A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs

We present a new ldquocurrent-sweeprdquo stress methodology for quantitatively assessing the mixed-mode reliability (simultaneous application of high current and high voltage) of advanced silicon-germanium (SiGe) HBTs. This electrical-stress methodology allows one to quickly obtain the complete ldquodamage spectrumrdquo of a given device from a particular technology platform, enabling better understanding of the complex voltage, current, and temperature interdependence associated with electrical stress and burn-in of advanced transistors. We consistently observe three distinct regions of mixed-mode damage in SiGe HBTs and find that hot-carrier-induced damage can be introduced into SiGe HBTs under surprisingly modest mixed-mode-stress conditions. For more aggressively scaled technology generations, a larger percentage of hot carriers generated in the collector-base junction are able to travel to and hence damage the emitter-base (EB) spacer, leading to enhanced forward-mode base-current leakage under stress. A new self-heating-induced mixed-mode-annealing effect is observed for the first time under specific high-voltage- and high-current-stress conditions, and a new damage mechanism is observed under very high-voltage and high-current conditions. Finally, as an example of the utility of our stress methodology, we quantify the composite mixed-mode damage spectrum of a commercial third-generation (200 GHz) SiGe HBT. We find that if devices are stressed with either voltage or current alone during burn-in, they can easily withstand extreme overstress conditions. Unfortunately, devices can easily be damaged when stressed with a combination of stress voltage and current, and this has significant implications for the lifetime prediction under realistic mixed-signal-circuit operating conditions.     

A total resistance slope-based effective channel mobilityextraction method for deep submicrometer CMOS technology

A simple yet effective total resistance slope-based method for extracting the effective channel mobility in deep submicrometer CMOS technology is developed. Using the slope of the measured total resistance versus mask length, the series resistance is removed from the measured total resistance, and mobility is extracted without involving the effective channel length. The new method facilitates mobility extraction in situations where the effective channel length is difficult to extract, such as in lightly-doped-drain (LDD) devices or at low temperatures. The new method also allows the series resistance to be any function of the gate bias, making the mobility extraction in LDD devices easier and more accurate     

RF linearity characteristics of SiGe HBTs

Two-tone intermodulation in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors (HBTs) were analyzed using a Volterra-series-based approach that completely distinguishes individual nonlinearities. Avalanche multiplication and collector-base (CB) capacitance were shown to be the dominant nonlinearities in a single-stage common emitter amplifier. At a given I_c an optimum V_ce exists for a maximum third-order intercept point (IIP3). The IIP3 is limited by the avalanche multiplication nonlinearity at low I_c, and limited by the C_CB nonlinearity at high I_c. The decrease of the avalanche multiplication rate at high I_c is beneficial to linearity in SiGe HBTs. The IIP3 is sensitive to the biasing condition because of strong dependence of the avalanche multiplication current and CB capacitance on I_c and V_ce. The load dependence of linearity was attributed to the feedback through the CB capacitance and the avalanche multiplication in the CB junction. Implications on the optimization of the transistor biasing condition and transistor structure for improved linearity are also discussed     

Microbially-mediated glass dissolution and sorption of metals by Pseudomonas aeruginosa cells and biofilm

A basaltic glass and a vitrified bottom ash were incubated at 25 degrees C in a growth medium (based on casaminoacids) inoculated with Pseudomonas aeruginosa. Bacterial growth and mineral concentrations in different compartments (bacterial cells, growth medium and biofilm) were monitored in short-term (3 days), and long-term experiments involving repeated renewals of the culture medium during 174 days. In short-term experiments, while the concentration of iron increased in the presence of bacteria, a decrease in Ni and Zn was observed in the growth medium compared to the sterile condition. During long-term experiments, such differences gradually decreased and disappeared after 78 days. On the contrary, iron concentration remained higher in the biotic condition compared to the sterile one. Bacterial growth resulted within a few days in the formation of a biofilm, which lead to the cementation of the altered glass grains. Most of the constituents of the glass (Si, Mg, Fe, Ti, Ba, Co, Zn, Cu, Ni and Cr) were found in the biofilm, while the chemical composition of the bacterial cells was very different.     

Changes in arsenic speciation through a contaminated soil profile: a XAS based study

An impacted soil located near an industrial waste site in the Massif Central near Auzon, France, where arsenical pesticides were manufactured, has been studied in order to determine the speciation (chemical forms) of arsenic as a function of soil depth. Bulk As concentrations range from 8780 mg kg(-1) in the topsoil horizon to 150 mg kg(-1) at 60 cm depth. As ores (orpiment As2S3, realgar AsS, arsenopyrite FeAsS) and former Pb- and Al-arsenate pesticides have been identified by XRD at the site and are suspected to be the sources of As contamination for this soil. As speciation was found to vary with depth, based on XRD, SEM-EDS, EPMA measurements and selective chemical extractions. Based on oxalate extraction, As is mainly associated with amorphous Fe oxides through the soil profile, except in the topsoil horizons where As is hosted by another phase. SEM-EDS and EPMA analyses led to the identification of arseniosiderite (Ca2Fe3+3(AsVO4)3O2.3H2O), a secondary mineral that forms upon oxidation of primary As-bearing minerals like arsenopyrite, in these topsoil horizons. These mineralogical and chemical results were confirmed by synchrotron-based X-ray absorption spectroscopy. XANES spectra of soil samples indicate that As occurs exclusively as As(V), and EXAFS results yield direct evidence of changes in As speciation with depth. Linear combination fits of EXAFS spectra of soil samples with those of various model compounds indicate that As occurs mainly As-bearing Fe(III)-(hydr)oxides (65%) and arseniosiderite (35%) in the topsoil horizon (0-5 cm depth). Similar analyses also revealed that there is very little arseniosiderite below 15 cm depth and that As(V) is associated primarily with amorphous Fe oxides below this depth. This vertical change of As speciation likely reflects a series of chemical reactions downward in the soil profile. Arseniosiderite, formed most likely by oxidation of arsenopyrite, is progressively dissolved and replaced by less soluble As-bearing poorly ordered Fe oxides, which are the main hosts for As in well aerated soils.     

The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT''s

This work examines the impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's using dc and ac simulation. For a fixed total bandgap offset, a conduction band pushed up by the total offset, together with a valence band pushed up by 2× the total offset gives the best ac performance, and allows the highest operational current for high frequency applications in an n–p–n HBT. A retrograded mole fraction profile, when properly optimized, can produce nearly identical ac performance for different bandgap offset distributions. These suggest that contrary to popular belief, applying careful optimization can yield excellent transistor performance for any arbitrary band alignment for both n–p–n and p–n–p graded bandgap HBT's.     

A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V.     

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors down to 30 K. Carrier freezeout is shown to be the dominant contributor to increased resistances at cryogenic temperatures for lightly-doped and moderately-doped regions, whereas the temperature dependence of the mobility is the dominant contributor to the temperature dependence of heavily-doped regions. Two incomplete ionization models, the classic model with a doping dependent activation energy and the recent model of Altermatt , are shown to underestimate and overestimate incomplete ionization rate below 100 K for intrinsic base doping, respectively. Analysis of experimental data shows that the bound state fraction factor is temperature dependent and including this temperature dependence enables compact modeling of resistances from 30 to 300 K for moderately-doped regions. For heavily-doped regions, a dual power law mobility approximation with complete ionization is shown to work well down to 30 K. An alternative approach is also presented for heavily-doped resistors which allows one to use the same model equation for all regions.     

Near-field reflection backscattering apertureless optical microscopy: application to spectroscopy experiments on opaque samples, comparison between lock-in and digital photon counting detection techniques

An apertureless scanning near-field optical microscope (ASNOM) in reflection backscattering configuration is designed to conduct spectroscopic experiments on opaque samples constituted of latex beads. The ASNOM proposed takes advantage of the depth-discrimination properties of confocal microscopes to efficiently extract the near-field optical signal. Given their importance in a spectroscopic experiment, we systematically compare the lock-in and synchronous photon counting detection methods. Some results of Rayleigh's scattering in the near field of the test samples are used to illustrate the possibilities of this technique for reflection backscattering spectroscopy.