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31.
The measurement of the effects of external optical feedback on the spectra of VCSELs (vertical-cavity surface-emitting lasers) is reported. It is surprising that VCSELs have a sensitivity to optical feedback comparable to that of conventional edge-emitting lasers such as DFBs despite their significantly different structures. This is because the extremely short cavity length of VCSELs negates the effects of their highly reflective output mirrors. As in edge-emitting lasers, VCSELs exhibit well-defined regimes of feedback effects in their spectra. Since optical isolators cannot be easily applied to VCSELs due to their array structure, these lasers may be most useful in applications which are not sensitive to the spectral qualities of the light source.<>  相似文献   
32.
p53 mutations, a tumor suppressor gene located on chromosome 17p, are the most common genetic alterations found in human cancers. Although the p53 expression or mutation has been investigated in a variety of cancers there have been very few studies in extrahepatic bile duct cancers. In this study, we investigated the immunohistochemical expression of p53 in formalin fixed paraffin embedded archival specimens of 36 extrahepatic bile duct cancers in which p53 expression was found in eighteen (50%) cases. There was no significant difference in age, gender, size of tumor, histologic grade, extent of tumor involvement, lymph node metastasis and tumor resectability according to p53 immunoreactivity. Comparison of survival duration according to p53 expression showed no significant difference. In conclusion, we reported 50 percent of p53 expression in extrahepatic bile duct cancers by immunohistochemical staining and we found no prognostic significance of p53 expression in dinicopathologic parameters.  相似文献   
33.
This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology  相似文献   
34.
A two-dimensional finite element model was constructed to analyze the simulated mechanical behavior of a cantilevered fixed partial denture. The variations of the models were made by altering the degree of bone support, the number of splinted abutments, and the length of the pontics. High stress concentrations were observed around the connectors of the fixed prosthesis and the tooth closest to the cantilever. Reduced bone support increased the deflection and stress concentrations. There was reduction in displacement and stress concentration when the teeth were splinted together. To improve the prognosis of the fixed partial denture cantilever, the number of abutments should be increased and the number of pontics decreased.  相似文献   
35.
Synthesis of ultrafine LiCoO2 powders by the sol-gel method   总被引:8,自引:0,他引:8  
Ultrafine high-temperature (HT) LiCoO2 powders were synthesized by the sol-gel method using polyacrylic acid (PAA) as a chelating agent. The decomposition process of the gel precursor was examined to determine the crystallization temperature and the dependence of the physicochemical properties of HT-LiCoO2 powders on the PAA quantity was extensively investigated. Polycrystalline HT-LiCoO2 powders, composed of very uniformly sized ultrafine particulates with an average particle size of 30–50 nm and a specific surface area of 2.3–17 m2g–1, could be obtained at the lower calcination temperature of 550 °C and the shorter calcination time of 1 h compared to the solid-state reaction.  相似文献   
36.
The magnetic properties of polyethersulfone-matrix composites with 3-19 vol.% polycrystalline nickel filaments (0.4 (im diam) were investigated. These filaments were found to exhibit hysteresis energy loss 10800 J/m3 of nickel and coercive force 16.9 kA/m, compared to corresponding values of 4930 J/m3 and 4.7 kA/m for 2 μ.m diam polycrystalline nickel fibers, 1020 J/m3 and 0.5 kA/m for 20 μm diam polycrystalline nickel fibers, and 1280 J/m3 and 2.3 kA/m for solid polycrystalline nickel.  相似文献   
37.
38.
We have studied the CO2/CH4 mixed gas permeation through hollow fiber membranes in a permeator. An approach to characterize the true separation performance of hollow fiber membranes for binary gas mixtures was provided based on experiments and simulations. Experiments were carried out to measure the retentate and permeate flow rates and compositions at each outlet. The influences of pressure drop within the hollow fibers, non-ideal gas behavior in the mixture and concentration polarization were taken into consideration in the mathematics model. The calculation results indicate that the net influence of the non-ideal gas behavior, competitive sorption and plasticization yields the calculated CO2 permeance in a mixed gas permeator close to that obtained in pure gas tests. Whereas the CH4 permeance is higher in the mixed gas tests than that in the pure gas tests, as the plasticization caused by CO2 dominates the permeation process. As a result, the CO2/CH4 mixed gas selectivity is smaller than those obtained in pure gas tests at equivalent pressures.The calculated membrane performance shows little changes with stage cut if the effect of concentration polarization is accounted for in the calculation. The integration method developed in this study could provide more accurate characterizations of mixed gas permeance of hollow membranes than other estimation methods, as our model considers the roles of non-ideal gas behavior and concentration polarization properly.  相似文献   
39.
40.
GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al2O3 were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.  相似文献   
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