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51.
A 90-nm logic technology featuring strained-silicon 总被引:10,自引:0,他引:10
Thompson S.E. Armstrong M. Auth C. Alavi M. Buehler M. Chau R. Cea S. Ghani T. Glass G. Hoffman T. Jan C.-H. Kenyon C. Klaus J. Kuhn K. Zhiyong Ma Mcintyre B. Mistry K. Murthy A. Obradovic B. Nagisetty R. Phi Nguyen Sivakumar S. Shaheed R. Shifren L. Tufts B. Tyagi S. Bohr M. El-Mansy Y. 《Electron Devices, IEEE Transactions on》2004,51(11):1790-1797
A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach. 相似文献
52.
Detection of skin cancer by classification of Raman spectra 总被引:1,自引:0,他引:1
Sigurdsson S Philipsen PA Hansen LK Larsen J Gniadecka M Wulf HC 《IEEE transactions on bio-medical engineering》2004,51(10):1784-1793
Skin lesion classification based on in vitro Raman spectroscopy is approached using a nonlinear neural network classifier. The classification framework is probabilistic and highly automated. The framework includes a feature extraction for Raman spectra and a fully adaptive and robust feedforward neural network classifier. Moreover, classification rules learned by the neural network may be extracted and evaluated for reproducibility, making it possible to explain the class assignment. The classification performance for the present data set, involving 222 cases and five lesion types, was 80.5%+/-5.3% correct classification of malignant melanoma, which is similar to that of trained dermatologists based on visual inspection. The skin cancer basal cell carcinoma has a classification rate of 95.8%+/-2.7%, which is excellent. The overall classification rate of skin lesions is 94.8%+/-3.0%. Spectral regions, which are important for network classification, are demonstrated to reproduce. Small distinctive bands in the spectrum, corresponding to specific lipids and proteins, are shown to hold the discriminating information which the network uses to diagnose skin lesions. 相似文献
53.
Goossen K.W. Cunningham J.E. Jan W.Y. Leibenguth R. 《Quantum Electronics, IEEE Journal of》1998,34(3):431-438
We approach the question of optimization of surface-normal p-i(multiquantum-well, MQW)-n modulators from the viewpoint of investigating their tolerance to variations in wavelength and temperature and errors in manufacture. The reflection characteristics of two high-quality samples are carefully processed to eliminate Fabry-Perot fringes, and then their spectra at any bias are characterized with six phenomenological parameters which depend on λ0, the zero-field exciton position. The two GaAs-AlAs samples have λ0's of 833.8 and 842.3 nm, and so cover a range useful for modulators designed to operate near 850 nm in the normally reflecting condition, i.e., reflection decreases with field. A linear interpolation of the parameters of these two samples is used to predict the behavior of MQW diodes with λ0's around this range, and so a fully comprehensive examination of normally reflecting MQW modulators is performed. The performance aspect that is examined is contrast ratio as a function of nonuniformities in the devices or operating conditions given a voltage swing of 3 V. There are two operational modes discussed. If the voltage offset of the bias is allowed to vary via a feedback circuit, a contrast of 2:1 may be maintained over an operating wavelength change (Δλ) of 17 nm with local variations of wavelength of ±1 nm, which corresponds to a temperature variation of 60°C while allowing for variations of laser driver wavelength of ±1 nm. If feedback Is not permitted, we determine that, given tolerances to manufacturing errors, a contrast of 1.5:1 may be maintained over a wavelength range of ~5 nm by either using stacked diode designs or extremely shallow quantum wells 相似文献
54.
Ron Koster Albert C. Van der Woerd Wouter A. Serdijn Jan Davidse Arthur H. M. Van Roermund 《Analog Integrated Circuits and Signal Processing》1996,9(3):207-214
In this paper design rules for a circuit topology in which there is an inseparable combination of an amplifier and a filter characteristic, are presented. By intentionally using the capacitance of an already present input sensor for the filtering, the total required integrated capacitance is much less than that in circuits, which have a separately designed amplifier and filter function. Consequently, it is possible to have the advantage of a better integratability. Moreover, less complexity in the design is achieved. The presented circuit shows a current-to-voltage conversion and an inherently controllable second-order low-pass filter characteristic. A discrete realization has been designed to test the circuit. This circuit operates down to a 1 V supply voltage and the transfer shows a 1.8 M currentto-voltage conversion with a bandwidth of 6 kHz. Measurement results of this circuit show that a 63 dB dynamic range can be achieved with a total required integrated capacitance of only 31 pF. 相似文献
55.
Ren M.J. Benders Rixt Kok Henri C. Moll Gerwin Wiersma Klaas Jan Noorman 《Energy Policy》2006,34(18):3612-3622
Large-scale energy reduction campaigns focusing on households generally have two shortcomings. First, an energy reduction campaign is either personalized but time intensive or time extensive but generalized. Second, because only the direct energy requirements are addressed, only 50% of the total household energy requirement is subject to reduction. The other 50%, the indirect energy requirement, is much more difficult to calculate and address and therefore not subject to reduction.
In this paper, we describe a web-based tool that has the potential to overcome both of these shortcomings. The tool addresses direct as well as indirect energy requirements. By means of a simple expert system participants obtain personalized reduction options and feedback on the energy reduced. The tool was tested in Groningen (the Netherlands) with a sample of 300 households, resulting in a direct energy reduction of about 8.5% compared to a control group. The reduction in indirect energy was not statistically significant. 相似文献
56.
High‐Efficiency InP‐Based Photocathode for Hydrogen Production by Interface Energetics Design and Photon Management 下载免费PDF全文
Lu Gao Yingchao Cui Rene H. J. Vervuurt Dick van Dam Rene P. J. van Veldhoven Jan P. Hofmann Ageeth A. Bol Jos E. M. Haverkort Peter H. L. Notten Erik P. A. M. Bakkers Emiel J. M. Hensen 《Advanced functional materials》2016,26(5):679-686
The solar energy conversion efficiency of photoelectrochemical (PEC) devices is usually limited by poor interface energetics, limiting the onset potential, and light reflection losses. Here, a three‐pronged approach to obtain excellent performance of an InP‐based photoelectrode for water reduction is presented. First, a buried p–n+ junction is fabricated, which shifts the valence band edge favorably with respect to the hydrogen redox potential. Photoelectron spectroscopy substantiates that the shift of the surface photovoltage is mainly determined by the buried junction. Second, a periodic array of InP nanopillars is created at the surface of the photoelectrode to substantially reduce the optical reflection losses. This device displays an unprecedented photocathodic power‐saved efficiency of 15.8% for single junction water reduction. Third, a thin TiO2 protection layer significantly increases the stability of the InP‐based photoelectrode. Careful design of the interface energetics based on surface photovoltage spectroscopy allows obtaining a PEC cell with stable record performance in water reduction. 相似文献
57.
Wang YY Lia WC Hsiu H Jan MY Wang WK 《IEEE transactions on bio-medical engineering》2000,47(3):313-318
The pressure wave moving along an elastic artery filled with blood was examined as a moving Windkessel having a natural oscillation angular frequency nu 0 and a damping coefficient b. The radial directional motion for an element of the wall segment and the adherent fluid was considered. This equation was solved with conditions at both ends of an artery of length L. An external impulse force was applied at one end and a static pressure Po at the other. Analytic solution allowed only certain oscillation modes of resonance frequencies fn, where fn2 = a + cnL-2 with [formula: see text] and V infinity is the high frequency phase velocity. The relationship between f0 and L was examined experimentally for tubes constructed of latex, rubber, or dissected aorta. The effect of raising the static pressure P0 or increasing the tension in the tube was consistent with the prediction. The hypertension that accompanies an augmentation in arterial wall and the association between the heart rate and the mean blood pressure were discussed. 相似文献
58.
Golam Haider Krishna Sampathkumar Tim Verhagen Lukáš Nádvorník Farjana J. Sonia Václav Valeš Jan Sýkora Peter Kapusta Petr Němec Martin Hof Otakar Frank Yang-Fang Chen Jana Vejpravová Martin Kalbáč 《Advanced functional materials》2021,31(29):2102196
Recent advancements in isolation and stacking of layered van der Waals materials have created an unprecedented paradigm for demonstrating varieties of 2D quantum materials. Rationally designed van der Waals heterostructures composed of monolayer transition-metal dichalcogenides (TMDs) and few-layer hBN show several unique optoelectronic features driven by correlations. However, entangled superradiant excitonic species in such systems have not been observed before. In this report, it is demonstrated that strong suppression of phonon population at low temperature results in a formation of a coherent excitonic-dipoles ensemble in the heterostructure, and the collective oscillation of those dipoles stimulates a robust phase synchronized ultra-narrow band superradiant emission even at extremely low pumping intensity. Such emitters are in high demand for a multitude of applications, including fundamental research on many-body correlations and other state-of-the-art technologies. This timely demonstration paves the way for further exploration of ultralow-threshold quantum-emitting devices with unmatched design freedom and spectral tunability. 相似文献
59.
Filip Sroubek Gabriel Cristóbal Jan Flusser 《IEEE transactions on image processing》2007,16(9):2322-2332
This paper presents a new approach to the blind deconvolution and superresolution problem of multiple degraded low-resolution frames of the original scene. We do not assume any prior information about the shape of degradation blurs. The proposed approach consists of building a regularized energy function and minimizing it with respect to the original image and blurs, where regularization is carried out in both the image and blur domains. The image regularization based on variational principles maintains stable performance under severe noise corruption. The blur regularization guarantees consistency of the solution by exploiting differences among the acquired low-resolution images. Several experiments on synthetic and real data illustrate the robustness and utilization of the proposed technique in real applications. 相似文献
60.
Huifang Qin Yu Cao Dejan Markovic Andrei Vladimirescu Jan Rabaey 《Microelectronics Journal》2005,36(9):789-800
Suppressing the leakage current in memories is critical in low-power design. By reducing the standby supply voltage (VDD) to its limit, which is the data retention voltage (DRV), leakage power can be substantially reduced. This paper models the DRV of a standard low leakage SRAM module as a function of process and design parameters, and analyzes the SRAM cell stability when VDD approaches DRV. The DRV model is verified using simulations as well as measurements from a 4 KB SRAM chip in a 0.13 μm technology. Due to a large on-chip variation, DRV of the 4 KB SRAM module ranges between 60 and 390 mV. Measurements taken at 100 mV above the worst-case DRV show that reducing the SRAM standby VDD to a safe level of 490 mV saves 85% leakage power. Further savings can be achieved by applying DRV-aware SRAM optimization techniques, which are discussed at the end of this paper. 相似文献