Direct vapor phase growth process and robust photoluminescence properties of large area MoS2 layers

There has been growing research interest in the use of molybdenum disulfide in the fields of optoelectronics and energy harvesting devices, by virtue of its indirect-to-direct band gap tunability. However, obtaining large area thin films of MoS2 for future device applications still remains a challenge. In the present study, the amounts of the precursors （S and MOO3） were varied systematically in order to optimize the growth of highly crystalline and large area MoS2 layers by the chemical vapor deposition method. Careful control of the amounts of precursors was found to the key factor in the synthesis of large area highly crystalline flakes. The thickness of the layers was confirmed by Raman spectroscopy and atomic force microscopy. The optical properties and chemical composition were studied by photoluminescence （PL） and X-ray photoelectron spectroscopy. The emergence of strong direct excitonic emissions at 1.82 eV （A-exciton, with a normalized PL intensity of -55 × 10^3） and 1.98 eV （B-exciton, with a normalized PL intensity of -5 × 10^3） of the sample at room temperature clearly indicates the high luminescence quantum efficiency. The mobility of the films was found to be 0.09 cm^2/（V.s） at room temperature. This study provides a method for the controlled synthesis of high-quality two-dimensional （2D） transition metal dichalcogenide materials, useful for applications in nanodevices, optoelectronics and solar energv conversion.     

Analysis of Physiological Responses and Use of Fuzzy Information Granulation–Based Neural Network for Recognition of Three Emotions

In this study, we investigate the relationship between emotions and the physiological responses, with emotion recognition, using the proposed fuzzy information granulation–based neural network (FIGNN) for boredom, pain, and surprise emotions. For an analysis of the physiological responses, three emotions are induced through emotional stimuli, and the physiological signals are obtained from the evoked emotions. To recognize the emotions, we design an FIGNN recognizer and deal with the feature selection through an analysis of the physiological signals. The proposed method is accomplished in premise, consequence, and aggregation design phases. The premise phase takes information granulation using fuzzy c‐means clustering, the consequence phase adopts a polynomial function, and the aggregation phase resorts to a general fuzzy inference. Experiments show that a suitable methodology and a substantial reduction of the feature space can be accomplished, and that the proposed FIGNN has a high recognition accuracy for the three emotions using physiological signals.     

Interconnection Technology Based on InSn Solder for Flexible Display Applications

A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than 150°C. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than 150°C. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip‐chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a 20 μm pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at 130°C.     

HV‐SoP Technology for Maskless Fine‐Pitch Bumping Process

Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip‐chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine‐pitch solder bumping has been widely studied. In this study, high‐volume solder‐on‐pad (HV‐SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are 28.3 μm, 31.7 μm, and 26.3 μm, respectively. It is expected that the HV‐SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine‐pitch flip‐chip bonding.     

Modeling and Simulation of New Encoding Schemes for High‐Speed UHF RFID Communication

In this paper, we present novel high‐speed transmission schemes for high‐speed ultra‐high frequency (UHF) radio‐frequency identification communication. For high‐speed communication, tags communicate with a reader using a high‐speed Miller (HS‐Miller) encoding and multiple antennas, and a reader communicates with tags using extended pulse‐interval encoding (E‐PIE). E‐PIE can provide up to a two‐fold faster data rate than conventional pulse‐interval encoding. Using HS‐Miller encoding and orthogonal multiplexing techniques, tags can achieve a two‐ to three‐fold faster data rate than Miller encoding without degrading the demodulation performance at a reader. To verify the proposed transmission scheme, the MATLAB/Simulink model for high‐speed backscatter based on an HS‐Miller modulated subcarrier has been designed and simulated. The simulation results show that the proposed transmission scheme can achieve more than a 3 dB higher BER performance in comparison to a Miller modulated subcarrier.     

Mobile Small Cells for Further Enhanced 5G Heterogeneous Networks

A heterogeneous network (HetNet) is a network topology composed by deploying multiple HetNets under the coverage of macro cells (MCs). It can improve network throughput, extend cell coverage, and offload network traffic; for example, the network traffic of a 5G mobile communications network. A HetNet involves a mix of radio technologies and various cell types working together seamlessly. In a HetNet, coordination between MCs and small cells (SCs) has a positive impact on the performance of the networks contained within, and consequently on the overall user experience. Therefore, to improve user‐perceived service quality, HetNets require high‐efficiency network protocols and enhanced radio technologies. In this paper, we introduce a 5G HetNet comprised of MCs and both fixed and mobile SCs (mSCs). The featured mSCs can be mounted on a car, bus, or train and have different characteristics to fixed SCs (fSCs). In this paper, we address the technical challenges related to mSCs. In addition, we analyze the network performance under two HetNet scenarios — MCs and fSCs, and MCs and mSCs.     

Miniaturized Flexible Electronic Systems with Wireless Power and Near‐Field Communication Capabilities

A class of thin, lightweight, flexible, near‐field communication (NFC) devices with ultraminiaturized format is introduced, and systematic investigations of the mechanics, radio frequency characteristics, and materials aspects associated with their optimized construction are presented. These systems allow advantages in mechanical strength, placement versatility, and minimized interfacial stresses compared to other NFC technologies and wearable electronics. Detailed experimental studies and theoretical modeling of the mechanical and electromagnetic properties of these systems establish understanding of the key design considerations. These concepts can apply to many other types of wireless communication systems including biosensors and electronic implants.     

Low‐Temperature Processable High‐Performance Electrochemically Deposited p‐Type Cuprous Oxides Achieved by Incorporating a Small Amount of Antimony

The development of an electrochemically robust method for the low‐temperature deposition of cuprous oxide (Cu₂O) thin films with reliable and conductive p‐type characteristics could yield breakthroughs in earth abundant and ecofriendly all oxide‐based photoelectronic devices. The incorporation of the group‐V element antimony (Sb) in the solution‐based electrodeposition process has been investigated. A small amount of Sb (1.2 at%) in the Cu₂O resulted in rapid nucleation and coalescence at the initial stage of electrochemical reaction, and finally made the surface morphology smooth in 2D. The growth behavior changed due to Sb addition and produced a strong diffraction intensity, single‐domain‐like diffraction patterns, and low angle tilt boundaries in the Cu₂O:Sb film, implying extremely improved crystallinity. As a result, these films exhibited extraordinary optical transmittance and band‐to‐band photoluminescence emission as well as higher electrical conductivity. The Cu/Cu₂O:Sb Schottky diode showed good rectifying characteristics and more sensible photoresponsibility.     

Self‐Powered,Room‐Temperature Electronic Nose Based on Triboelectrification and Heterogeneous Catalytic Reaction

Herein, a self‐powered electronic nose strategy with highly selective gas detection is described. The electronic nose is a two‐dimensional microarray based on the triboelectrification between ZnO nanowires and the dielectric layers, and the heterogeneous catalytic reaction occurring on the nanowires and on the NiO nanoparticles. These electronic noses show the ability to distinguish between four volatile organic compound (VOC) gases (methanol, ethanol, acetone, and toluene) with a detection limit of 0.1% at room temperature using no external power source.