The effects of process conditions and substrate on copper MOCVD using liquid injection of (hfac)Cu(vtmos)

Copper MOCVD (metalorganic chemical vapor deposition) using liquid injection for effective delivery of the (hfac)Cu(vtmos) [1,1,1,5,5,5-hexafluoro-2,4-pentadionato(vinyltrimethoxysilane) copper(I)] precursor has been performed to clarify growth behavior of copper films onto TiN, <100> Si, and Si₃N₄ substrates. Especially, we have studied the influences of process conditions and the substrate on growth rates, impurities, microstructures, and electrical characteristics of copper films. As the reactor pressure was increased, the growth rate was governed by a pick-up rate of (hfac)Cu(vtmos) in the vaporizer. The apparent activation energy for copper growth over the surface-reaction controlled regime from 155°C to 225°C was in the range 12.7–32.5 kcal/mol depending upon the substrate type. It revealed that H₂ addition at 225°C substrate temperature brought about a maximum increase of about 25% in the growth rate compared to pure Ar as the carrier gas. At moderate deposition temperatures, the degree of a <111> preferred orientation for the deposit was higher on the sequence of <Cu/Si<Cu/TiN<Cu/Si₃N₄. The relative impurity content within the deposit was in the range 1.1 to 1.8 at.%. The electrical resistivity for the Cu films on TiN illustrated three regions of the variation according to the substrate temperature, so the deposit at 165°C had the optimum resistivity value. However, the coarsened microstructures of Cu on TiN prepared above 275°C gave rise to higher electrical resistivities compared to those on Si and Si₃N₄ substrates.     

Dual-wavelength cascaded Raman fibre laser

Dual-wavelength lasing at 1480 and 1500 nm has been demonstrated from a cascaded Raman fibre laser with a WDM coupler and two pairs of Bragg gratings. Intensity-adjustable, wavelength-tunable laser operation was achieved by tensile stress wavelength tuning of the gratings     

一种基于Ag-Sn等温凝固的圆片键合技术

研究了用Ag-Sn作为键合中间层的圆片健合。相对于成熟的Au-Sn键合系统(典型键合温度是280℃),该系统可以提供更低成本、更高键合后分离(De-Bonding)温度的圆片级键合方案。使用直径为100mm硅片,盖板硅片上溅射多层金属Ti/Ni/Sn/Au,利用Lift-off工艺来形成图形。基板硅片上溅射Ti/Ni/Au/Ag。硅片制备好后,将盖板和基板叠放在一起送入键合机进行键合。键合过程在N2气氛中进行,键合过程中不需要使用助焊剂。研究了不同键合参数,如键合压力、温度等对键合结果的影响。剪切强度测试表明样品的剪切强度平均在55.17MPa。TMA测试表明键合后分离温度可以控制在500℃左右。He泄漏测试证明封接的气密性极好。     

A fast full search motion estimation algorithm using sequentialrejection of candidates from hierarchical decision structure

We propose a new as well as fast full search (FS) motion estimation algorithm for video coding. The computational reduction comes from sequential rejection of impossible candidates with derived formula and subblock norms. Our algorithm reduces more the computations than the FS motion estimation algorithms previously developed     

A Distributed Cooperative MAC Protocol for QoS Improvement and Mobility Support in WiMedia Networks

A Distributed Medium Access Control (D-MAC) protocol based on UWB for high-rate Wireless Personal Area Networks is specified by the WiMedia Alliance. D-MAC protocol is suitable for ubiquitous connection in home networks, military/medical applications due to its inexpensive cost, low power consumption, high data rate, and distributed approach. In contrast to IEEE 802.15.3, D-MAC makes all devices have the same functionality. And its networks are self-organized and provide devices with functions such as access to the medium, channel allocation to devices, data transmission, quality of service and synchronization in a distributed manner. D-MAC fundamentally removes the problems of the centralized MAC approach revealed at IEEE 802.15.3 MAC by adopting a distributed architecture. However, the current D-MAC can’t prevent QoS degradations, occurred by mobile nodes with low data rate due to bad channel status, which cause critical problems in QoS provisioning to isochronous streams and mobile applications. Therefore, we propose a distributed cooperative MAC protocol for multi-hop WiMedia networks using virtual MIMO links. Based on instantaneous Channel State Information among WiMedia devices, our proposed protocol can intelligently select the transmission path with higher data rate to provide advanced QoS with minimum delay for real-time multimedia streaming services.     

Self-aligned n-channel GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization

In this work, using Si interface passivation layer (IPL), we demonstrate n-MOSFET on p-type GaAs by varying physical-vapor-deposition (PVD) Si IPL thickness, S/D ion implantation condition, and different substrate doping concentration and post-metal annealing (PMA) condition. Using the optimized process, TaN/HfO₂/GaAs n-MOSFETs made on p-GaAs substrates exhibit good electrical characteristics, equivalent oxide thickness (EOT) (∼3.7 nm), frequency dispersion (∼8%) and high maximum mobility (420 cm²/V s) with high temperature PMA (950 °C, 1 min) and good inversion.     

Low-cost broadband millimetre-wave array antenna using waveguide/microstrip feed network and slot pair

A low-cost broadband millimetre-wave planar 30/spl times/30 array antenna is presented. The antenna is fed by a microstrip feed network in the H-plane to decrease fabrication costs, and a waveguide feed network in the E-plane to reduce the feed line loss. The waveguide and microstrip feed network are coupled through the proposed slot pair. The slots are placed one quarter of a guided-wavelength distance apart, so that the reflected waves from the slots cancel each other. A conductive bar is laid above the slots to increase the coupling, which increases the antenna gain by about 1 dBi. The maximum gain is 30.5 dBi at 41.5 GHz. The measured bandwidth is as broad as 7.1%.     

Simultaneous Formation of Ohmic Contacts on p +- and n +-4H-SiC Using a Ti/Ni Bilayer

In this work, Ti/Ni bilayer contacts were fabricated on both p ⁺- and n ⁺-4H-SiC formed by ion implantation, and the effects of the Ti interlayer on the contact resistance and interfacial microstructure were studied. Adoption of a thin (10 nm) Ti interlayer resulted in specific contact resistance of 4.8 μΩ cm² and 1.3 mΩ cm² on n ⁺- and p ⁺-4H-SiC, respectively, comparable to the values for contacts using only Ni. Moreover, contacts using Ti/Ni provide a flat and uniform interface between Ni₂Si and SiC, whereas discontinuous, agglomerated Ni₂Si islands are formed without the use of a Ti interlayer. In addition, the Ti interlayer was demonstrated to effectively dissociate the thin oxide film on SiC, which is advantageous for low-resistance, reliable ohmic contact formation. In summary, use of a Ti/Ni bilayer is a promising solution for one-step formation of ohmic contacts on both p ⁺- and n ⁺-4H-SiC, being especially suitable for SiC n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabrication.     

LLC谐振转换器在轻载条件下增益失真的考虑事项

近来,尽管LLC谐振转换器设计颇为复杂,但由于具有某些出色的优势而得到很多关注。比如,可通过零电压开关（ZVS）实现高效率,在所有负载条件下工作频率变化范围很窄。LLC谐振转换器广泛用于家电、街灯充电器及其他各种电气设备。大家知道,LLC谐振转换器通过改变工作频率来调节输出电压。一般而言,电压转换比,也就是ZVS工作区域中的增益值,理论上随工作频率的增加而减小。     

PR-MAC: A practical approach for exploiting relay transmissions in multi-rate WLANs

In this paper, we propose a new MAC protocol, called proxy relay-enabled MAC (PR-MAC), to improve the capacity of multi-rate WLANs. PR-MAC introduces a new entity called Proxy Relay Point (PRP), which serves as a relay between the AP and stations. The cooperation of the AP with PRP replaces direct transmissions for low-rate stations with fast two-hop transmissions while the stations think that they communicate directly with the AP. Our experiment and simulation results showed that PR-MAC can significantly improve the throughput of legacy stations without any modification on the MAC operation of the stations.