Room-Temperature-Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification

Reversible metal-filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware-implementation. However, uncontrollable filament-formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with 3D ion transport channels that can provide unprecedentedly high reliability and robustness is demonstrated. This architecture is realized by a laser-assisted photo-thermochemical process, compatible with the back-end-of-line process and even applicable to a flexible format. These superior characteristics also lead to the proposal of a practical adaptive learning rule for hardware neural networks that can significantly simplify the voltage pulse application methodology even with high computing accuracy. A neural network, which can perform the biological tissue classification task using the ultrasound signals, is designed, and the simulation results confirm that this practical adaptive learning rule is efficient enough to classify these weak and complicated signals with high accuracy (97%). Furthermore, the proposed RSM can work as a diffusive-memristor at the opposite voltage polarity, exhibiting extremely stable threshold switching characteristics. In this mode, several crucial operations in biological nervous systems, such as Ca²⁺ dynamics and nonlinear integrate-and-fire functions of neurons, are successfully emulated. This reconfigurability is also exceedingly beneficial for decreasing the complexity of systems—requiring both drift- and diffusive-memristors.     

Structure‐Properties Relationship in Iron Oxide‐Reduced Graphene Oxide Nanostructures for Li‐Ion Batteries

Non‐aqueous sol‐gel routes involving the reaction of metal oxide precursors in organic solvents (e.g., benzyl alcohol) at moderate temperature and pressure, offer advantages such as high purity, high reproducibility and the ability to control the crystal growth without the need of using additional ligands. In this paper, a study carried out on a series of iron oxide/reduced graphene oxide composites is presented to elucidate a structure‐properties relationship leading to an improved electrochemical performance of such composites. Moreover, it is demonstrated that the easy production of the composites in a variety of temperature and composition ranges, allows a fine control over the final particles size, density and distribution. The materials obtained are remarkable in terms of the particle's size homogeneity and dispersion onto the reduced graphene oxide surface. Moreover, the synthesis method used to obtain the graphene oxide clearly affects the performances of the final composites through the control of the restacking of the reduced graphene oxide sheets. It is shown that a homogeneous and less defective reduced graphene oxide enables good electrochemical performances even at high current densities (over 500 mAh/g delivered at current densities as high as 1600 mA/g). The electrochemical properties of improved samples reach the best compromise between specific capacity, rate capability and cycle stability reported so far.     

Variable VCC design techniques forbattery-operated DRAMs

Wide-voltage-range DRAMs with extended data retention are desirable for battery-operated or portable computers and consumer devices. The techniques required to obtain wide operation, functionality, and performance of standard DRAMs from 1.8 V (two NiCd or alkaline batteries) to 3.6 V (upper end of LVTTL standard) are described. Specific techniques shown are: (1) a low-power and low-voltage reference generator for detecting V_CC level; (2) compensation of DC generators, V_BB and V_PP, for obtaining high speed at reduced voltages; (3) a static word-line driver and latch-isolation sense amplifier for reducing operating current; and (4) a programmable V_CC variable self-refresh scheme for obtaining maximum data retention time over a full operating range. A sub-50-ns access time is obtained for a 16 M DRAM (2 M×8) by simulation     

Monolithic arrays of surface emitting laser NOR logic devices

Monolithic, cascadable, laser-logic-device arrays have been realized and characterized. The monolithic surface-emitting laser logic (SELL) device consists of an AlGaAs superlattice lasing around 780 nm connected to a heterojunction phototransistor (HPT) in parallel and a resistor in series. Arrays up to 8×8 have been fabricated, and 2×2 arrays show uniform characteristics. The optical logic output is switched off with 40 μW incident optical input     

A fast parallel squarer based on divide-and-conquer

Fast and small squarers are needed in many applications such as image compression. A new family of high-performance parallel squarers based on the divide-and-conquer method is reported. Our main result was realized for the basis cases of the divide-and-conquer recursion by using optimized n-bit primitive squarers, where n is in the range of two to six. This method reduced the gate count and provided shorter critical paths. A chip implementing an 8-b squarer was designed, fabricated, and successfully tested, resulting in 24 million operations per second (MOPS) using a 2-μm CMOS fabrication technology. This squarer had two additional features: increased number of squaring operations per unit circuit area and the potential for reduced power consumption per squaring operation     

A Novel and Efficient Feature Extraction Method for Iris Recognition

With a growing emphasis on human identification, iris recognition has recently received increasing attention. Iris recognition includes eye imaging, iris segmentation, verification, and so on. In this letter, we propose a novel and efficient iris recognition method which employs a cumulative‐sum‐based grey change analysis. Experimental results demonstrate that the proposed method can be used for human identification in efficient manner.     

In Vivo Photoacoustic Imaging of Livers Using Biodegradable Hyaluronic Acid‐Conjugated Silica Nanoparticles

The diagnosis of liver diseases is generally carried out via ultrasound imaging, computed tomography, and magnetic resonance imaging. The emerging photoacoustic imaging is an attractive alternative to diagnose even early stage of liver diseases providing high‐resolution anatomical and functional information in deep tissue noninvasively. However, the liver has insufficient photoacoustic contrast due to low optical absorbance in the near‐infrared windows. Here, a new hyaluronate–silica nanoparticle (HA–SiNP) conjugate for liver‐specific delivery and imaging for the diagnosis of liver diseases is developed. The HA–SiNP conjugates show high liver‐specific targeting efficiency, strong optical absorbance near‐infrared windows, excellent biocompatibility, and biodegradability. The liver‐specific targeting efficiency is verified by in vitro cellular uptake test, and in vivo and ex vivo photoacoustic imaging. In vivo photoacoustic imaging shows that photoacoustic amplitude in the liver injected with HA–SiNP conjugates is 4.4 times higher than that of the liver injected with SiNP. The biocompatibility and biodegradability of HA–SiNP conjugates are verified by cell viability test, optical spectrum analysis of urine, and inductively coupled plasma‐mass spectroscopy (ICP‐MS) analysis. Taken together, HA–SiNP conjugates may be developed as a promising liver targeted photoacoustic imaging contrast agent and liver‐targeted drug delivery agent.     

Passive alignment method of polymer PLC devices by using a hot embossing technique

A novel fabrication process using a hot embossing technique has been developed for micromechanical passive alignment of polymer planar lightwave circuit (PLC) devices. With only one step of embossing, single-mode waveguide straight channels and micropedestals for passive aligning are simultaneously defined on a polymer thin film with an accuracy of /spl plusmn/0.5 /spl mu/m. This process reduces the steps for fabricating alignment structures. A fabricated polymer PLC chip and fibers are combined on a v-grooved silicon optical bench (SiOB) in a flip-chip manner. The process provides a coupling loss as low as 0.67 dB per coupling face and a cost-effective packaging solution for various polymer PLC devices.     

Adaptive mode decision for H.264 encoder

An adaptive mode decision algorithm is presented, with rate-distortion optimisation that reduces the complexity of the H.264 encoder without loss of image quality and compression ratio. The proposed algorithm uses the property of an all-zero coefficients block that is produced by quantisation and coefficient thresholding to effectively skip unnecessary modes. Experimental results show that the speed of the adaptive mode decision algorithm is two times faster than the full-mode decision algorithm of the JM72 reference encoder, without any coding loss.     

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-/spl kappa/ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO/sub 2/+Hf/spl rarr/HfO/sub 2/+Ge and 3GeO/sub 2/+4Al/spl rarr/2Al/sub 2/O/sub 3/+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO/sub 2/, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10/sup 6/ rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices.