Fabrication of Ordered Nanostructured Arrays Using Poly(dimethylsiloxane) Replica Molds Based on Three‐Dimensional Colloidal Crystals

Hexagonally arrayed structures of colloidal crystals with uniform surface are a good candidate for master molds to be used in soft lithography. Here, the fabrication of periodically arrayed nanostructures using poly(dimethylsiloxane) (PDMS) molds based on three‐dimensionally (3D) ordered colloidal crystals is reported. A robust, high‐quality 3D colloidal‐crystal master molds is prepared using the colloidal suspension containing a water‐soluble polymer. The surface patterns of the 3D colloidal crystals can then be transferred onto a polymer film via soft lithography, by means of the replication of the surface pattern with PDMS. Various hexagonally arrayed nanostructure patterns can be fabricated, including close‐packed and non‐close‐packed 2D arrays and honeycomb structures by the structural modification of the 3D colloidal‐crystal templates. The replicated hexagonally arrayed structures can also be used as templates for producing colloidal crystals with 2D superlattices.     

Pixel‐Structured Scintillator with Polymeric Microstructures for X‐Ray Image Sensors

We introduce a pixel‐structured scintillator realized on a flexible polymeric substrate and demonstrate its feasibility as an X‐ray converter when it is coupled to photosensitive elements. The sample was prepared by filling Gd₂O₂S:Tb scintillation material into a square‐pore‐shape cavity array fabricated with polyethylene. For comparison, a sample with the conventional continuous geometry was also prepared. Although the pixelated geometry showed X‐ray sensitivity of about 58% compared with the conventional geometry, the resolving power was improved by about 70% above a spatial frequency of 3 mm^?1. The spatial frequency at 10% of the modulation‐transfer function was about 6 mm^?1.     

ZnO-Based Low-Voltage Inverter With Quantum-Well-Structured Nanohybrid Dielectric

We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/inorganic nanohybrid dielectric, which contains AlO_x/TiO_x/AlO_x in triple-layer structure. The inverter shows a high voltage gain of ~20 under the supply voltage (V_DD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlO_x-based barrier and trapped in the TiO_x-based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.     

Highly Reliable Charge Trap-Type Organic Non-Volatile Memory Device Using Advanced Band-Engineered Organic-Inorganic Hybrid Dielectric Stacks

With the recent interest in data storage in flexible electronics, highly reliable charge trap-type organic-based non-volatile memory (CT-ONVM) has attracted much attention. CT-ONVM should have a wide memory window, good endurance, and long-term retention characteristics, as well as mechanical flexibility. This paper proposed CT-ONVM devices consisting of band-engineered organic–inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5-trimethyl-1,3,5,-trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10⁴ cycles, and charge retention of up to 71% after 10⁸ s even under the 2% strained condition. The CT-ONVM device using the hybrid dielectric stacks outperforms other organic-based charge trap memory devices and is even comparable in performance to conventional inorganic-based poly-silicon/oxide/nitride/oxide/silicon structures devices. The CT-ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.     

High Performance β-Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Gallium trioxide, β-Ga₂O₃, has been recently studied due to its promising semiconducting properties as active material in transistors or Schottky diodes. Transistors with β-Ga₂O₃ channels are mostly metal oxide field effect transistors (MOSFET), and they show very negative threshold voltages (V_th) in general. Metal semiconductor field effect transistors (MESFETs) with top gate are also reported with less negative V_th. Still, β-Ga₂O₃ MESFETs are only a few. Here, bottom gate architecture β-Ga₂O₃ MESFETs using transition metal dichalcogenide (TMD) NbS₂ and TaS₂ are reported. Due to the large work functions of those metallic TMDs, the MESFETs display minimum subthreshold swing of 61 mV dec⁻¹, small V_th of −1.2 V, minimum OFF I_D of ≈100 fA, and maximum ON/OFF current ratio of ≈10⁸. Both β-Ga₂O₃ Schottky diodes with TaS₂ and NbS₂ display good junction stability even after 300 °C measurements in 10 mTorr vacuum. When the β-Ga₂O₃ MESFET with TaS₂ gate is integrated as a switching FET into an organic light emitting diode (OLED) circuit, it demonstrates long-term leakage endurance performance, maintaining an OLED brightness higher than 58% of the initial intensity after 100 s passes since the ON-switching point, which is even superior to the performance of conventional a-IGZO MOSFET switch.     

CdSe-sensitized inorganic–organic heterojunction solar cells: The effect of molecular dipole interface modification and surface passivation

CdSe-sensitized heterojunction solar cells composed of mesoscopic TiO₂/CdSe/P3HT (poly-3-hexylthiophene) were constructed, and the negative molecular dipole of 4-methoxybenzenethiol (MBT) and the ZnS passivation layer were used as interface modifiers to improve device performance. Through the interface modification between TiO₂/CdSe and P3HT using MBT and by ZnS surface passivation, the power conversion efficiency of the modified solar cell was greatly enhanced from 1.02% to 1.62% under 1 sun illumination.     

Improved photovoltaic performance by enhanced crystallinity of poly(3-hexyl)thiophene

The packing effects induced by the hydrophilic ethylene glycol oligomer side chains occurred in a P3HT:PC₆₁BM mixture upon the addition of small amounts of BP93 (containing 7 mol% PEGT blocks), leading to an enhanced crystallinity among the P3HT molecules, even in a P3HT:PC₆₁BM blend. The enhanced crystallinity improved the charge transport and current density (8.3–11.1 mA/cm²) and increased the power conversion efficiency (3.1–3.9%) in an organic solar cell.     

Cyclic delay diversity with frequency domain turbo equalization for uplink fast fading channels

Cyclic delay diversity (CDD) is an attractive diversity technique due to its low complexity and compatibility to existing wireless communication systems. This letter proposes a CDD with frequency domain turbo equalization (FDTE) for single carrier (SC) transmission, in order to achieve the full spatial diversity of frequency-selective multi-antenna channels. The frequency diversity inherent in SC is picked up from the increased channel selectivity of CDD. The noise or intersymbol interference enhanced by equalization for highly selective channels is then mitigated through applying FDTE at the receiver. Simulation results show that the performance of proposed system approaches the corresponding orthogonal spacetime block coding (STBC) system in slowly fading channels without any data rate loss, and considerably outperforms the STBC system in fast fading channels.     

Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.