation for decode‐and‐forward cooperative communications over Rician fading channel

This paper derives the asymptotic symbol error rate (SER) and outage probability of decode‐and‐forward (DF) cooperative communications over Rician fading channels. How to optimally allocate the total power is also addressed when the performance metric in terms of SER or outage probability is taken into consideration. Analysis reveals the insights that Rician factor has a great impact on the system performance as compared with the channel variance, and the relay–destination channel quality is of importance. In addition, the source–relay channel condition is irrelevant to the optimal power allocation design. Simulation and numerical evaluation substantiate the tightness of the asymptotic expressions in the high‐SNR regions and demonstrate the accuracy of our theoretical analysis. Copyright © 2011 John Wiley & Sons, Ltd.     

A Novel Pt/In0.52Al0.48As Schottky Diode-Type Hydrogen Sensor

On the basis of a Pt/In_0.52Al_0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In_0.52Al_0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H₂/air gas and V_R=-0.5 V at 30 degC), large current variation of 310 muA (under the 1% H₂/air gas and V_R=-5 V at 200 degC), widespread reverse-voltage regime (0~-5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Omega, respectively (under the 1% H₂/air gas at 30 degC). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H₂/air and 30 degC-250 degC, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications