A Structurable Gel‐Polymer Electrolyte for Sodium Ion Batteries

In this work, a structurable gel‐polymer electrolyte (SGPE) with a controllable pore structure that is not destroyed after immersion in an electrolyte is produced via a simple nonsolvent induced phase separation (NIPS) method. This study investigates how the regulation of the nonsolvent content affects the evolving nanomorphology of the composite separators and overcomes the drawbacks of conventional separators, such as glass fiber (GF), which has been widely used in sodium ion batteries (SIBs), through the regulation of pore size and gel‐polymer position. The interfacial resistance is reduced through selective positioning of a poly(vinylidene fluoride‐co‐hexa fluoropropylene) (PVdF‐HFP) gel‐polymer with the aid of NIPS, which in turn enhances the compatibility between the electrolyte and electrode. In addition, the highly porous morphology of the GF/SGPE obtained via NIPS allows for the absorption of more liquid electrolyte. Thus, a greatly improved cell performance of the SIBs is observed when a tailored SGPE is incorporated into the GF separator through charge/discharge testing compared with the performance observed with pristine GF and conventional GF coated with PVdF‐HFP gel‐polymer.     

A Millimeter-Wave Quasi-Optical Circuit for Compact Triple-Band Receiving System

A novel receiver optical system designed for Korean VLBI Network (KVN) has been used for conducting simultaneous millimeter-wave very long baseline interferometry (VLBI) observations at frequencies of 22, 43, 86, and 129 GHz. This multi-frequency band receiver system has been effective in compensation of atmospheric phase fluctuation by unique phase referencing technique in mm-VLBI observations. However, because the original optics system incorporated individual cryogenic receivers in separate cryostats, a rather bulky optical bench of size about 2600 mm x 2300 mm x 60 mm was required. To circumvent difficulties in installation and beam alignment, an integrated quasi-optical circuit incorporating a more compact triple-band receiver in single cryostat is proposed in this paper. The recommended frequency bands of the improved triple-band receiver are K(18–26 GHz) band, Q(35–50 GHz) band, and W(85–115 GHz) band. A frequency-independent quasi-optical circuit for triple band is adopted to obtain constant aperture efficiency as a function of the observed frequencies. The simulation results show that total aperture efficiency of each recommended frequency band is maintained almost constant within 1%. We present the design details of the compact wideband quasi-optical circuit and the triple-band receiver optimized for simultaneous multi-frequency observations.     

Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In-Sensor Neuromorphic Computation

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single-element image sensors that allow reception of information and execution of in-memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra-thin (<3 nm) doped indium oxide (In₂O₃) layers are engineered to demonstrate a monolithic two-terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof-of-concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real-time, in-sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.     

Design and analysis of multidimensional Manhattan street networks

A class of doubly connected two-dimensional Manhattan street networks (MSN) is extended to a multidimensional MSN (MMSN) by a simple edge division operation. The topology is defined by three simple link equations. An approximate expression for the diameter is obtained and a simple routing scheme for three-dimensional MMSN is introduced. The proposed MMSN is shown to possess better performance parameters than the MSN topology     

Computing approximate blocking probabilities for large lossnetworks with state-dependent routing

A reduced load approximation (also referred to as an Erlang fixed point approximation) for estimating point-to-point blocking probabilities in loss networks (e.g., circuit switched networks) with state-dependent routing is considered. In this approximation scheme, the idle capacity distribution for each link in the network is approximated, assuming that these distributions are independent from link to link. This leads to a set of nonlinear fixed-point equations which can be solved by repeated substitutions. The accuracy and the computational requirements of the approximation procedure for a particular routing scheme, namely least loaded routing, is examined. Numerical results for six-node and 36-node asymmetric networks are given. A novel reduced load approximation for multirate networks with state-dependent routing is also presented     

Resonant tunneling transistor lasers: A new approach to obtain multi-state switching and bistable operation

Bipolar resonant tunneling heterotransistor structures, which can be configured to operate as multi-state or as bistable lasers, are described. Both edge and surface-emitting structures are presented. Computations of various optoelectronics parameters including confinement factor, threshold current density, and cavity modes for a stripe-geometry structure are presented. In addition, simulations of base and collector currents are given for a resonant tunneling transistor to demonstrate the feasibility of lasing in the base region.     

On 2-D recursive LMS algorithms using ARMA prediction for ADPCMencoding of images

A two-dimensional (2D) linear predictor which has an autoregressive moving average (ARMA) representation well as a bias term is adapted for adaptive differential pulse code modulation (ADPCM) encoding of nonnegative images. The predictor coefficients are updated by using a 2D recursive LMS (TRLMS) algorithm. A constraint on optimum values for the convergence factors and an updating algorithm based on the constraint are developed. The coefficient updating algorithm can be modified with a stability control factor. This realization can operate in real time and in the spatial domain. A comparison of three different types of predictors is made for real images. ARMA predictors show improved performance relative to an AR algorithm.     

Highly stable optical add/drop multiplexer using polarization beam splitters and fiber Bragg gratings

We demonstrate a novel wavelength-division add/drop multiplexer employing fiber Bragg gratings and polarization beam splitters. The multiplexer is easy to fabricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5-Gb/s-per-channel wavelength-division multiplexing (WDM) transmission system.     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

Analysis and prevention of DRAM latch-up during power-on

The occasional power-on latch-up phenomenon of DRAM modules with a data bus shared by multiple DRAM chips on different modules was investigated and the circuit techniques for latch-up prevention were presented. Through HSPICE simulations and measurements, the latch-up triggering source was identified-to be the excessive voltage drop at the n-well pick-up of the CMOS transmission gate of read data latch circuit due to the short-circuit current which flows when the bus contention occurs during power-on. By extracting the HSPICE Gummel-Poon model parameters of the parasitic bipolar transistors of DRAM chips from the measured I-V and C-V data, HSPICE simulations were performed for the power-on latch-up phenomenon of DRAM chips. Good agreements were achieved between measured and simulated voltage waveforms. In order to prevent the power-on latch-up even when the control signals (RAS, GAS) do not track with the power supply, two circuit techniques were presented to solve the problem. One is to replace the CMOS transmission gate by a CMOS tristate inverter in the DRAM chip design and the other is to start the CAS-BEPORE-RAS (CBR) refresh cycle during power-on and thus disable all the Dout buffers of DRAM chips during the initial power-on period