Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.     

1.04 GBd low EMI digital video interface system using small swingserial link technique

In a high-resolution flat panel system, a conventional interface that directly connects a liquid crystal display (LCD) controller to a flat panel cannot overcome the problems of excess EMI (electromagnetic interference) and power caused by full-swing transmission signals in parallel lines. This paper presents a high-speed digital video interface system implemented with a low-cost standard CMOS (complimentary metal-oxide-semiconductor) technology that can mitigate EMI and power problems in high-resolution flat panel display systems. The combined architecture of the high-speed, small number of parallel lines and low-voltage swing serial interface can support resolutions from VGA (640×480 pixels) up to XGA (1024×768 pixels) with significant power improvement and drastic EMI reduction. To support high-speed, low-voltage swing signaling and overcome channel-to-channel skew problems, a robust data recovery system is required. The proposed digital phase-locked loop enables robust skew-insensitive data recovery of up to 1.04 GBd     

A 200-MHz complex number multiplier using redundant binaryarithmetic

Modern digital communication systems rely heavily on baseband signal processing for in-phase and quadrature (I-Q) channels, and complex number processing in low-voltage CMOS has become a necessity for channel equalization, timing recovery, modulation, and demodulation. In this work, redundant binary (RB) arithmetic is applied to complex number multiplication for the first time so that an N-bit parallel complex number multiplier can be reduced to two RE multiplications (i.e., an addition of N RB partial products) corresponding to real and imaginary parts, respectively. This efficient RE encoding scheme proposed can generate RB partial products with no additional hardware and delay overheads. A prototype 8-bit complex number multiplier containing 11.5 K transistors is integrated on 1.05×1.33 mm² using 0.8 μm CMOS. The chip consumes 90 mW with 2.5 V supply when clocked at 200 MHz     

Accuracy of using computed tomography to identify pedicle screw placement in cadaveric human lumbar spine

STUDY DESIGN: Utility of using computed tomography to predict pedicle screw misplacement. OBJECTIVE: This study defines the sensitivity and specificity of predicting pedicle screw placement by experienced clinicians using a CT scan image. SUMMARY OF BACKGROUND DATA: In clinical and research settings, the method most commonly used to evaluate pedicle screws placement has been computed tomography. However, no current literature describes the accuracy of this method of evaluating screw placement. METHOD: Cobalt-chrome and titanium alloy pedicle screws of identical size were placed in six cadaveric human lumbar spine. Wide laminectomy was performed to allow complete visualization of the pedicles. Three consecutive lumbar levels were instrumented in each spine, giving 36 pedicle screw placements to identify. The instrumented spines were imaged, and four orthopaedic spine surgeons and a musculoskeletal radiologist were asked to read the images to identify the accuracy of screw placement within the pedicles. RESULTS: The sensitivity rate of identifying a misplaced screw was 67 +/- 6% for cobalt-chrome screws compared with 86 +/- 5% for titanium screws (P < 0.005). The specificity rates of radiographic diagnosis of misplaced pedicle screws were 66 +/- 10% for cobalt-chrome screws and 88 +/- 8% for titanium screws (P < 0.005). Similarly, a statistically significant difference was found in the sensitivity rates of identifying screws placed correctly in the pedicle: 70 +/- 10% for cobalt-chrome screws versus 89 +/- 8% for titanium screws (P < 0.005). Overall accuracy rates were 68 +/- 7% for cobalt chrome screws versus 87 +/- 3% for titanium screws (P < 0.002). CONCLUSION: Reliance on the computed tomography scan data alone in determining accuracy of pedicle screws can lead to inaccuracies in both clinical and research conditions.     

Unified equation of state based on the lattice fluid theory for phase equilibria of complex mixtures part I. Molecular thermodynamic framework

Consistent calculation of fugacities of fluid mixtures remains as one of the most important subjects in contemporary molecular thermodynamics. In practice, equations of state (EOSs) and g^E-models have been used. However, most EOSs are erroneous for condensed phases at high densities and g^E-models are inapplicable for pressuresensitive systems. Recently to remedy the shortcomings in both approaches, there has been a surge of new g^E-EOS mixing rules. By equating any set of EOS and g^E-models, the limitations in both approaches could be resolved significantly. However, the self-consistency in the underlying concept of those mixing rules remains controversial. During the last several years, the present authors proposed a new lattice-fluid EOS and its simplification relevant to phase equilibrium calculations. Without employing any g^E-EOS mixing rule and with only two parameters for a pure component and one adjustable interaction energy parameter for a binary mixture, results obtained to date demonstrated that the EOSs are quantitatively applicable to a great variety of phase equilibrium properties of mixtures, especially, for complex and/or macromolecular systems. In the present article we summarize the EOSs and extended the applications to liquid-liquid Equilibria. In part I, we discussed briefly the molecular thermodynamic aspects of general derivation of the EOS and a brief discussion of applying the EOSs to pure fluids while the illustrative application to various real mixture systems is discussed in part II.     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained