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211.
This paper presents a survey of non-fungible tokens (NFTs), including its history, technologies, standards, and challenges in their development. An NFT is a unique digital entity that is created and maintained using blockchain technology. Each NFT is identified using a unique smart contract and a token ID, so the whole history of the NFT can be globally identified by its address and token ID. The blockchain information indelibly identifies the current owner of any asset, previous owners, and original creator. NFTs are used to manage ownership of digital and physical assets and cryptocurrencies. The prices of popular NFTs have become very high, and the market for them has overheated in recent years. NFT technology and its ecosystem have evolved since Quantum, the first NFT, was stored in the Namecoin blockchain. Ethereum has become the main platform for NFT projects because it provides support for smart contracts. Currently, almost all NFT projects are launched on the Ethereum blockchain. NFT has two major standards called ERC-721 and ERC-1155, which have had important functions in the development of NFT. Starting with these two standards, other standards for NFT continue to emerge; they expand the functionality of NFT such as by adding utility. However, NFT is a very early technology, and it has not been long after the NFT concept was created and used. So there are several challenges for further improving NFT technology, in terms of usability, interoperability, and evolution. This paper presents a survey of NFT, including its history, technologies, standards, and challenges of NFT.  相似文献   
212.
Design of wide-band compact corrugated horns   总被引:1,自引:0,他引:1  
It is shown that a specially profiled corrugated horn with a ring-loaded input converter section is capable of operating over bandwidth ratios of up to 2.4: 1. The cross polarization across the band is relatively low, and the change in beamwidth and phase-center position with frequency is acceptable for many applications. This "compact" horn is significantly smaller than the conventional wide-band corrugated horn, and is particularly recommended as a feed in a dual-reflector antenna where space is limited.  相似文献   
213.
Journal of Signal Processing Systems - This paper presents an algorithm-adaptable, scalable, and platform-portable generator for massive multiple-input multiple-output (MIMO) baseband processing...  相似文献   
214.
A comprehensive study of the effect of intraphase microstructure on organic photovoltaic (OPV) device performance is undertaken. Utilizing a bilayer device architecture, a small molecule donor (TIPS‐DBC) is deposited by both spin‐coating and by thermal evaporation in vacuum. The devices are then completed by thermal evaporation of C60, an exciton blocking layer and the cathode. This bilayer approach enables a direct comparison of device performance for donor layers in which the same material exhibits subtle differences in microstructure. The electrical performance is shown to differ considerably for the two devices. The bulk and interfacial properties of the donor layers are compared by examination with photoelectron spectroscopy in air (PESA), optical absorption spectroscopy, charge extraction of photo‐generated charge carriers by linearly increasing voltage (photo‐CELIV), time‐resolved photoluminescence measurements, X‐ray reflectometry (XR), and analysis of dark current behavior. The observed differences in device performance are shown to be influenced by changes to energy levels and charge transport properties resulting from differences in the microstructure of the donor layers. Importantly, this work demonstrates that in addition to the donor/acceptor microstructure, the intraphase microstructure can influence critical parameters and can therefore have a significant impact on OPV performance.  相似文献   
215.
The rapidly increasing solar conversion efficiency (PCE) of hybrid organic–inorganic perovskite (HOIP) thin-film semiconductors has triggered interest in their use for direct solar-driven water splitting to produce hydrogen. However, application of these low-cost, electronic-structure-tunable HOIP tandem photoabsorbers has been hindered by the instability of the photovoltaic-catalyst-electrolyte (PV+E) interfaces. Here, photolytic water splitting is demonstrated using an integrated configuration consisting of an HOIP/n+silicon single junction photoabsorber and a platinum (Pt) thin film catalyst. An extended electrochemical (EC) lifetime in alkaline media is achieved using titanium nitride on both sides of the Si support to eliminate formation of insulating silicon oxide, and as an effective diffusion barrier to allow high-temperature annealing of the catalyst/TiO2-protected-n+silicon interface necessary to retard electrolytic corrosion. Halide composition is examined in the (FA1-xCsx)PbI3 system with a bandgap suitable for tandem operation. A fill factor of 72.5% is achieved using a Spiro-OMeTAD-hole-transport-layer (HTL)-based HOIP/n+Si solar cell, and a high photocurrent density of −15.9 mA cm−2 (at 0 V vs reversible hydrogen electrode) is attained for the HOIP/n+Si/Pt photocathode in 1 m NaOH under simulated 1-sun illumination. While this thin-film design creates stable interfaces, the intrinsic photo- and electro-degradation of the HOIP photoabsorber remains the main obstacle for future HOIP/Si tandem PEC devices.  相似文献   
216.
High-energy transmission x-ray diffraction techniques have been applied to investigate the crystal quality of CdZnTe (CZT). CdZnTe has shown excellent performance in hard x-ray and gamma detection; unfortunately, bulk nonuniformities still limit spectroscopic properties of CZT detectors. Collimated high-energy x-rays, produced by a superconducting wiggler at the National Synchrotron Light Source’s X17B1 beamline, allow for a nondestructive characterization of thick CZT samples (2–3 mm). In order to have complete information about the defect distribution and strains in the crystals, two series of experiments have been performed. First, a monochromatic 67 keV x-ray beam with the size of 300×300 μm2 was used to measure the rocking curves of CZT crystals supplied by different material growers. A raster scan of a few square centimeter area allowed us to measure the full-width at half-maximum (FWHM) and shift in the peak position across the crystal. The rocking curve peak position and its FWHM can be correlated with local stoichiometry variations and other local defects. Typically, the FWHM values ranging from 8.3 arcsec to 14.7 arcsec were measured with the best crystal used in these measurements. Second, transmission white beam x-ray topography (WBXT) was performed by using a 22 mm×200 μm beam in the energy range of 50 keV to 200 keV. These types of measurements allowed for large area, high-resolution (50 μm) scans of the samples. Usually, this technique is used to visualize growth and process-induced defects, such as dislocations, twins, domains, inclusions, etc. the difference in contrast shows different parts of the crystal that could not be shown otherwise. In topography, good contrast is indicative of a high quality of the sample, while blurred gray shows the presence of defects. Correlation with other techniques (e.g., infrared (IR) mapping and gamma mapping) was also attempted. Our characterization techniques, which use highly penetrating x-rays, are valid for in-situ measurements, even after electrical contacts have been formed on the crystal in a working device. Thus, these studies may lead to understanding the effects of the defects on the device performance and ultimately to improving the quality of CZT material required for device fabrication. It is important to study crystals from different ingot positions (bottom, center, and top); consequently, more systematic studies involving scans from center to border are planned.  相似文献   
217.
Comprehensive and systematic electrical and optical activation studies of Si-implanted GaN were made as a function of ion dose and anneal temperature. Silicon ions were implanted at 200 keV with doses ranging from 1×1013 cm?2 to 5×1015 cm?2 at room temperature. The samples were proximity-cap annealed from 1050°C to 1350°C with a 500-Å-thick AlN cap in a nitrogen environment. The optimum anneal temperature for high dose implanted samples is approximately 1350°C, exhibiting nearly 100% electrical activation efficiency. For low dose (≤5×1014 cm?2) samples, the electrical activation efficiencies continue to increase with an anneal temperature through 1350°C. Consistent with the electrical results, the photoluminescence (PL) measurements show excellent implantation damage recovery after annealing the samples at 1350°C for 20 sec, exhibiting a sharp neutral-donor-bound exciton peak along with a sharp donor-acceptor pair peak. The mobilities increase with anneal temperature, and the highest mobility obtained is 250 cm2/Vs. The results also indicate that the AlN cap protected the implanted GaN layer during high-temperature annealing without creating significant anneal-induced damage.  相似文献   
218.
Multicolor infrared (IR) focal planes are required for high-performance sensor applications. These sensors will require multicolor focal plane arrays (FPAs) that will cover various wavelengths of interest in mid wavelength infrared/long wavelength infrared (MWIR/LWIR) and long wavelength infrared/very long wavelength infrared (LWIR/VLWIR) bands. There has been significant progress in HgCdTe detector technology for multicolor MWIR/LWIR and LWIR/VLWIR FPAs.1–3 Two-color IR FPAs eliminate the complexity of multiple single-color IR FPAs and provide a significant reduction of weight and power in simpler, reliable, and affordable systems. The complexity of a multicolor IR detector MWIR/LWIR makes the device optimization by trial and error not only impractical but also merely impossible. Too many different geometrical and physical variables need to be considered at the same time. Additionally, material characteristics are only relatively controllable and depend on the process repeatability. In this context, the ability of performing “simulation experiments” where only one or a few parameters are carefully controlled is paramount for a quantum improvement of a new generation of multicolor detectors for various applications.  相似文献   
219.
220.
A support vector classifier (SVC) approach was employed in predicting the risk of progression of adolescent idiopathic scoliosis (AIS), a condition that causes visible trunk asymmetries. As the aetiology of AIS is unknown, its risk of progression can only be predicted from measured indicators. Previous studies suggest that individual indicators of AIS do not reliably predict its risk of progression. Complex indicators with better predictive values have been developed but are unsuitable for clinical use as obtaining their values is often onerous, involving much skill and repeated measurements taken over time. Based on the hypothesis that combining common indicators of AIS using an SVC approach would produce better prediction results more quickly, we conducted a study using three datasets comprising a total of 44 moderate AIS patients (30 observed, 14 treated with brace). Of the 44 patients, 13 progressed less than 5 degrees and 31 progressed more than 5 degrees. One dataset comprised all the patients. A second dataset comprised all the observed patients and a third comprised all the brace-treated patients. Twenty-one radiographic and clinical indicators were obtained for each patient. The result of testing on the three datasets showed that the system achieved 100% accuracy in training and 65%-80% accuracy in testing. It outperformed a "statistically equivalent" logistic regression model and a stepwise linear regression model on the said datasets. It took less than 20 min per patient to measure the indicators, input their values into the system, and produce the needed results, making the system viable for use in a clinical environment.  相似文献   
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