Thermal behavior simulation of quartz resonators in an ovenenvironment

The fine performance of an ovenized oscillator is dependent on the thermal behavior of the quartz resonator, especially when there are thermal transients. In this paper, the thermal behavior of the quartz is simulated by a finite difference technique including nonlinearity as an effect of radiation. This method, based on the electrical analogs of the thermal parameters, provides an easy interaction with the electrical parameters of the oven control. A model fitting various resonator configurations, like a flat pack or a BVA resonator, is proposed. The temperature of the direct quartz environment is compared with a reference. It acts on the heating elements that are electronically driven into a closed loop. The simulation results obtained in practical situations are compared for various types of resonator assembly, in relation to heating and thermal loss parameters     

Probabilistic reliable dissemination in large-scale systems

The growth of the Internet raises new challenges for the design of distributed systems and applications. In the context of group communication protocols, gossip-based schemes have attracted interest as they are scalable, easy to deploy, and resilient to network and process failures. However, traditional gossip-based protocols have two major drawbacks: 1) they rely on each peer having knowledge of the global membership; and 2) being oblivious to the network topology, they can impose a high load on network links when applied to wide-area settings. In this paper, we provide a theoretical analysis of gossip-based protocols which relates their reliability to key system parameters (the system size, failure rates, and number of gossip targets). The results provide guidelines for the design of practical protocols. In particular, they show how reliability can be maintained while alleviating drawback by: 1) providing each peer with only a small subset of the total membership information and drawback; and 2) organizing members into a hierarchical structure that reflects their proximity according to some network-related metric. We validate the analytical results by simulations and verify that the hierarchical gossip protocol considerably reduces the load on the network compared to the original, non-hierarchical protocol.     

Comparison of two models for a high temperature reactor coupled to a gas turbine

This paper presents two independent dynamic models of a nuclear gas turbine power plant. Both the high temperature nuclear reactor (HTR) and its energy conversion system (ECS) based on a direct Brayton cycle have been modelled. One model utilises RELAP5 for the ECS, the other Aspen Custom Modeler (ACM). The reactor model used in both models is a point kinetic model derived from a detailed reactor model. The ECS model is described and compared componentwise, with an emphasis on the turbomachinery. The total plant models are compared with each other by calculating two representative transients: one load rejection transient and one transient with the system at part load.     

A neural network compensator for uncertainties of roboticsmanipulators

A neural network controller for trajectory control of robotic manipulators that is used not to internalize the inverse dynamic model of the controlled object but to compensate only the uncertainties of the robotic manipulator is presented. Its performance is compared with that of the conventional adaptive scheme. The results show the ability of the neural network controller to adapt to unstructured effects. A learning method for the neural network compensator with true teaching signals is shown. The tracking error of the robotic manipulator was greatly reduced when this controller was used     

Reply to Comment on “Ewald summation technique for one-dimensional charge distributions”

We explain why the methods in Langridge, Hart and Crampin [Comput. Phys. Commun. 134 (2001) 78] suffice for the evaluation of the lattice sums entering the Madelung matrix describing multipole interactions in systems with one-dimensional translational periodicity.     

Shape memory properties of Ni-Ti based melt-spun ribbons

Shape-memory properties of equiatomic NiTi, Ni₄₅Ti₅₀Cu₅, and Ni₂₅Ti₅₀Cu₂₅ ribbons made by melt spinning have been studied by temperature inducing the martensitic transformation under constant tensile loads. Recoverable strains above 4 pct can be obtained under ∼100 MPa loads for the NiTi and Ni₄₅Ti₅₀Cu₅ ribbons, transforming to B19’ martensite. The B19 martensite is formed in the Ni₂₅Ti₅₀Cu₂₅ ribbon after crystallization, and according to the lowering in transformation strain as Cu content increases, the recoverable strain is close to 2.5 pct for ∼150 MPa load. The transformation temperatures exhibit a linear dependence on the applied stress, which can be quantitatively described by means of a Clausius-Clapeyron type equation. The NiTi and Ni₄₅Ti₅₀Cu₅ ribbons exhibited some degree of two-way shape-memory effect (TWSME) after thermomechanical cycling. Texture analyses performed on the different ribbons allow us to better understand the transformation strains obtained in each ribbon. The amounts of shape-memory effect (SME) and nonrecoverable strain shown by the studied ribbons are of the same order as those already observed in bulk materials, which makes melt spinning an ideal substitute to complicated manufacturing processes if really thin samples are needed. However, applicable stresses in melt-spun ribbons are limited by a relatively “premature” brittle fracture caused by irregularities in ribbon thickness.     

Hydrogen absorption by Pd-coated ZrNi prepared by using Barrel-Sputtering System

To improve the durability of hydrogen storage materials against surface poisoning by impurity gases, effectiveness of Pd-coating layer prepared by using a Barrel-Sputtering System was examined for ZrNi powder. The effectiveness of Pd-coating was evaluated by activation temperature, at which Pd/ZrNi poisoned by air could be activated to absorb hydrogen. Characterization of Pd-coated ZrNi (denoted as Pd/ZrNi) by scanning electron microscopy, electron probe microanalysis and X-ray diffraction showed that a uniform Pd-coating layer was formed with the barrel-sputtering system. It was found that the poisoned Pd/ZrNi sample could be activated even at 423 K to absorb hydrogen at room temperature. This exhibits remarkable contrast to bare ZrNi, which could be only activated appreciably above 1073 K. It is concluded that the Pd-coating by barrel sputtering is quite effective to avoid the effect of surface poisoning of powdery hydrogen storage materials. However, the activation at excessively high temperature resulted in the loss of high activity to absorb hydrogen. It was concluded that this phenomenon was associated with reactions between Pd and ZrNi to form PdZr and other byproducts.     

Circular core polarization-maintaining optical fibers withelliptical stress-induced cladding

The reproducible technology for producing high-birefringence fibers with stress-induced elliptical cladding and circular core is described. The authors have obtained fibers that have a birefringence of about (1-3) 10^-4, a mode coupling parameter of about (2-7) 10 ^-5 m^-1, and loss of less than 0.5 dB/km at 1.6 μm. The authors have found effects restricting the capability of test fibers to maintain the state of linear polarization     

Effect of bipolar turn-on on the static current-voltagecharacteristics of scaled vertical power DMOSFET's

The parasitic bipolar transistor inherent in the power vertical Double Diffused MOSFET (DMOSFET) structure can have a significant impact on its performance and reliability. Selectively formed TiSi₂ films on source contacts were used to reduce the contact resistance to n ⁺ source diffusion. These devices exhibit “kinks” in the output I-V characteristics. High contact resistance of TiSi₂ to moderately doped p-body diffusion causes high output conductance. Detailed two-dimensional numerical simulations are used to investigate the effect of the parasitic bipolar transistor on the static characteristics of scaled silicided DMOSFET's. The high contact resistance of TiSi₂-p-body interface leads to a floating potential and causes significant reduction in the MOS gate threshold voltage and results in a premature bipolar turn-on. It is shown that the parasitic bipolar turn-on places an important constraint on the scalability of the device into the submicron regime. A novel self-aligned DMOSFET structure with a shallow diffused p⁺ region is shown to eliminate this effect. Numerical simulations are shown to be in excellent agreement with the measured data at various temperatures