收费全文 | 933篇 |
免费 | 19篇 |
国内免费 | 2篇 |
电工技术 | 28篇 |
综合类 | 3篇 |
化学工业 | 236篇 |
金属工艺 | 13篇 |
机械仪表 | 44篇 |
建筑科学 | 12篇 |
矿业工程 | 1篇 |
能源动力 | 45篇 |
轻工业 | 81篇 |
水利工程 | 6篇 |
石油天然气 | 1篇 |
无线电 | 86篇 |
一般工业技术 | 198篇 |
冶金工业 | 54篇 |
原子能技术 | 5篇 |
自动化技术 | 141篇 |
2024年 | 21篇 |
2023年 | 25篇 |
2022年 | 40篇 |
2021年 | 35篇 |
2020年 | 40篇 |
2019年 | 31篇 |
2018年 | 42篇 |
2017年 | 52篇 |
2016年 | 54篇 |
2015年 | 37篇 |
2014年 | 47篇 |
2013年 | 74篇 |
2012年 | 45篇 |
2011年 | 65篇 |
2010年 | 26篇 |
2009年 | 37篇 |
2008年 | 31篇 |
2007年 | 30篇 |
2006年 | 12篇 |
2005年 | 13篇 |
2004年 | 12篇 |
2003年 | 19篇 |
2002年 | 8篇 |
2001年 | 13篇 |
2000年 | 11篇 |
1999年 | 7篇 |
1998年 | 17篇 |
1997年 | 12篇 |
1996年 | 7篇 |
1995年 | 4篇 |
1994年 | 10篇 |
1993年 | 9篇 |
1992年 | 9篇 |
1991年 | 12篇 |
1990年 | 3篇 |
1989年 | 4篇 |
1988年 | 3篇 |
1987年 | 7篇 |
1986年 | 4篇 |
1985年 | 2篇 |
1984年 | 2篇 |
1983年 | 1篇 |
1982年 | 6篇 |
1981年 | 4篇 |
1980年 | 4篇 |
1979年 | 2篇 |
1977年 | 1篇 |
1975年 | 1篇 |
1970年 | 1篇 |
1953年 | 1篇 |
Micro-drilling using lasers finds widespread industrial applications in aerospace, automobile, and bio-medical sectors for obtaining holes of precise geometric quality with crack-free surfaces. In order to achieve holes of desired quality on hard-to-machine materials in an economical manner, computational intelligence approaches are being used for accurate prediction of performance measures in drilling process. In the present study, pulsed millisecond Nd:YAG laser is used for micro drilling of titanium alloy and stainless steel under identical machining conditions by varying the process parameters such as current, pulse width, pulse frequency, and gas pressure at different levels. Artificial intelligence techniques such as adaptive neuro-fuzzy inference system (ANFIS) and multi gene genetic programming (MGGP) are used to predict the performance measures, e.g. circularity at entry and exit, heat affected zone, spatter area and taper. Seventy percent of the experimental data constitutes the training set whereas remaining thirty percent data is used as testing set. The results indicate that root mean square error (RMSE) for testing data set lies in the range of 8.17–24.17% and 4.04–18.34% for ANFIS model MGGP model, respectively, when drilling is carried out on titanium alloy work piece. Similarly, RMSE for testing data set lies in the range of 13.08–20.45% and 6.35–10.74% for ANFIS and MGGP model, respectively, for stainless steel work piece. Comparative analysis of both ANFIS and MGGP models suggests that MGGP predicts the performance measures in a superior manner in laser drilling operation and can be potentially applied for accurate prediction of machining output.
相似文献In this work, the performance of rapid prototyping (RP) based rapid tool is investigated during electrical discharge machining (EDM) of titanium as work piece using EDM 30 oil as dielectric medium. Selective laser sintering, a RP technique, is used to produce the tool electrode made of AlSi10Mg. The performance of rapid tool is compared with conventional solid copper and graphite tool electrodes. The machining performance measures considered in this study are material removal rate, tool wear rate and surface integrity of the machined surface measured in terms of average surface roughness (Ra), white layer thickness, surface crack density and micro-hardness on white layer. Since the machining process is a complex one, potentiality of application of a predictive tool such as least square support vector machine has been explored to provide guidelines for the practitioners to predict various machining performance measures before actual machining. The predictive model is said to be robust one as root mean square error in the range of 0.11–0.34 is obtained for various performance measures. A hybrid optimization technique known as desirability based grey relational analysis in combination with firefly algorithm is adopted for simultaneously optimizing the performance measures. It is observed that peak current and tool type are the significant parameters influencing all the performance measures.
相似文献This paper presents a mathematical modeling insight for the novel heterogate dielectric-dual material gate-GAA TFET (HD-DMG-GAA-TFET) and validating the results with TCAD simulation. By using the appropriate boundary conditions and continuity equations, the Poisson’s equation is solved to obtain the potential profile. The developed model is used to study the analog performance parameters such as subthreshold swing (SS), threshold voltage (Vth), transconductance (gm), drain conductance (gd), device efficiency (gm/Ids), intrinsic gain (gm/gd), channel resistance (Rch) and output resistance (Ro). Further, to optimize the effect of metal work function on analog performance, three different combinations of DMG configurations has been studied. The results demonstrated that for a difference of 0.4 eV, the analog performance of the device is optimized. Low off current and high value of on current resulting into a higher ION/IOFF ratio has been obtained, which is appropriate for sub-nanometre devices and low standby power applications. The analytical results obtained from the proposed model shows good agreement with the simulated results obtained with the ATLAS device simulator.
相似文献In this work, the effect of gate metal work function engineering (GME), gate bias and drain bias on the bias dependent parasitic capacitances has been studied. Further, RF Figure of merits (FOMs) such as power gains, cut-off frequency (f T), maximum oscillation frequency (f Max) and intrinsic delay of hetero-dielectric gate-metal-engineered gate-all-around tunnel FET (HD-GME-GAA-TFET) are studied and compared with HD-GAA-TFET. Simulation results show an appreciable improvement in RF FOMs with the application of GME architecture on GAA TFET. Further, it has been observed that GME exhibits 3.76 times enhancement and 0.017 times reduction in cut-off frequency and intrinsic delay respectively as we increase the work function difference, which makes it a promising candidate for low power switching applications. Moreover, the small signal Y-parameters have also been studied which indicates that HD-GME-GAA-TFET is a promising candidate for RF/microwave applications. All the simulations have been done using ATLAS device simulator.
相似文献