Effective Polysulfide Rejection by Dipole‐Aligned BaTiO3 Coated Separator in Lithium–Sulfur Batteries

Although the exceptional theoretical specific capacity (1672 mAh g^?1) of elemental sulfur makes lithium–sulfur (Li–S) batteries attractive for upcoming rechargeable battery applications (e.g., electrical vehicles, drones, unmanned aerial vehicles, etc.), insufficient cycle lives of Li–S cells leave a substantial gap before their wide penetration into commercial markets. Among the key features that affect the cyclability, the shuttling process involving polysulfides (PS) dissolution is most fatal. In an effort to suppress this chronic PS shuttling, herein, a separator coated with poled BaTiO₃ or BTO particles is introduced. Permanent dipoles that are formed in the BTO particles upon the application of an electric field can effectively reject PS from passing through the separator via electrostatic repulsion, resulting in significantly improved cyclability, even when a simple mixture of elemental sulfur and conductive carbon is used as a sulfur cathode. The coating of BTO particles also considerably suppresses thermal shrinkage of the poly(ethylene) separator at high temperatures and thus enhances the safety of the cell adopting the given separator. The incorporation of poled particles can be universally applied to a wide range of rechargeable batteries (i.e., metal‐air batteries) that suffer from cross‐contamination of charged species between both electrodes.     

A Multi‐Strategic Concept‐Spotting Approach for Robust Understanding of Spoken Korean

We propose a multi‐strategic concept‐spotting approach for robust spoken language understanding of conversational Korean in a hostile recognition environment such as in‐car navigation and telebanking services. Our concept‐spotting method adopts a partial semantic understanding strategy within a given specific domain since the method tries to directly extract pre‐defined meaning representation slot values from spoken language inputs. In spite of partial understanding, we can efficiently acquire the necessary information to compose interesting applications because the meaning representation slots are properly designed for specific domain‐oriented understanding tasks. We also propose a multi‐strategic method based on this concept‐spotting approach such as a voting method. We present experiments conducted to verify the feasibility of these methods using a variety of spoken Korean data.     

Inverted Staggered Poly-Si Thin-Film Transistor With Planarized SOG Gate Insulator

In this letter, we have studied the inverted staggered thin-film transistor (TFT) using a spin-on-glass (SOG) gate insulator and a low-temperature polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon. The p-channel poly-Si TFT exhibited a field-effect mobility of 48.2 cm²/V ldr s, a threshold voltage of -4.2 V, a gate-voltage swing of 1.2 V/dec, and a minimum off-current of < 4 times 10^-13A/ mum at V_ds = -0.1 V. Therefore, the gate planarization technology by SOG can be applicable to low-cost large-area poly-Si active-matrix displays.     

A new three-level soft-switched converter

A three-level, constant-frequency, isolated converter which employs a coupled inductor to achieve zero-voltage switching of the primary switches in the entire line and load range is described. Because the coupled inductor does not appear as a series inductance in the load current path, it does not cause a loss of duty cycle or severe voltage ringing across the output rectifiers. The operation and performance of the proposed converter was verified on a 1-kW prototype.     

A Multi‐Functional Highly Efficient Upconversion Luminescent Film with an Array of Dielectric Microbeads Decorated with Metal Nanoparticles

Upconversion nanoparticles (UCNPs) have been integrated with photonic platforms to overcome the intrinsically low quantum efficiency limit of upconversion luminescence (UCL). However, platforms based on thin films lack transferability and flexibility, which hinders their broader and more practical application. A plasmonic structure is developed that works as a multi‐functional platform for flexible, transparent, and washable near‐infrared (NIR)‐to‐visible UCL films with ultra‐strong UCL intensity. The platform consists of dielectric microbeads decorated with plasmonic metal nanoparticles on an insulator/metal substrate. Distinct improvements in NIR confinement, visible light extraction, and boosted plasmonic effects for upconversion are observed. With weak NIR excitation, the UCL intensity is higher by three orders of magnitude relative to the reference platform. When the microbeads are organized in a square lattice array, the functionality of the platform can be expanded to wearable and washable UCL films. The platform can be transferred to transparent, flexible, and foldable films and still emit strong UCL with a wide viewing angle.     

A Rigorous 2D Approximation Technique for 3D Waveguide Structures for BPM Calculations

We propose a rigorous 2D approximation technique for the 3D waveguide structures; it can minimize the well‐known approximation errors of the commonly used effective index method. The main concept of the proposed technique is to compensate for the effective cladding index in the equivalent slab model of the original channel waveguide from the modal effective index calculated by the nonuniform 2D finite difference method. With simulations, we used the proposed technique to calculate the coupling characteristics of a directional coupler by the 2D beam propagation method, and the results were almost exactly the same as the results calculated by the 3D beam propagation method.     

N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al₂O₃ layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm²/Vs and an on/off current ratio of about 10². In addition, the electrical characteristics of the TFT on bent substrates are briefly described.     

Latch Applicator for Efficient Delivery of Dissolving Microneedles Based on Rapid Release of Elastic Strain Energy by Thumb Force (Adv. Funct. Mater. 11/2023)

Dissolving microneedle (DMN) is an attractive alternative to parenteral and enteral drug administration owing to its painless self-administration and safety due to non-generation of medical waste. For reproducible and efficient DMN administration, various DMN application methods, such as weights, springs, and electromagnetic devices, have been studied. However, these applicators have complex structures that are complicated to use and high production costs. In this study, a latch applicator that consists of only simple plastic parts and operates via thumb force without any external complex device is developed. Protrusion-shaped latches and impact distances are designed to accumulate thumb force energy through elastic deformation and to control impact velocity. The optimized latch applicator with a pressing force of 25 N and an impact velocity of 5.9 m s⁻¹ fully inserts the drug-loaded tip of the two-layered DMN into the skin. In an ovalbumin immunization test, DMN with the latch applicator shows a significantly higher IgG antibody production rate than that of intramuscular injection. The latch applicator, which provides effective DMN insertion and a competitive price compared with conventional syringes, has great potential to improve delivery of drugs, including vaccines.     

A source degenerated LC quadrature VCO (SD-QVCO) using 0.18-μm SiGe BiCMOS

This letter presents a fully integrated BiCMOS quadrature voltage-controlled oscillator (QVCO). The QVCO consists of two nMOSFET cross-coupled oscillator stacked in series with source degenerated HBT transistors. SiGe HBT introduces low flicker noise compared to CMOS devices. To generate quadrature phase signals with strong coupling strength, the proposed design uses two MOS-coupled LC-tank cores instead of passive device-coupled cores. This source degeneration topology can improve the phase noise performance of the QVCO as compared to the sub-VCO. The proposed QVCO has been implemented with the TSMC 0.18 μm SiGe 3P6M BiCMOS process, can generate quadrature signals in the frequency range of 4.52–5.05 GHz with core power consumption of 5.76 mW at the dc bias of 1.8 V. At 4.53 GHz, phase noise at 1 MHz offset is ?124.52 dBc/Hz. The die area of the fabricated prototype is 0.453 × 0.898 mm².     

High-speed driving method using bipolar scan waveform in AC plasma display panel

This paper proposes a new high-speed driving method using the bipolar scan waveform with a scan width of 1 /spl mu/s in an ac-plasma display panel. The bipolar scan waveform in an address period consists of a two-step pulse with two different polarities, i.e., a forward scan pulse with a negative polarity and reverse scan pulse with a positive polarity, which can produce two address discharges, including a primary address discharge for generating wall charges and secondary address discharge for accumulating wall charges. To produce the fast address discharge stably using the bipolar scan pulse during an address period, a new reset waveform is designed based on a V/sub t/ close curve analysis, and the address discharge characteristics examined under various reset and address waveforms. As a result of adopting the proposed driving method, a high-speed address with a scan width of 1 /spl mu/s is successfully obtained when using a checkered pattern on a 4-in test panel.